1N5819-1/UR-1

1N5819-1 and 1N5819UR-1
Standard
HERMETIC AXIAL LEAD / MELF
SCHOTTKY BARRIER DIODE
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 193, REV. C.2
AVAILABLE AS
1N5819-1, 1N5819UR-1
JAN EQUIVALENT:
SJ5819-1/SJ5819UR-1*
SV5819-1/SV5819UR-1*
SX5819-1/SX5819UR-1*
SS5819-1/SS5819UR-1*
HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE.
o
MAXIMUM RATINGS
All ratings are at TA = 25 C unless otherwise specified.
RATING
CONDITIONS
MIN
TYP
MAX
UNIT
Peak Inverse Voltage
(PIV)

-
-
45
Vdc
Average DC Output
Current (Io)

-
-
1.0
Amps
Peak Single Cycle Surge
Current (Ifsm)
tp = 8.3 ms Single Half Cycle Sine
Wave, Superimposed On Rated Load
-
-
25
Amps(pk)
Thermal Resistance (JL)
Junction to Lead
d = 0.375”
-
-
70
C/W
Thermal Resistance (JEC)
Junction to Endcap
-
-
40
C/W
Junction Temperature (TJ)
-
-55
-
+125
C
Operating Temperature
(Top)
-
-55
-
+125
C
Storage Temp. (Tstg)
-
-55
-
+150
C
MIN
TYP
MAX
UNIT
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
CONDITIONS
Maximum Forward
Voltage (Vf)
IF = 1.0A (300 sec pulse, duty cycle
< 2%)
-
-
0.49
Volts
Maximum Instantaneous
Reverse Current At Rated
(PIV)
TA = 25 C
TA = 100 C
-
-
0.05
4.0
Amps
mAmps
Junction Capacitance (CJ)
VR = 5 Vdc
0.01  f  1MHz
Vsig = 15 mV p-p
-
-
70
pF
Notes: - All ratings are at TA = 25C unless otherwise specified.
- Maximum storage temperature range: -55C to +150C.
- Maximum operating temperature range: -55C to +125C (1N5819-1, 1N5819UR-1).
 Derate linearly at 4.5 V/C above TL or TEC = +100C (1N5819-1), where TEC is at L = .375 inch.
 Derate linearly at 14 mA/C above TL or TEC = +55C (1N5819-1), where TEC is at L = .375 inch.
*Sensitron space equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting
from wafer fabrication through assembly and testing using our internal specification.
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798  www.sensitron.com  [email protected]
1N5819-1
1N5819UR-1
SENSITRON
TECHNICAL DATA
DATA SHEET 193, REV. C.2
PACKAGE DIMENSIONS:
AXIAL
MELF
SCHOTTKY BARRIER
1N5819-1
PACKAGE DIMENSIONS - INCHES ( MILLIMETERS)
STYLE
G
L
B
D
.028/.034 .08/.107
.160/.205 1.00/1.30
DO-41
0.71/0.86 .203/.272 .406/.521 2.54/3.302
SCHOTTKY BARRIER
1N5819UR-1
PACKAGE DIMENSIONS - INCHES ( MILLIMETERS)
STYLE
A
B
C
D
.189/.205
.016/.022
0.001 Min
.094/.105
DO-213AB
.480/.521
0.41/0.56
0.03 Min
2.39/2.67
GRAPHS:
Typical Rev erse Characteristics
Typical Forw ard Characteristics
R
(mA)
10
Instantaneous Reverse Current - I
(A)
10 0
10 -1
150 °C
10 1
125 °C
100 °C
10 0
75 °C
10
-1
50 °C
10 -2
25 °C
10 -3
100 °C
0
10
20
30
40
Reverse Voltage - V R (V)
50
60
Typical Junction Capacitance
10 -2
(pF)
Instantaneous Forward Current - I
F
125 °C
2
50
Junction Capacitance - C
T
25 °C
10 -3
0.0
0.1
0.2
0.3
0.4
Forward Voltage Drop - V
0.5
F (V)
0.6
40
30
20
10
0
10
20
30
40
50
Reverse Voltage - V R (V)
60
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798  www.sensitron.com  [email protected]
1N5819-1
1N5819UR-1
SENSITRON
TECHNICAL DATA
DATA SHEET 193, REV. C.2
PART ORDERING INFORMATION
The following part numbers can be purchased in either axial or surface mount devices and screened and tested to the
military screening flow. The parts are marked in accordance with the testing performed, example:
Sensitron Screening Level
1N
SJ
SX
SV
SS
Part Number- Leaded Package
(example for 1N5819-1)
1N5819-1
SJ5819-1
SX5819-1
SV5819-1
SS5819-1
Part Number- Surface Mount Package
(example for 1N5819UR-1)
1N5819UR-1
SJ5819UR-1
SX5819UR-1
SV5819UR-1
SS5819UR-1
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
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6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
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exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798  www.sensitron.com  [email protected]