HFP4N60F - SemiHow

BVDSS = 600 V
RDS(on) typ ȍ
HFP4N60F
ID = 4 A
600V N-Channel MOSFET
TO-220
FEATURES
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 8.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 2.6 ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
600
V
Drain Current
– Continuous (TC = 25୅)
4.0
A
Drain Current
– Continuous (TC = 100୅)
2.5
A
IDM
Drain Current
– Pulsed
16
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
70
mJ
IAR
Avalanche Current
(Note 1)
4
A
EAR
Repetitive Avalanche Energy
(Note 1)
11
mJ
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
110
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
ID
(Note 1)
0.88
W/୅
-55 to +150
୅
300
୅
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșCS
Case-to-Sink
RșJA
Junction-to-Ambient
Typ.
Max.
--
1.15
0.5
--
--
62.5
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡
HFP4N60F
July 2015
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
2.0
--
4.0
V
--
2.6
3.2
Ÿ
VGS = 0 V, ID = 250 Ꮃ
600
--
--
V
VDS = 600 V, VGS = 0 V
--
--
10
Ꮃ
VDS = 480 V, TC = 125୅
--
--
100
Ꮃ
VGS = ρ30 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
380
500
Ꮔ
--
45
60
Ꮔ
--
6.5
8.5
Ꮔ
--
19
48
Ꭸ
--
19
48
Ꭸ
--
35
80
Ꭸ
--
22
54
Ꭸ
--
8.5
11
nC
--
2.1
--
nC
--
2.8
--
nC
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 4 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480 V, ID = 4 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
4
ISM
Pulsed Source-Drain Diode Forward Current
--
--
16
VSD
Source-Drain Diode Forward Voltage
IS = 4 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
240
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 4 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
1.4
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, IAS=4A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡
HFP4N60F
Electrical Characteristics TJ=25 qC
HFP4N60F
Typical Characteristics
10
VGS
Top :
10.0 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
Bottom : 4.0 V
ID, Drain Current [A]
ID, Drain Current [A]
101
0
10
25oC
1
150oC
-25oC
* Notes :
1. 300us Pulse Test
2. TC = 25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
10-1
100
101
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
8
IDR, Reverse Drain Current [A]
RDS(ON)[:],
Drain-Source On-Resistance
10
6
VGS = 10V
4
2
VGS = 20V
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
* Note : TJ = 25oC
0
0
1
2
3
4
5
6
7
0.1
0.2
8
0.4
0.6
ID, Drain Current[A]
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1.2
1.4
400
Coss
300
* Note ;
1. VGS = 0 V
2. f = 1 MHz
200
Crss
100
12
VGS, Gate-Source Voltage [V]
Capacitances [pF]
500
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
600
0.8
VSD, Source-Drain Voltage [V]
10
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 4.0A
0
10-1
0
100
101
0
2
4
6
8
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡
(continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFP4N60F
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 2 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
4
Operation in This Area
is Limited by R DS(on)
100 Ps
3
ID, Drain Current [A]
1 ms
10 ms
100 ms
100
DC
10-1
* Notes :
1. TC = 25 oC
2
1
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
ZTJC(t), Thermal Response
ID, Drain Current [A]
101
D=0.5
* Notes :
1. ZTJC(t) = 1.15 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
10-1
0.1
0.05
PDM
0.02
0.01
single pulse
t1
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡
HFP4N60F
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡
HFP4N60F
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
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HFP4N60F
Package Dimension
{vTYYWG
20
4.50±0.20
1.30±0.20
6.50±0.20
0.
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
±
ij
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
9.90±0.20
0.80±0.20
2.54typ
2.54typ
0.50±0.20
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