HFS4N60

BVDSS = 600 V
RDS(on) typ ȍ
HFS4N60
ID = 4.0 A
600V N-Channel MOSFET
TO-220F
FEATURES
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 15 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
600
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ଇ)
4.0*
A
Drain Current
– Continuous (TC = 100ଇ)
2.5*
A
IDM
Drain Current
– Pulsed
16*
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
240
mJ
IAR
Avalanche Current
(Note 1)
4.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
33
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
0.26
W/ଇ
-55 to +150
ଇ
300
ଇ
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
3.79
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFS4N60
July 2005
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.0 A
--
2.0
2.5
‫ש‬
VGS = 0 V, ID = 250 Ꮃ
600
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
--
0.65
--
·͠ఁ
VDS = 600 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 480 V, TC = 125ఁ
--
--
10
Ꮃ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ
--
600
780
Ꮔ
--
65
85
Ꮔ
--
11
14
Ꮔ
--
15
30
Ꭸ
--
40
80
Ꭸ
--
50
100
Ꭸ
--
40
80
Ꭸ
--
15
20
Οʹ
--
3.4
--
Οʹ
--
6.7
--
Οʹ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 4.0 A,
RG = 25 ‫ש‬
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 480V, ID = 4.0 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
4.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
16
VSD
Source-Drain Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
300
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 4.0 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
2.2
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=27.5mH, IAS=4.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFS4N60
Electrical Characteristics TC=25 qC
HFS4N60
Typical Characteristics
V
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottem
5.0V
Top:
101
ID, Drain Current [A]
ID, Drain Current [A]
101
100
10-1
150୅
100
25୅
-55୅
୔ Note :
1. 250Ꭹ Pulse Test
2. TC=25୅
10-1
100
10-1
101
2
4
VDS, Drain-Source Voltage [V]
୔ Note :
1. VDS=40V
2. 250Ꭹ Pulse Test
6
8
10
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
12
101
IDR, Reverse Drain Current [A]
RDS(ON)[Ÿ@
Drain-Source On-Resistance
10
VGS=10V
8
VGS=20V
6
4
100
150୅
25୅
୔ Note :
1. VGS=0V
2. 250Ꭹ Pulse Test
2
୔ Note : TJ=25୅
0
0
2
4
6
8
10
10-1
0.2
12
0.4
0.6
Capacitances [pF]
Ciss
800
600
Coss
400
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
1.2
1.4
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1200
0.8
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
VDS = 120V
10
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 4A
0
10-1
100
101
0
0
2
4
6
8
10
12
14
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
16
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
(continued)
1.2
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFS4N60
Typical Characteristics
1.1
1.0
୔ Note :
1. VGS=0V
2. ID=250Ꮃ
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Note :
1. VGS = 10 V
2. ID = 2.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
4
Operation in This Area
is Limited by R DS(on)
1 ms
10 ms
100 ms
DC
100
10-1
3
2
1
* Notes :
1. TC = 25 oC
o
10-2
100
2. TJ = 150 C
3. Single Pulse
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [ 䉝㼉
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
Zș -&(t), Thermal Response
ID, Drain Current [A]
ID, Drain Current [A]
100 Ps
101
0
10
0.2
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. Zș -&(t) = 3.79 䉝㻛㼃 㻌㻹㼍㼤㻚
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zș -&(t)
0.1
0.05
-1
10
0.02
PDM
0.01
t1
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
t2
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFS4N60
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
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HFS4N60
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFS4N60
Package Dimension
{vTYYWm
±0.20
±0.20
2.54±0.20
6.68±0.20
0.70±0.20
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
0
0.2
0.80±0.20
0.50±0.20
2.54typ
2.54typ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