SILICON RECTIFIER DIE

SENSITRON
SEMICONDUCTOR
SD120UF500X45
TECHNICAL DATA
DATA SHEET 884, REV. -
SILICON RECTIFIER DIE
ULTRAFAST RECOVERY
Electrical Characteristics
Parameter
Peak Inverse Voltage
Symbol
VRWM
Min.
400
Max.
-
Unit
Volts
Max. Average DC Output
Current
IO
-
15
Amps
Max. Forward Voltage Drop
@ 30A pulse
TA =
25°C
Reverse Current @ VRWM
TA = 25°C
TA = 150°C
Max. Reverse Recovery Time
VF
-
1.2
Volts
IR
-
Operating and Storage Temp.
Maximum Junction Temperature
μAmps
trr
-
10
1.0
45
TOP & TSTG
-55
+150
°C
TJMAX
-
175
°C
ns
Rectifier Die Outline
B
A
Bottom side metalization Ag - 30 kA
minimum.
Top side metalization Al = 25 kA or Ti.=
1.2kA, Ni = 1.8kA, Ag = 30kA.
C
Die Type
ULTRAFAST
RECOVERY
Nominal Size
(Inch)
.120
Bottom side is cathode, top side is
anode.
A
Inch (mm)
+/- .003 (.077)
.120 (3.05)
B
Inch (mm)
+/- .003 (.077)
.094 (2.38)
C
Inch (mm)
+/- .001 (.026)
.010 (0.254)
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SENSITRON
SEMICONDUCTOR
SD120UF500X45
TECHNICAL DATA
DATA SHEET 884, REV. -
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• 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected]