RENESAS R8C28

R8C/28 Group, R8C/29 Group
SINGLE-CHIP 16-BIT CMOS MCU
1.
REJ03B0169-0110
Rev.1.10
May 17, 2007
Overview
These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C/Tiny Series
CPU core, and are packaged in a 20-pin molded-plastic LSSOP. It implements sophisticated instructions for a high
level of instruction efficiency. With 1 Mbyte of address space, they are capable of executing instructions at high speed.
Furthermore, the R8C/29 Group has on-chip data flash (1 KB × 2 blocks).
The difference between the R8C/28 Group and R8C/29 Group is only the presence or absence of data flash. Their
peripheral functions are the same.
1.1
Applications
Electronic household appliances, office equipment, audio equipment, consumer products, automotive, etc.
J and K versions are under development. Specifications may be changed without prior notice.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 1 of 67
R8C/28 Group, R8C/29 Group
1.2
1. Overview
Performance Overview
Table 1.1 outlines the Functions and Specifications for R8C/28 Group and Table 1.2 outlines the Functions and
Specifications for R8C/29 Group.
Table 1.1
CPU
Peripheral
Functions
Functions and Specifications for R8C/28 Group
Item
Number of fundamental
instructions
Minimum instruction
execution time
Operating mode
Address space
Memory capacity
Ports
LED drive ports
Timers
Serial interfaces
Clock synchronous serial
interface
LIN module
A/D converter
Watchdog timer
Interrupts
Clock generation circuits
Oscillation stop detection
function
Voltage detection circuit
Power-on reset circuit
Supply voltage
Specification
89 instructions
50 ns (f(XIN) = 20 MHz, VCC = 3.0 to 5.5 V) (other than K version)
62.5 ns (f(XIN) = 16 MHz, VCC = 3.0 to 5.5 V) (K version)
100 ns (f(XIN) = 10 MHz, VCC = 2.7 to 5.5 V)
200 ns (f(XIN) = 5 MHz, VCC = 2.2 to 5.5 V) (N, D version)
Single-chip
1 Mbyte
Refer to Table 1.3 Product Information for R8C/28 Group
I/O ports: 13 pins, Input port: 3 pins
I/O ports: 8 pins (N, D version)
Timer RA: 8 bits × 1 channel
Timer RB: 8 bits × 1 channel
(Each timer equipped with 8-bit prescaler)
Timer RC: 16 bits × 1 channel
(Input capture and output compare circuits)
Timer RE: With real-time clock and compare match function
(For J, K version, compare match function only.)
1 channel (UART0): Clock synchronous serial I/O, UART
1 channel (UART1): UART
1 channel
I2C bus Interface(1)
Clock synchronous serial I/O with chip select
Hardware LIN: 1 channel (timer RA, UART0)
10-bit A/D converter: 1 circuit, 4 channels
15 bits × 1 channel (with prescaler)
Reset start selectable
Internal: 15 sources (N, D version), Internal: 14 sources (J, K version)
External: 4 sources, Software: 4 sources, Priority levels: 7 levels
3 circuits
• XIN clock generation circuit (with on-chip feedback resistor)
• On-chip oscillator (high speed, low speed)
High-speed on-chip oscillator has a frequency adjustment function
• XCIN clock generation circuit (32 kHz) (N, D version)
• Real-time clock (timer RE) (N, D version)
XIN clock oscillation stop detection function
On-chip
On-chip
Electrical
VCC = 3.0 to 5.5 V (f(XIN) = 20 MHz) (other than K version)
Characteristics
VCC = 3.0 to 5.5 V (f(XIN) = 16 MHz) (K version)
VCC = 2.7 to 5.5 V (f(XIN) = 10 MHz)
VCC = 2.2 to 5.5 V (f(XIN) = 5 MHz) (N, D version)
Current consumption (N, D Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)
version)
Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)
Typ. 2.0 µA (VCC = 3.0 V, wait mode (f(XCIN) = 32 kHz)
Typ. 0.7 µA (VCC = 3.0 V, stop mode)
Flash Memory
Programming and erasure VCC = 2.7 to 5.5 V
voltage
Programming and erasure 100 times
endurance
Operating Ambient Temperature
-20 to 85°C (N version)
-40 to 85°C (D, J version)(2), -40 to 125°C (K version)(2)
Package
20-pin molded-plastic LSSOP
NOTES:
