MMDTA123YE PNP Silicon Epitaxial Planar Digital Transistor Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Collector (Output) Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit -VCEO 50 V Input Voltage VI - 12 to + 5 V Collector Current -IC 100 mA Total Power Dissipation Ptot 150 mW Tj 150 ℃ Tstg - 55 to + 150 ℃ Collector Emitter Voltage Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ Parameter Symbol Min. Typ. Max. Unit hFE 33 - - - Collector Base Cutoff Current at -VCB = 50 V -ICBO - - 0.5 µA Emitter Base Cutoff Current at -VEB = 5 V -IEBO - - 3.8 mA -VCE(sat) - - 0.3 V Input off Voltage at -VCE = 5 V, -IC = 100 µA -VI(off) 0.3 - - V Input on Voltage at -VCE = 0.3 V, -IC = 20 mA -VI(on) - - 3 V Transition Frequency at -VCE = 10 V, IE = 5 mA, f = 100 MHz fT - 250 - MHz Input Resistance R1 1.54 2.2 2.86 KΩ Resistance Ratio R 2 / R1 3.6 4.5 5.5 - DC Current Gain at -VCE = 5 V, -IC = 10 mA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 23/01/2013 Rev: 01 MMDTA123YE SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 23/01/2013 Rev: 01