TNP3025A/B

SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
Email:[email protected]
Tel:+86-21-64605419
Fax:+86-21-64606443
TNP3025A/B
Overvoltage and Surge Protection Devices
Features
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





SMA or SMB Package
Bi-directional Configurations
Excellent clamping capability.
Passivated planar junction technology.
Typical IR less than 2uA.
Plastic material has UL flammability classification 94V-O
RoHS compliant in lead-free versions
Applications



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Power Line Communication interface
T1/E1 Trunk & Line Card
RS-485/RS-232/RS-422
Video/audio line
Maximum Ratings And Characteristics @ 25°C Ambient Temperature (unless otherwise noted)
Parameter
Symbol
Value
Units
VPP1
4
KV
VPP1
6
KV
Lead Soldering Temperature
TL
260(10sec)
°C
Storage Temperature Range
TSTG
-55 to 150
°C
TJ
-55 to 150
°C
No-repetitive peak pulse voltage @TL = 25°C (10/700us)
TNP3025A
No-repetitive peak pulse voltage @TL = 25°C (10/700us)
TNP3025B
Operating Junction Temperature Range
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TNP3025A/B
Electrical Specification @ Tamb 25°C
Symbol
Value
Parameter
Min.
VRWM
Typ.
V
25
25
V
Breakdown Voltage;(IBR=1mA)
TNP3025A
TNP3025B
V(BO)
IR
VT
28
28
V
Breakdown Voltage;(I(BO)=800mA)
TNP3025A
TNP3025B
40
40
TNP3025A
TNP3025B
2
2
uA
Off-state Current
V
On-state Voltage:IT=2.2A, tw=100us
4
4
TNP3025A
TNP3025B
PF
Off-state Capacitance:f=1.0MHz Vd=1.0Vrms,VD= -2V
Coff
Max.
Repetitive Peak off-state Voltage
TNP3025A
TNP3025B
VBR
Unit
TNP3025A
TNP3025B
Fig1. Electrical characteristics
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25
35
TNP3025A/B
Fig2. Pulse Waveform (tr=10us
tp=700us)
Package Outline Dimensions and Pad Layouts
SMA (DO-214AC)
Dim
Millimeters
SMB (DO-214AA)
Inches
Dim
Millimeters
Inches
Min
Max
Min
Max
A
4.06
4.57
0.160
0.180
0.115
B
3.30
3.94
0.130
0.155
0.049
0.065
C
1.95
2.20
0.077
0.086
0.405
0.006
0.016
D
0.13
0.31
0.006
0.012
4.83
5.59
0.190
0.220
E
5.08
5.59
0.200
0.220
F
----
0.203
----
0.008
F
----
0.20
----
0.008
G
1.91
2.41
0.075
0.095
G
1.95
2.62
0.077
0.103
H
0.76
1.52
0.030
0.060
H
0.76
1.52
0.030
0.060
Min
Max
Min
Max
A
3.99
4.57
0.157
0.180
B
2.29
2.92
0.09
C
1.25
1.65
D
0.152
E
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