1. I2C bus is a trademark of Koninklijke Philips Electronics N. V.
2. Specify the D, K version if D, K version functions are to be used.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 2 of 67
R8C/28 Group, R8C/29 Group
Table 1.2
CPU
Peripheral
Functions
1. Overview
Functions and Specifications for R8C/29 Group
Item
Number of fundamental
instructions
Minimum instruction
execution time
Operating mode
Address space
Memory capacity
Ports
LED drive ports
Timers
Serial interfaces
Clock synchronous serial
interface
LIN module
A/D converter
Watchdog timer
Interrupts
Clock generation circuits
Oscillation stop detection
function
Voltage detection circuit
Power-on reset circuit
Supply voltage
Specification
89 instructions
50 ns (f(XIN) = 20 MHz, VCC = 3.0 to 5.5 V) (other than K version)
62.5 ns (f(XIN) = 16 MHz, VCC = 3.0 to 5.5 V) (K version)
100 ns (f(XIN) = 10 MHz, VCC = 2.7 to 5.5 V)
200 ns (f(XIN) = 5 MHz, VCC = 2.2 to 5.5 V) (N, D version)
Single-chip
1 Mbyte
Refer to Table 1.4 Product Information for R8C/29 Group
I/O ports: 13 pins, Input port: 3 pins
I/O ports: 8 pins (N, D version)
Timer RA: 8 bits × 1 channel
Timer RB: 8 bits × 1 channel
(Each timer equipped with 8-bit prescaler)
Timer RC: 16 bits × 1 channel
(Input capture and output compare circuits)
Timer RE: With real-time clock and compare match function
(For J, K version, compare match function only.)
1 channel (UART0): Clock synchronous serial I/O, UART
1 channel (UART1): UART
1 channel
I2C bus Interface(1)
Clock synchronous serial I/O with chip select
Hardware LIN: 1 channel (timer RA, UART0)
10-bit A/D converter: 1 circuit, 4 channels
15 bits × 1 channel (with prescaler)
Reset start selectable
Internal: 15 sources (N, D version), Internal: 14 sources (J, K version)
External: 4 sources, Software: 4 sources, Priority levels: 7 levels
3 circuits
• XIN clock generation circuit (with on-chip feedback resistor)
• On-chip oscillator (high speed, low speed)
High-speed on-chip oscillator has a frequency adjustment function
• XCIN clock generation circuit (32 kHz) (N, D version)
• Real-time clock (timer RE) (N, D version)
XIN clock oscillation stop detection function
On-chip
On-chip
Electrical
VCC = 3.0 to 5.5 V (f(XIN) = 20 MHz) (other than K version)
Characteristics
VCC = 3.0 to 5.5 V (f(XIN) = 16 MHz) (K version)
VCC = 2.7 to 5.5 V (f(XIN) = 10 MHz)
VCC = 2.2 to 5.5 V (f(XIN) = 5 MHz) (N, D version)
Current consumption (N, D Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)
version)
Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)
Typ. 2.0 µA (VCC = 3.0 V, wait mode (f(XCIN) = 32 kHz)
Typ. 0.7 µA (VCC = 3.0 V, stop mode)
Flash Memory
Programming and erasure VCC = 2.7 to 5.5 V
voltage
Programming and erasure 10,000 times (data flash)
endurance
1,000 times (program ROM)
Operating Ambient Temperature
-20 to 85°C (N version)
-40 to 85°C (D, J version)(2), -40 to 125°C (K version)(2)
Package
20-pin molded-plastic LSSOP
NOTES:
1. I2C bus is a trademark of Koninklijke Philips Electronics N. V.
2. Specify the D, K version if D, K version functions are to be used.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 3 of 67
R8C/28 Group, R8C/29 Group
1.3
1. Overview
Block Diagram
Figure 1.1 shows a Block Diagram.
I/O ports
8
4
Port P1
Port P3
1
3
Port P4
Peripheral functions
System clock generation
circuit
A/D converter
(10 bits × 4 channels)
Timers
Timer RA (8 bits)
Timer RB (8 bits)
Timer RC
(16 bits × 1 channel)
Timer RE (8 bits)
XIN-XOUT
High-speed on-chip oscillator
Low-speed on-chip oscillator
XCIN-XCOUT(3)
UART or
clock synchronous serial I/O
(8 bits × 1 channel)
LIN module
(1 channel)
UART
(8 bits × 1 channel)
I2C bus interface or clock synchronous
serial I/O with chip select
(8 bits × 1 channel)
Watchdog timer
(15 bits)
R8C/Tiny Series CPU core
R0H
R1H
R0L
R1L
R2
R3
SB
ROM(1)
USP
ISP
INTB
A0
A1
FB
Memory
RAM(2)
PC
FLG
Multiplier
NOTES:
1. ROM size varies with MCU type.
2. RAM size varies with MCU type.
3. XCIN, XCOUT can be used only for N or D version.
Figure 1.1
Block Diagram
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 4 of 67
R8C/28 Group, R8C/29 Group
1.4
1. Overview
Product Information
Table 1.3 lists Product Information for R8C/28 Group and Table 1.4 lists Product Information for R8C/29 Group.
Table 1.3
Product Information for R8C/28 Group
Current of May. 2007
R5F21282SNSP
R5F21284SNSP
R5F21282SDSP
R5F21284SDSP
R5F21284JSP (D)
ROM
Capacity
8 Kbytes
16 Kbytes
8 Kbytes
16 Kbytes
16 Kbytes
RAM
Capacity
512 bytes
1 Kbyte
512 bytes
1 Kbyte
1 Kbyte
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
N version
R5F21284KSP (D)
16 Kbytes
1 Kbyte
PLSP0020JB-A
K version(1)
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
N version(1)
PLSP0020JB-A
K version(1)
Type No.
R5F21282SNXXXSP (D)
8 Kbytes
R5F21284SNXXXSP (D)
R5F21282SDXXXSP (D)
16 Kbytes
8 Kbytes
R5F21284SDXXXSP (D)
R5F21284JXXXSP (D)
16 Kbytes
16 Kbytes
512 bytes
1 Kbyte
512 bytes
1 Kbyte
1 Kbyte
R5F21284KXXXSP (D)
16 Kbytes
1 Kbyte
Package Type
Remarks
D version
J version(1)
D version(1)
Factory
programming
product(2)
J version(1)
(D): Under development
NOTES:
1. These versions are under development. Specifications may be changed without prior notice.
2. The user ROM is programmed before shipment.
Type No.
R 5 F 21 28 4 S N XXX SP
Package type:
SP: PLSP0020JB-A
ROM number
Classification
N: Operating ambient temperature -20°C to 85°C (N version)
D: Operating ambient temperature -40°C to 85°C (D version)
J: Operating ambient temperature -40°C to 85°C (J version)
K: Operating ambient temperature -40°C to 125°C (K version)
S: Low-voltage version (other no symbols)
ROM capacity
2: 8 KB
4: 16 KB
R8C/28 Group
R8C/Tiny Series
Memory type
F: Flash memory
Renesas MCU
Renesas semiconductor
Figure 1.2
Type Number, Memory Size, and Package of R8C/28 Group
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 5 of 67
R8C/28 Group, R8C/29 Group
Table 1.4
1. Overview
Product Information for R8C/29 Group
Type No.
R5F21292SNSP
R5F21294SNSP
R5F21292SDSP
R5F21294SDSP
R5F21294JSP (D)
R5F21294KSP (D)
ROM Capacity
Program
Data flash
ROM
8 Kbytes
1 Kbyte × 2
16 Kbytes
1 Kbyte × 2
8 Kbytes
1 Kbyte × 2
16 Kbytes
1 Kbyte × 2
16 Kbytes
1 Kbyte × 2
16 Kbytes
1 Kbyte × 2
Current of May. 2007
RAM
Capacity
Package Type
512 bytes
1 Kbyte
512 bytes
1 Kbyte
1 Kbyte
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
PLSP0020JB-A
J version(1)
1 Kbyte
PLSP0020JB-A
K version(1)
Remarks
N version
D version
R5F21292SNXXXSP (D)
8 Kbytes
1 Kbyte × 2
512 bytes
PLSP0020JB-A
N version(1)
R5F21294SNXXXSP (D)
R5F21292SDXXXSP (D)
16 Kbytes
8 Kbytes
1 Kbyte × 2
1 Kbyte × 2
1 Kbyte
512 bytes
PLSP0020JB-A
PLSP0020JB-A
D version(1)
R5F21294SDXXXSP (D)
R5F21294JXXXSP (D)
16 Kbytes
16 Kbytes
1 Kbyte × 2
1 Kbyte × 2
1 Kbyte
1 Kbyte
PLSP0020JB-A
PLSP0020JB-A
J version(1)
R5F21294KXXXSP (D)
16 Kbytes
1 Kbyte × 2
1 Kbyte
PLSP0020JB-A
K version(1)
Factory
programming
product(2)
(D): Under development
NOTES:
1. These versions are under development. Specifications may be changed without prior notice.
2. The user ROM is programmed before shipment.
Type No. R 5 F 21 29 4 S N XXX SP
Package type:
SP: PLSP0020JB-A
ROM number
Classification
N: Operating ambient temperature -20°C to 85°C (N version)
D: Operating ambient temperature -40°C to 85°C (D version)
J: Operating ambient temperature -40°C to 85°C (J version)
K: Operating ambient temperature -40°C to 125°C (K version)
S: Low-voltage version (other no symbols)
ROM capacity
2: 8 KB
4: 16 KB
R8C/29 Group
R8C/Tiny Series
Memory type
F: Flash memory
Renesas MCU
Renesas semiconductor
Figure 1.3
Type Number, Memory Size, and Package of R8C/29 Group
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 6 of 67
R8C/28 Group, R8C/29 Group
1.5
1. Overview
Pin Assignments
Figure 1.4 shows Pin Assignments (Top View).
20
P3_4/SDA/SCS/TRCIOC
P3_7/TRAO/SSO/RXD1/(TXD1)(2)
2
19
P3_3/INT3/SSI/TRCCLK
RESET
3
18
P1_0/KI0/AN8
(1, 3)
4
17
P1_1/KI1/AN9/TRCIOA/TRCTRG
VSS/AVSS
5
16
VREF/P4_2
(3)
6
15
P1_2/KI2/AN10/TRCIOB
VCC/AVCC
7
14
P1_3/KI3/AN11/TRBO
MODE
8
13
P1_4/TXD0
P4_5/INT0/(RXD1)(2)
9
12
P1_5/RXD0/(TRAIO)/(INT1)(2)
10
11
P1_6/CLK0/(SSI)(2)
XOUT/XCOUT/P4_7
XIN/XCIN/P4_6
P1_7/TRAIO/INT1
R8C/28 Group,
R8C/29 Group
1
PLSP0020JB-A
(20P2F-A)
(top view)
P3_5/SCL/SSCK/TRCIOD
NOTES:
1. P4_7 is an input-only port.
2. Can be assigned to the pin in parentheses by a program.
3. XCIN, XCOUT can be used only for N or D version.
4. Confirm the pin 1 position on the package by referring to the package dimensions.
Figure 1.4
Pin Assignments (Top View)
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 7 of 67
R8C/28 Group, R8C/29 Group
1.6
1. Overview
Pin Functions
Table 1.5 lists Pin Functions.
Table 1.5
Pin Functions
Type
Symbol
I/O Type
Description
Power supply input
VCC, VSS
I
Apply 2.2 V to 5.5 V (J, K version are 2.7 V to 5.5 V) to the
VCC pin. Apply 0 V to the VSS pin.
Analog power
supply input
AVCC, AVSS
I
Power supply for the A/D converter.
Connect a capacitor between AVCC and AVSS.
Reset input
RESET
I
Input “L” on this pin resets the MCU.
MODE
MODE
I
Connect this pin to VCC via a resistor.
XIN clock input
XIN
I
XIN clock output
XOUT
O
These pins are provided for XIN clock generation circuit I/O.
Connect a ceramic resonator or a crystal oscillator between
the XIN and XOUT pins. To use an external clock, input it to
the XIN pin and leave the XOUT pin open.
XCIN clock input
(N, D version)
XCIN
I
XCIN clock output
(N, D version)
XCOUT
O
INT interrupt input
INT0, INT1, INT3
I
INT interrupt input pins
Key input interrupt
KI0 to KI3
I
Key input interrupt input pins
Timer RA
TRAO
O
Timer RA output pin
TRAIO
I/O
Timer RA I/O pin
Timer RB
TRBO
O
Timer RB output pin
Timer RC
TRCCLK
I
External clock input pin
TRCTRG
Serial interface
I
bus interface
Clock synchronous
serial I/O with chip
select
Reference voltage
input
I/O
Sharing output-compare output / input-capture input / PWM /
PWM2 output pins
CLK0
I/O
Clock I/O pin
Receive data input pin
TXD0, TXD1
O
Transmit data output pin
I/O
Clock I/O pin
SDA
I/O
Data I/O pin
SSI
I/O
Data I/O pin
SCS
I/O
Chip-select signal I/O pin
SSCK
I/O
Clock I/O pin
SSO
I/O
VREF
I
Reference voltage input pin to A/D converter
I
Analog input pins to A/D converter
AN8 to AN11
I/O port
P1_0 to P1_7,
P3_3 to P3_5, P3_7,
P4_5
Input port
I
SCL
A/D converter
I: Input
External trigger input pin
TRCIOA, TRCIOB,
TRCIOC, TRCIOD
RXD0, RXD1
I2C
These pins are provided for XCIN clock generation circuit I/O.
Connect a crystal oscillator between the XCIN and XCOUT
pins. To use an external clock, input it to the XCIN pin and
leave the XCOUT pin open.
