1C5806 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 930, REV. C ULTRA FAST RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage DC Blocking Voltage Breakdown Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol VRWM VR VBR IF(AV) IFSM TJ Tstg Condition - Max. Units 150 V 1.0 35 A A - 40 -55 to +175 -55 to +175 mil °C °C Condition 1A, pulse, TJ = 25 °C 2.5A, pulse, TJ = 25 °C 1A, pulse, TJ = 100 °C VR = VRWM, pulse, TJ = 25 °C VR = VRWM, pulse, TJ = 100 °C IF = IR = 0.5A , IRM = 0.05A VR = 10V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.875 0.975 0.800 1.0 50 25 25 Units V V V µA µA ns pF @ 55°C 8.3 ms, sine pulse (1) Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Reverse Recovery Time Max. Junction Capacitance Symbol VF1 VF2 VF3 IR1 IR2 trr CT • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] • 1C5806 SENSITRON TECHNICAL DATA DATA SHEET 930, REV. C Mechanical Dimensions: In Inches (mm) Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum. Top side metalization: Al - 25 kÅ minimum ANODE 0.024 ± 0.003 (0.610 ± 0.076) 0.040 ± 0.003 (1.016 ± 0.076) Bottom side is cathode, top side is anode. Anode 0.009 ± 0.001 (0.229 ± 0.025) Cathode DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] •