BVDSS = 650 V RDS(on) typ = 2.3 ȍ HFD5N65U / HFU5N65U ID = 3.6 A 650V N-Channel MOSFET D-PAK FEATURES I-PAK 2 Originative New Design 1 1 2 3 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 3 HFD5N65U HFU5N65U 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.3 ȍ7\S#9GS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25 unless otherwise specified Parameter Drain-Source Voltage Value Units 650 V Drain Current – Continuous (TC = 25) 3.6 A Drain Current – Continuous (TC = 100) 2.3 A IDM Drain Current – Pulsed 14.4 A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 163 mJ IAR Avalanche Current (Note 1) 3.6 A EAR Repetitive Avalanche Energy (Note 1) 8.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (TA = 25)* 2.5 W PD Power Dissipation (TC = 25) - Derate above 25 80 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.64 W/ -55 to +150 300 Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 1.59 RșJA Junction-to-Ambient* -- 50 RșJA Junction-to-Ambient -- 110 Units /W * When mounted on the minimum pad size recommended (PCB Mount) క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD5N65U_HFU5N65U June 2015 Device Marking Week Marking Package Packing Quantity RoHS Status HFD5N65U YWWX TO-252 Reel 2,500 Pb Free HFD5N65U YWWXg TO-252 Reel 2,500 Halogen Free HFU5N65U YWWX TO-251 Tube 80 Pb Free HFU5N65U YWWXg TO-251 Tube 80 Halogen Free Electrical Characteristics TC=25 qC Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 1.8 A -- 2.3 2.9 VGS = 0 V, ID = 250 Ꮃ 650 -- -- V -- 0.6 -- V/ Off Characteristics BVDSS Drain-Source Breakdown Voltage ǻBVDSS Breakdown Voltage Temperature /ǻTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current ID = 250 Ꮃ, Referenced to 25 VDS = 650 V, VGS = 0 V -- -- 1 Ꮃ VDS = 520 V, TC = 125 -- -- 10 Ꮃ VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ -- 600 780 Ꮔ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 60 78 Ꮔ -- 7.7 10 Ꮔ -- 22 44 Ꭸ Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 325 V, ID = 4.5 A, RG = 25 (Note 4,5) VDS = 520 V, ID = 4.5 A, VGS = 10 V (Note 4,5) Gate-Drain Charge -- 40 80 Ꭸ -- 45 90 Ꭸ -- 35 70 Ꭸ -- 10.5 13.5 nC -- 3.5 -- nC -- 3 -- nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 3.6 ISM Pulsed Source-Drain Diode Forward Current -- -- 14.4 VSD Source-Drain Diode Forward Voltage IS = 3.6 A, VGS = 0 V -- -- 1.4 V IS = 4.5 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 243 -- Ꭸ -- 1.5 -- ȝ& trr Reverse Recovery Time Qrr Reverse Recovery Charge A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.8mH, IAS=4.5A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$, di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH 5. Essentially Independent of Operating Temperature క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD5N65U_HFU5N65U Package Marking and Odering Information HFD5N65U_HFU5N65U Typical Characteristics 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 ID, Drain Current [A] ID, Drain Current [A] Top : 25oC 150oC -25oC * Notes : 1. 300us Pulse Test 2. TC = 25oC * Notes : 1. VDS= 30V 2. 300us Pulse Test 10-1 0.1 2 VDS, Drain-Source Voltage [V] 4 6 8 10 VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 5 IDR, Reverse Drain Current [A] RDS(ON) [:], Drain-Source On-Resistance 6 VGS = 10V 4 3 VGS = 20V 2 1 10 1 150oC 25oC * Notes : 1. VGS= 0V 2. 300us Pulse Test Note : TJ = 25oC 0 0 2 4 6 8 10 0.1 0.0 0.6 0.8 1.0 1.2 Ciss 600 Coss 400 * Note ; 1. VGS = 0 V 2. f = 1 MHz 200 Crss 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 Capacitances [pF] 0.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1000 0.2 VSD, Source-Drain Voltage [V] ID, Drain Current [A] VDS = 130V VDS = 325V 10 VDS = 520V 8 6 4 2 Note : ID = 4.5A 0 10-1 100 101 0 0 3 6 9 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡ (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HFD5N65U_HFU5N65U Typical Characteristics 1.1 1.0 0.9 Note : 1. VGS = 0 V 2. ID = 250PA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note : 1. VGS = 10 V 2. ID = 1.8 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 4 Operation in This Area is Limited by R DS(on) 10 Ps 100 Ps ID, Drain Current [A] 3 1 ms 10 ms 100 ms 100 DC * Notes : 1. TC = 25 oC 2 1 o 2. TJ = 150 C 3. Single Pulse -1 10 100 101 102 0 25 103 50 75 Figure 9. Maximum Safe Operating Area 100 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZTJC(t), Thermal Response ID, Drain Current [A] 101 Figure 10. Maximum Drain Current vs Case Temperature D=0.5 * Notes : 1. ZTJC(t) = 1.59 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.2 0.1 0.05 10-1 0.02 PDM 0.01 single pulse 10-2 10-5 10-4 t1 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD5N65U_HFU5N65U Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD5N65U_HFU5N65U Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD5N65U_HFU5N65U Package Dimension {vTY\YhG క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD5N65U_HFU5N65U Package Dimension {vTY\XhG క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