NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 8A General Description Features • High voltage, high speed power switching • VCBO = 700V • Suitable for switching regulator, inverters motor controls • VCEO = 400V • VBEO = 9V • IC = 8A TO-220 TO-220F 3 3 2 2 1 1 Ordering Information Pin Assignment Ordering number Package Packing 1 2 3 KSH13007A TO-220 B C E Tube KSH13007AF TO-220F B C E Tube hFE Classification Classification R O Y hFE 15 ~ 28 26 ~ 39 37 ~ 50 * Test Condition : VCE=5V,IC=2A క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13007A Series KSH13007A KSH13007AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 8A Absolute Maximum Ratings TC=25 unless otherwise noted RATING CHARACTERISTICS SYMBOL UNIT TO-220 TO-220F Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current(DC) IC 8 A Collector Current(Pulse) ICP 16 A Base Current IB 4 A Collector Dissipation(Tc=25) PC Junction Temperature TJ 150 Storage Temperature TSTG -65~150 Electrical Characteristics (1) CHARACTERISTICS 80 40 W TC=25 unless otherwise noted SYMBOL Test Condition Min Typ. Max Unit Collector-Base Breakdown Voltage VCBO IC=500ȝA, IE=0 700 V Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 400 V Emitter Cut-off Current IEBO VEB=9V,IC=0 DC Current Gain hFE1 hFE2 VCE=5V,IC=2A VCE=5V,IC=5A Collector-Emitter Saturation Voltage VCE(sat) IC=2A,IB=0.4A IC=5A,IB=1A IC=8A,IB=2A 1 2 3 V V V Base-Emitter Saturation Voltage VBE(sat) IC=2A,IB=0.4A IC=5A,IB=1A 1.2 1.6 V V Output Capacitance Cob 1 8 5 VCB=10V, f=0.1MHz Current Gain Bandwidth Product fT VCE=10V,IC=0.5A Turn on Time ton Storage Time tstg Fall Time tF Vcc=125V, Ic=5A IB1=1A, IB2= -1A RL=25ȍ (Note 2) ᒻ 50 30 ᓂ 80 ᓊ 4 1.6 ᓪ 3.0 ᓪ 0.7 ᓪ Notes ; 1. Pulse Test: Pulse WidthȝV'XW\&\FOH 2. Final Test Condition : UI9600, Vcc=5V, Ic=0.5A ( tstg Class = A : 3.0~3.5, B : 3.5~4.0, C : 4.0~4.5 ) క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13007A Series KSH13007A KSH13007AF KSX13007A Series hFE, DC CURRENT GAIN [A] VBE(SAT), VCE(SAT), SATURATION VOLTAGE [V] Typical Characteristics IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage tR, tD, TURN ON TIME [uS] Cob, CAPACITANCE [pF] Figure 1. DC Current Gain VCB, COLLECTOR-BASE VOLTAGE [V] IC, COLLECTOR CURRENT [A] Figure 3. Collector Output Capacitance tSTG, tF TURN OFF TIME [uS] IC, COLLECTOR CURRENT [A] Figure 4. Turn On Time IC, COLLECTOR CURRENT [A] Figure 5. Turn Off Time VCE, COLLECTOR-EMITTER VOLTAGE [V] Figure 6. Safe Operating Area క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13007A Series IC[A], COLLECTOR CURRENT PC, COLLECTOR POWER DISSIPATION[W] Typical Characteristics VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Biased Safe Operating Area 90 80 70 60 TO-220 50 40 30 TO-220F 20 10 0 0 25 50 75 100 125 150 175 Tc, CASE TEMPERATURE [] Figure 8. Power Derating క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13007A Series Package Dimension {vTYYWGOhPG 0 4.50±0.20 1.30±0.20 6.50±0.20 ij .2 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 ±0 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 9.90±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13007A Series Package Dimension {vTYYWGOiPG ±0.20 0 .2 ±0 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 ij 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 Dimensions in Millimeters క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13007A Series Package Dimension {vTYYWmG ±0.20 ±0.20 2.54±0.20 0.70±0.20 6.68±0.20 0. 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 ± ij 20 0.80±0.20 0.50±0.20 2.54typ 2.54typ Dimensions in Millimeters క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