1N4448W FAST SWITCHING DIODE FEATURES SOD-123 1.80(.071) 1.65(.065) 1.40(.055) 1.55(.061) 3.86(0.152) 2.84(0.112) 3.9(0.154) 2.7(0.106) 3.56(0.145) 2.54(0.100) 3.7(0.146) 2.6(0.102) 0.6(.023) .71(0.028) MAX MECHANICAL DATA 0.5(.020) .50(0.020) .15(.006) Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance 1.35(.053) .135(.005) 1.15(.045) .94(.037) .127(.004) 1.05(.041) .25(.010) MIN Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking:T5 Dimensions in millimeters and (inches) Maximum ratings and electrical characteristics, Single diode @TA=25C PARAMETER Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltage Forward continuous current Average rectified output current Peak forward surge current @=1.0us @=1.0s Power dissipation Thermal resistance junction to ambient Storage temperature Non-Repetitive peak reverse voltage UNITS SYMBOLS Limits VRRM VRWM VR 75 V 53 500 250 4.0 2.0 400 315 -65 to +150 100 V mA mA A VR(RMS) IFM IO IFSM Pd RΘJA TSTG VRM mW K/W C V Electrical ratings @TA=25C PARAMETER Reverse brdakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time SYMBOLS V(BR)R VF1 VF2 VF3 VF4 IR1 IR2 Min. 75 0.62 Typ. Max. Unit V V V V V CT 0.72 0.855 1.0 1.25 2.5 25 4 uA nA pF trr 4 ns MDD ELECTRONIC Conditions IR=10uA IF=5mA IF=10mA IF=100mA IF=150mA VR=75V VR=20V VR=0V,f=1.0MHz IF=IR=10mA Irr=0.1XIR,RL=100 RATINGS AND CHARACTERISTIC CURVES 1N4448W FIG. 1- POWER DERATING CURVE FIG. 2-TYPICAL FORWARD CHARACTERISTICS 100 IF, FORWARD CURRENT(A) Pd.POWER DISSIPATION(mW) 600 500 400 300 200 TA=25 C TA=50 C 10 TA=0 C TA=85 C 1.0 TA=-30 C 100 0 0 0.1 25 50 75 100 125 150 0 TA,AMBIENT TEMPERATURE( C) IR,REVERSE CURRENT(uA) TA=100 C 1.0 TA=75 C TA=50 C TA=0 C 0.01 TA=-30 C 20 40 60 80 VR, REVERSE VOLTAGE (V) 1000 2.5 2.0 1.5 1.0 0.5 0 20 40 FIG. 5- TOTAL CAPACITANCE VS REVERSE VOLTAGE f=1MHz 3 2 1 0 1 2 3 4 60 80 VR, FORWARD CURRENT (mA) 4 CT.TOTAL CAPACITANCE (pF) 800 0 0.001 0 0 600 FIG. 4- REVERSE RECOVERY TIME VS FORWARD CURRENT Trr, REVEERSE RECOVERY TIME (nS) FIG. 3- TYPICAL REVERSE CHARACTERISTICS TA=25 C 400 VF FORWARD VOLTAGE (mV) 10 0.1 200 5 6 VR,REVERSE VOLTAGE (V) MDD ELECTRONIC 100