P4_2, P4_6, P4_7
O: Output
Rev.1.10 May 17, 2007
REJ03B0169-0110
I/O
I
I/O: Input and output
Page 8 of 67
Data I/O pin
CMOS I/O ports. Each port has an I/O select direction
register, allowing each pin in the port to be directed for input
or output individually.
Any port set to input can be set to use a pull-up resistor or not
by a program.
P1_0 to P1_7 also function as LED drive ports. (N, D version)
Input-only ports
R8C/28 Group, R8C/29 Group
Table 1.6
Pin Name Information by Pin Number
Pin
Control Pin
Number
Port
1
P3_5
2
P3_7
3
4
5
6
7
8
1. Overview
RESET
XOUT/
XCOUT(2)
VSS/AVSS
XIN/XCIN(2)
VCC/AVCC
MODE
9
Interrupt
I/O Pin Functions for of Peripheral Modules
Clock
Synchronous
I2C bus
Timer
Serial Interface
Serial I/O with Interface
Chip Select
TRCIOD
SSCK
SCL
TRAO
RXD1/(TXD1)(1)
A/D
Converter
SSO
P4_7
P4_6
P4_5
INT0
10
P1_7
INT1
11
P1_6
12
P1_5
(RXD1)(1)
TRAIO
CLK0
(INT1)(1)
(TRAIO)(1)
(SSI)(1)
RXD0
13
P1_4
14
P1_3
KI3
TRBO
TXD0
AN11
P1_2
KI2
TRCIOB
AN10
P4_2
P1_1
KI1
TRCIOA/
TRCTRG
AN9
18
P1_0
KI0
19
P3_3
INT3
20
P3_4
15
16
17
VRFF
AN8
TRCCLK
SSI
TRCIOC
SCS
NOTES:
1. This can be assigned to the pin in parentheses by a program.
2. XCIN, XCOUT can be used only for N or D version.
Rev.1.10 May 17, 2007
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Page 9 of 67
SDA
R8C/28 Group, R8C/29 Group
2.
2. Central Processing Unit (CPU)
Central Processing Unit (CPU)
Figure 2.1 shows the CPU Registers. The CPU contains 13 registers. R0, R1, R2, R3, A0, A1, and FB configure a
register bank. There are two sets of register bank.
b31
b15
R2
R3
b8b7
b0
R0H (high-order of R0) R0L (low-order of R0)
R1H (high-order of R1) R1L (low-order of R1)
Data registers(1)
R2
R3
A0
A1
FB
b19
b15
Address registers(1)
Frame base register(1)
b0
Interrupt table register
INTBL
INTBH
The 4 high order bits of INTB are INTBH and
the 16 low order bits of INTB are INTBL.
b19
b0
Program counter
PC
b15
b0
USP
User stack pointer
ISP
Interrupt stack pointer
SB
Static base register
b15
b0
FLG
b15
b8
IPL
b7
Flag register
b0
U I O B S Z D C
Carry flag
Debug flag
Zero flag
Sign flag
Register bank select flag
Overflow flag
Interrupt enable flag
Stack pointer select flag
Reserved bit
Processor interrupt priority level
Reserved bit
NOTE:
1. These registers comprise a register bank. There are two register banks.
Figure 2.1
CPU Registers
Rev.1.10 May 17, 2007
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R8C/28 Group, R8C/29 Group
2.1
2. Central Processing Unit (CPU)
Data Registers (R0, R1, R2, and R3)
R0 is a 16-bit register for transfer, arithmetic, and logic operations. The same applies to R1 to R3. R0 can be split
into high-order bits (R0H) and low-order bits (R0L) to be used separately as 8-bit data registers. R1H and R1L are
analogous to R0H and R0L. R2 can be combined with R0 and used as a 32-bit data register (R2R0). R3R1 is
analogous to R2R0.
2.2
Address Registers (A0 and A1)
A0 is a 16-bit register for address register indirect addressing and address register relative addressing. It is also
used for transfer, arithmetic, and logic operations. A1 is analogous to A0. A1 can be combined with A0 and as a 32bit address register (A1A0).
2.3
Frame Base Register (FB)
FB is a 16-bit register for FB relative addressing.
2.4
Interrupt Table Register (INTB)
INTB is a 20-bit register that indicates the start address of an interrupt vector table.
2.5
Program Counter (PC)
PC is 20 bits wide and indicates the address of the next instruction to be executed.
2.6
User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
The stack pointers (SP), USP, and ISP, are each 16 bits wide. The U flag of FLG is used to switch between
USP and ISP.
2.7
Static Base Register (SB)
SB is a 16-bit register for SB relative addressing.
2.8
Flag Register (FLG)
FLG is an 11-bit register indicating the CPU state.
2.8.1
Carry Flag (C)
The C flag retains carry, borrow, or shift-out bits that have been generated by the arithmetic and logic unit.
2.8.2
Debug Flag (D)
The D flag is for debugging only. Set it to 0.
2.8.3
Zero Flag (Z)
The Z flag is set to 1 when an arithmetic operation results in 0; otherwise to 0.
2.8.4
Sign Flag (S)
The S flag is set to 1 when an arithmetic operation results in a negative value; otherwise to 0.
2.8.5
Register Bank Select Flag (B)
Register bank 0 is selected when the B flag is 0. Register bank 1 is selected when this flag is set to 1.
2.8.6
Overflow Flag (O)
The O flag is set to 1 when an operation results in an overflow; otherwise to 0.
Rev.1.10 May 17, 2007
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R8C/28 Group, R8C/29 Group
2.8.7
2. Central Processing Unit (CPU)
Interrupt Enable Flag (I)
The I flag enables maskable interrupts.
Interrupt are disabled when the I flag is set to 0, and are enabled when the I flag is set to 1. The I flag is set to 0
when an interrupt request is acknowledged.
2.8.8
Stack Pointer Select Flag (U)
ISP is selected when the U flag is set to 0; USP is selected when the U flag is set to 1.
The U flag is set to 0 when a hardware interrupt request is acknowledged or the INT instruction of software
interrupt numbers 0 to 31 is executed.
2.8.9
Processor Interrupt Priority Level (IPL)
IPL is 3 bits wide and assigns processor interrupt priority levels from level 0 to level 7.
If a requested interrupt has higher priority than IPL, the interrupt is enabled.
2.8.10
Reserved Bit
If necessary, set to 0. When read, the content is undefined.
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REJ03B0169-0110
Page 12 of 67
R8C/28 Group, R8C/29 Group
3.
3. Memory
Memory
3.1
R8C/28 Group
Figure 3.1 is a Memory Map of R8C/28 Group. The R8C/28 group has 1 Mbyte of address space from addresses
00000h to FFFFFh.
The internal ROM is allocated lower addresses, beginning with address 0FFFFh. For example, a 16-Kbyte internal
ROM area is allocated addresses 0C000h to 0FFFFh.
The fixed interrupt vector table is allocated addresses 0FFDCh to 0FFFFh. They store the starting address of each
interrupt routine.
The internal RAM is allocated higher addresses, beginning with address 00400h. For example, a 1-Kbyte internal
RAM area is allocated addresses 00400h to 007FFh. The internal RAM is used not only for storing data but also for
calling subroutines and as stacks when interrupt requests are acknowledged.
Special function registers (SFRs) are allocated addresses 00000h to 002FFh. The peripheral function control
registers are allocated here. All addresses within the SFR, which have nothing allocated are reserved for future use
and cannot be accessed by users.
00000h
002FFh
SFR
(Refer to 4. Special
Function Registers
(SFRs))
00400h
Internal RAM
0XXXh
0FFDCh
Undefined instruction
Overflow
BRK instruction
Address match
Single step
Watchdog timer/oscillation stop detection/voltage monitor
0YYYYh
(Reserved)
(Reserved)
Reset
Internal ROM
(program ROM)
0FFFFh
0FFFFh
Expanded area
FFFFFh
NOTE:
1. The blank regions are reserved. Do not access locations in these regions.
Internal ROM
Part Number
R5F21282SNSP, R5F21282SDSP,
R5F21282SNXXXSP, R5F21282SDXXXSP
R5F21284SNSP, R5F21284SDSP,
R5F21284JSP, R5F21284KSP,
R5F21284SNXXXSP, R5F21284SDXXXSP,
R5F21284JXXXSP, R5F21284KXXXSP
Figure 3.1
Size
Address 0YYYYh
Size
Address 0XXXXh
8 Kbytes
0E000h
512 bytes
005FFh
16 Kbytes
0C000h
1 Kbyte
007FFh
Memory Map of R8C/28 Group
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 13 of 67
Internal RAM
R8C/28 Group, R8C/29 Group
3.2
3. Memory
R8C/29 Group
Figure 3.2 is a Memory Map of R8C/29 Group. The R8C/29 group has 1 Mbyte of address space from addresses
00000h to FFFFFh.
The internal ROM (program ROM) is allocated lower addresses, beginning with address 0FFFFh. For example, a
16-Kbyte internal ROM area is allocated addresses 0C000h to 0FFFFh.
