KSD13003E KSU13003E

KSD13003E/KSU13003E
KSD13003E
KSU13003E
◎ SEMIHOW REV.A0,July 2011
KSD13003E/KSU13003E
KSD13003E/KSU13003E
High Voltage Switch Mode Application
• High Voltage, High Speed Switching
• Suitable for Switching regulator, Inverters motor controls
• 150℃ Max. Operating temperature
• 8KV ESD proof at HBM (C=100㎊, R=1.5㏀)
Absolute Maximum Ratings
CHARACTERISTICS
SYMBOL
RATING
UNIT
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TSTG
TJ
700
400
9
1.5
3
0.75
25
-65~150
150
V
V
V
A
A
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Storage Temperature
Max. Operating Junction Temperature
Electrical Characteristics
1.5 Amperes
NPN Silicon Power Transistor
25 Watts
TC=25℃ unless otherwise noted
TO-252 / TO-251
1. Base
2. Collector
3. Emitter
D-PAK
I-PAK
2
1
1
2
3
3
KSD13003E KSU13003E
TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Typ.
Max
Unit
Collector-Base Breakdown Voltage
VCBO
IC=500μA, IE=0
700
V
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA, IB=0
400
V
Emitter Cut-off Current
IEBO
VEB=9V,IC=0
*DC Current Gain
hFE1
hFE2
VCE=10V,IC=400mA
VCE=10V,IC=1.5A
10
9
3
㎂
38
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
IC=1.5A,IB=0.5A
0.5
1.0
3.0
V
V
V
*Base-Emitter Saturation Voltage
VBE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
1.0
1.2
V
V
Cob
VCB=10V, f=0.1MHz
Current Gain Bandwidth Product
fT
VCE=10V,IC=0.1A
Turn on Time
ton
Storage Time
tstg
Fall Time
tF
Output Capacitance
㎊
21
㎒
4
Vcc=125V, Ic=2A
IB1=0.2A, IB2= -0.2A
RL=125Ω
1.1
㎲
4.0
㎲
0.7
㎲
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
hFE1
Classification
Package Mark information.
R
15 ~ 25
O
20 ~ 30
Y
25 ~ 35
S
E
13003
YWW Z
S
YWW
Z
SemiHow Symbol
Y; year code, WW; week code
hFE1 Classification
◎ SEMIHOW REV.A0,July 2011
KSD13003E/KSU13003E
hFE, DC CURRENT GAIN [A]
VBE(SAT), VCE(SAT), SATURATION VOLTAGE [V]
Typical Characteristics
IC, COLLECTOR CURRENT [A]
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Cob, CAPACITANCE [pF]
PC, COLLECTOR POWER DISSIPATION [W]
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT [A]
VCB, COLLECTOR-BASE VOLTAGE [V]
Figure 3. Forward Biased
Safe Operating Area
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
Tc, CASE TEMPERATURE [℃]
Figure 4. Power Derating
◎ SEMIHOW REV.A0,July 2011
KSD13003E/KSU13003E
Package Dimension
TO-252
2.3±0.1
6.6±0.2
1.2±0.3
9.7+0.5
-0.3
2.7±0.3
0.5±0.05
5.6±0.2
1±0.2
5.35±0.15
1.2±0.3
0.05+0.1
-0.05
0.8±0.2
0.6±0.2
0.5+0.1
-0.05
2.3typ
2.3typ
◎ SEMIHOW REV.A0,July 2011
KSD13003E/KSU13003E
Package Dimension
TO-251
2.3±0.1
6.6±0.2
5.35±0.15
0.75±0.15
0.8±0.15
0.6±0.1
2.3typ
7±0.2
7.8
±0.3
7.5±0.4
5.6±0.2
0.5±0.05
0.5+0.1
-0.05
1.2±0.3
2.3typ
◎ SEMIHOW REV.A0,July 2011