Sur rface Moun nt General P Purpose Si ilicon Recti ifiers

 Surrface Moun
nt General Purpose
P
Siilicon Rectiifiers
Reverse Voltagee - 50 to 10000 V
Forw
ward Current - 1 A
ATURES
FEA
• Foor surface moounted appliccations
• Loow profile paackage
• Glass Passivateed Chip Junttion
• Eaasy to pick annd place
• Leead free in coomply with EU
E RoHS 2011/65/EU directives
MECHANICAL
L DATA
• Caase: SMAF
• Teerminals: Sollderable per MIL-STD-75
M
50, Method 2026
2
• Appprox. Weighht: 27mg 0.00086oz
Maxximum Ratiings and Eleectrical charracteristics
Ratinngs at 25℃ ambbient temperatuure unless otherw
wise specified.S
Single phase haalf-wave 60 Hz, resistive or indductive load, fo
or capacitive loaad
curreent derate by 200 %.
1)Me
easured at 1 MHz and applied reveerse voltage of 4 V D.C
2)Th
hermal resistance from junction to ambient at 0.3755" (9.5 mm) lead length, P.C.B. mounted
1 of 3 2 of 3 PAC
CKAGE OU
UTLINE
Plasttic surface moounted packagge; 2 leads
SMAF
3 of 3