The fixed interrupt vector table is allocated addresses 0FFDCh to 0FFFFh. They store the starting address of each
interrupt routine.
The internal ROM (data flash) is allocated addresses 02400h to 02BFFh.
The internal RAM area is allocated higher addresses, beginning with address 00400h. For example, a 1-Kbyte
internal RAM is allocated addresses 00400h to 007FFh. The internal RAM is used not only for storing data but also
for calling subroutines and as stacks when interrupt requests are acknowledged.
Special function registers (SFRs) are allocated addresses 00000h to 002FFh. The peripheral function control
registers are allocated here. All addresses within the SFR, which have nothing allocated are reserved for future use
and cannot be accessed by users.
00000h
002FFh
SFR
(Refer to 4. Special
Function Registers
(SFRs))
00400h
Internal RAM
0XXXXh
02400h
Internal ROM
(data flash)(1)
0FFDCh
02BFFh
Undefined instruction
Overflow
BRK instruction
Address match
Single step
0YYYYh
Watchdog timer/oscillation stop detection/voltage monitor
(Reserved)
(Reserved)
Reset
Internal ROM
(program ROM)
0FFFFh
0FFFFh
Expanded area
FFFFFh
NOTES:
1. Data flash block A (1 Kbyte) and B (1 Kbyte) are shown.
2. The blank regions are reserved. Do not access locations in these regions.
Internal ROM
Part Number
R5F21292SNSP, R5F21292SDSP,
R5F21292SNXXXSP, R5F21292SDXXXSP
R5F21294SNSP, R5F21294SDSP,
R5F21294JSP, R5F21294KSP,
R5F21294SNXXXSP, R5F21294SDXXXSP,
R5F21294JXXXSP, R5F21294KXXXSP
Figure 3.2
Size
Address 0YYYYh
Size
Address 0XXXXh
8 Kbytes
0E000h
512 bytes
005FFh
16 Kbytes
0C000h
1 Kbyte
007FFh
Memory Map of R8C/29 Group
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 14 of 67
Internal RAM
R8C/28 Group, R8C/29 Group
4.
4. Special Function Registers (SFRs)
Special Function Registers (SFRs)
An SFR (special function register) is a control register for a peripheral function. Tables 4.1 to 4.7 list the special
function registers.
Table 4.1
Address
0000h
0001h
0002h
0003h
0004h
0005h
0006h
0007h
0008h
0009h
000Ah
000Bh
000Ch
000Dh
000Eh
000Fh
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
0019h
001Ah
001Bh
001Ch
001Dh
001Eh
001Fh
0020h
0021h
0022h
0023h
0024h
0025h
0026h
0027h
0028h
0029h
002Ah
002Bh
002Ch
002Dh
002Eh
002Fh
SFR Information (1)(1)
Register
Symbol
After reset
Processor Mode Register 0
Processor Mode Register 1
System Clock Control Register 0
System Clock Control Register 1
PM0
PM1
CM0
CM1
00h
00h
01101000b
00100000b
Protect Register
PRCR
00h
Oscillation Stop Detection Register
Watchdog Timer Reset Register
Watchdog Timer Start Register
Watchdog Timer Control Register
Address Match Interrupt Register 0
OCD
WDTR
WDTS
WDC
RMAD0
Address Match Interrupt Enable Register
Address Match Interrupt Register 1
AIER
RMAD1
00000100b
XXh
XXh
00X11111b
00h
00h
00h
00h
00h
00h
00h
Count Source Protection Mode Register
CSPR
00h
10000000b(2)
High-Speed On-Chip Oscillator Control Register 0
High-Speed On-Chip Oscillator Control Register 1
High-Speed On-Chip Oscillator Control Register 2
FRA0
FRA1
FRA2
00h
When shipping
00h
Clock Prescaler Reset Flag
High-Speed On-Chip Oscillator Control Register 4(3)
CPSRF
FRA4
00h
When shipping
High-Speed On-Chip Oscillator Control Register 6(3)
FRA6
When shipping
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. The CSPROINI bit in the OFS register is set to 0.
