MURC105-MURC160 SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4853, Rev. B MURC105-MURC160 Ultrafast Silicon Die Applications: Switching Power Supply General Purpose Free-Wheeling Diodes Polarity Protection Diode Features: Glass-Passivated Epitaxial Construction. Low Reverse Leakage Current High Surge Current Capability Low Forward Voltage Drop Fast Reverse-Recovery Behavior Maximum Ratings: Characteristics Symbol Peak Inverse Voltage VRWM Average Rectified Forward Current(Square Wave Mounting Method #3 Per Note1) Max. Peak One Cycle NonRepetitive Surge Current 8.3 ms, half Sine pulse IF(AV) Operating Junction Temperature and Storage Temperature MURC 105 50 MURC 110 100 MURC 115 150 MURC 120 200 MURC 130 300 1.0 @ TA = 130C MURC 140 400 MURC 150 500 MURC 160 600 Unit V A 1.0 @ TA = 120C IFSM 35 A TJ, Tstg -65 to +175 C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol MURC 105 Max Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 A/s) (IF = 0.5 Amp, IR = 1.0 A, IREC=0.25A) MURC 115 MURC 120 MURC 130 MURC 140 MURC 150 MURC 160 VF (Note1) (IF = 1.0 Amp, TJ = 150 C) (IF = 1.0 Amp, TJ = 25 C) Max. Reverse Current (Note1) (Rated DC Voltage, TJ = 150 C) (Rated DC Voltage, TJ = 25 C) MURC 110 V 0.710 0.875 1.05 1.25 50 2.0 150 5.0 35 25 75 50 30 10 pF 25 50 nS A IR trr Max. Junction Capacitance CT @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) Max Forward Recovery Time Tfr (IF = 1.0 Amp, di/dt = 50 A/s, IREC to 1.0V) 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2% Unit nS ©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com [email protected] MURC105-MURC160 SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4853, Rev. B Dimensions in inches (mm) ANODE B A Top side metalization - Aluminum - 25 kÅ minimum. Bottom side metalization - Titanium 1.2 kÅ, Nickel 1.8 kÅ, Silver - 30 kÅ minimum Bottom side is cathode, top side is anode. See part ordering information for different options Anode C Cathode (1) 2 Die type Area (mil ) Si p-n die 34 x 34 (1) Dimension A Inch (millimeter) 0.034 (0.864) (1) Dimension B Inch (millimeter) 0.020 (0.508) (2) Dimension C Inch (millimeter) 0.009 (0.229) Tolerance is ± 0.003” (0.076 mm) (2) Tolerance is ± 0.001” (0.025 mm) ©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR MURC105-MURC160 Technical Data Data Sheet 4853, Rev. B MURC105, MURC110, MURC115, MURC120 ©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com [email protected] MURC105-MURC160 SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4853, Rev. B MURC130, MURC140, MURC150, MURC160 ©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR MURC105-MURC160 Technical Data Data Sheet 4853, Rev. B PART ORDERING INFORMATION Default part number is Al top, Ag bottom. Add the following suffix for these metal combinations: Suffix Top Bottom Part Number Al Ag MURC105 AG Al Au MURC105AG BB Ag Ag MURC105BB BG Ag Au MURC105BG GG Au Au MURC105GG GB Au Ag MURC105GB -R - Reverse polarity MURC105-R A = Ti (0.3 kA) / Al (25 kA) B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA) G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA) (TOP) / Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA) (BOTTOM) DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 http://www.sensitron.com [email protected]