HFS10N65S

BVDSS = 650 V
RDS(on) typ ȍ
HFS10N65S
ID = 9.5 A
650V N-Channel MOSFET
TO-220F
FEATURES
ƒ Originative New Design
1
ƒ Superior Avalanche Rugged Technology
ƒ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
ƒ Very Low Intrinsic Capacitances
ƒ Excellent Switching Characteristics
ƒ Unrivalled Gate Charge : 29 nC (Typ.)
ƒ Extended Safe Operating Area
ƒ Lower RDS(ON) ȍ7\S#9GS=10V
ƒ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
650
9
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚͑
9.5*
$
Drain Current
– Continuous (TC = 100ఁ͚͑
5.7*
$
IDM
Drain Current
– Pulsed
38*
$
VGS
Gate-Source Voltage
ρ30
9
EAS
Single Pulsed Avalanche Energy
(Note 2)
700
P-
IAR
Avalanche Current
(Note 1)
9.2
$
EAR
Repetitive Avalanche Energy
(Note 1)
15.6
P-
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
9QV
PD
Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
50
:
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
0.4
:ഒ
-55 to +150
ഒ
300
ഒ
*Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
2.5
RșJA
Junction-to-Ambient
--
62.5
Units
ഒ:
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFS10N65S
March 2014
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ᒺ
2.0
--
4.0
9
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.75 A͑
--
0.8
0.98
വ
650
--
--
9
ID = 250 ᒺ, Referenced to 25୅
--
0.7
--
9ഒ
VDS = 650 V, VGS = 0 V͑
--
--
1
ᒺ
VDS = 520 V, TC = 125ఁ͑
--
--
10
ᒺ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 ᒺ
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
ᒹ
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
ᒹ
--
1450
1885
ᓂ
--
145
190
ᓂ
--
13
17
ᓂ
--
23
55
ᓩ
--
69
150
ᓩ
--
144
300
ᓩ
--
77
165
ᓩ
--
29
38
Q&
--
6.8
--
Q&
--
10.3
--
Q&
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 325 V, ID = 9.5 A,
RG = 25 വ͑
1RWH
VDS = 520V, ID = 9.5 A,
VGS = 10 V
1RWH
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
9.5
ISM
Pulsed Source-Drain Diode Forward Current
--
--
38
VSD
Source-Drain Diode Forward Voltage
IS = 9.5 A, VGS = 0 V
--
--
1.4
9
trr
Reverse Recovery Time
--
420
--
ᓩ
Qrr
Reverse Recovery Charge
IS = 9.5 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
4.2
--
˩&
$
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFS10N65S
Electrical Characteristics TC=25 qC
HFS10N65S
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
ID, Drain Current [A]
101
ID, Drain Current [A]
Top :
100
25oC
150oC
-55oC
* Notes :
1. 300us Pulse Test
2. TC = 25oC
10-1
10-1
* Notes :
1. VDS= 40V
2. 300us Pulse Test
0.1
100
2
101
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON)[:],
Drain-Source On-Resistance
2.0
VGS = 10V
1.5
1.0
VGS = 20V
0.5
10
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
* Note : TJ = 25oC
0.0
0
5
10
15
20
25
30
0.1
0.2
35
0.4
ID, Drain Current[A]
Capacitances [pF]
Ciss
2000
1500
Coss
Note ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
1.0
1.2
1.4
12
VDS = 130V
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
0.8
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
0.6
VSD, Source-Drain Voltage [V]
10
VDS = 325V
VDS = 520V
8
6
4
2
* Note : ID = 9.5A
0
10-1
0
100
101
0
4
8
12
16
20
24
28
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
32
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
(continued)
1.2
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFS10N65S
Typical Characteristics
1.1
1.0
* Note :
1. VGS = 0 V
2. ID = 250 PA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
Note :
1. VGS = 10 V
2. ID = 4.75 A
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
10
Operation in This Area
is Limited by R DS(on)
10 Ps
8
101
ID, Drain Current [A]
100 Ps
1 ms
10 ms
100 ms
100
DC
10-1
* Notes :
1. TC = 25 oC
6
4
2
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
0
25
103
50
75
Figure 9. Maximum Safe Operating Area
100
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0.2
* Notes :
1. ZTJC(t) = 2.5 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
10-1
100
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
ZTJC(t), Thermal Response
ID, Drain Current [A]
102
0.05
0.02
0.01
10-2
10-5
PDM
t1
single pulse
10-4
10-3
10-2
t2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFS10N65S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFS10N65S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFS10N65S
Package Dimension
{vTYYWmG
±0.20
±0.20
2.54±0.20
6.68±0.20
0.70±0.20
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
0
0.2
0.80±0.20
0.50±0.20
2.54typ
2.54typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