3. In J, K version these regions are reserved. Do not access locations in these regions.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 15 of 67
R8C/28 Group, R8C/29 Group
Table 4.2
Address
0030h
0031h
0032h
4. Special Function Registers (SFRs)
SFR Information (2)(1)
Register
Symbol
After reset
Voltage Detection Register 1(2)
Voltage Detection Register 2(2)
VCA1
VCA2
00001000b
0033h
0034h
0035h
0036h
Voltage Monitor 1 Circuit Control Register(5)
VW1C
0037h
0038h
Voltage Monitor 2 Circuit Control Register(5)
Voltage Monitor 0 Circuit Control Register(6)
VW2C
VW0C
• N, D version 00001000b
• J, K version 0000X000b(7)
0100X000b(8)
00h
Timer RC Interrupt Control Register
TRCIC
XXXXX000b
Timer RE Interrupt Control Register
TREIC
XXXXX000b
Key Input Interrupt Control Register
A/D Conversion Interrupt Control Register
SSU / IIC Interrupt Control Register(9)
KUPIC
ADIC
SSUIC / IICIC
XXXXX000b
XXXXX000b
XXXXX000b
UART0 Transmit Interrupt Control Register
UART0 Receive Interrupt Control Register
UART1 Transmit Interrupt Control Register
UART1 Receive Interrupt Control Register
S0TIC
S0RIC
S1TIC
S1RIC
XXXXX000b
XXXXX000b
XXXXX000b
XXXXX000b
Timer RA Interrupt Control Register
TRAIC
XXXXX000b
Timer RB Interrupt Control Register
INT1 Interrupt Control Register
INT3 Interrupt Control Register
TRBIC
INT1IC
INT3IC
XXXXX000b
XX00X000b
XX00X000b
INT0 Interrupt Control Register
INT0IC
XX00X000b
• N, D version 00h(3)
00100000b(4)
• J, K version 00h(7)
01000000b(8)
0000X000b(3)
0100X001b(4)
0039h
003Fh
0040h
0041h
0042h
0043h
0044h
0045h
0046h
0047h
0048h
0049h
004Ah
004Bh
004Ch
004Dh
004Eh
004Fh
0050h
0051h
0052h
0053h
0054h
0055h
0056h
0057h
0058h
0059h
005Ah
005Bh
005Ch
005Dh
005Eh
005Fh
0060h
006Fh
0070h
007Fh
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. (N, D version) Software reset, watchdog timer reset, voltage monitor 1 reset, or voltage monitor 2 reset do not affect this register.
(J, K version) Software reset, watchdog timer reset, or voltage monitor 2 reset do not affect this register.
3. The LVD0ON bit in the OFS register is set to 1 and hardware reset.
4. Power-on reset, voltage monitor 0 reset, or the LVD0ON bit in the OFS register is set to 0 and hardware reset.
5. (N, D version) Software reset, watchdog timer reset, voltage monitor 1 reset, or voltage monitor 2 reset do not affect b2 and b3.
(J, K version) Software reset, watchdog timer reset, or voltage monitor 2 reset do not affect b2 and b3.
6. (N, D version) Software reset, watchdog timer reset, voltage monitor 1 reset, or voltage monitor 2 reset do not affect this register.
(J, K version) These regions are reserved. Do not access locations in these regions.
7. The LVD1ON bit in the OFS register is set to 1 and hardware reset.
8. Power-on reset, voltage monitor 1 reset, or the LVD1ON bit in the OFS register is set to 0 and hardware reset.
9. Selected by the IICSEL bit in the PMR register.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 16 of 67
R8C/28 Group, R8C/29 Group
Table 4.3
Address
0080h
0081h
0082h
0083h
0084h
0085h
0086h
0087h
0088h
0089h
008Ah
008Bh
008Ch
008Dh
008Eh
008Fh
0090h
0091h
0092h
0093h
0094h
0095h
0096h
0097h
0098h
0099h
009Ah
009Bh
009Ch
009Dh
009Eh
009Fh
00A0h
00A1h
00A2h
00A3h
00A4h
00A5h
00A6h
00A7h
00A8h
00A9h
00AAh
00ABh
00ACh
00ADh
00AEh
00AFh
00B0h
00B1h
00B2h
00B3h
00B4h
00B5h
00B6h
00B7h
00B8h
00B9h
00BAh
00BBh
00BCh
00BDh
00BEh
00BFh
4. Special Function Registers (SFRs)
SFR Information (3)(1)
Register
Symbol
UART0 Transmit/Receive Mode Register
UART0 Bit Rate Register
UART0 Transmit Buffer Register
U0MR
U0BRG
U0TB
UART0 Transmit/Receive Control Register 0
UART0 Transmit/Receive Control Register 1
UART0 Receive Buffer Register
U0C0
U0C1
U0RB
UART1 Transmit/Receive Mode Register
UART1 Bit Rate Register
UART1 Transmit Buffer Register
U1MR
U1BRG
U1TB
UART1 Transmit/Receive Control Register 0
UART1 Transmit/Receive Control Register 1
UART1 Receive Buffer Register
U1C0
U1C1
U1RB
SS Control Register H / IIC bus Control Register 1(2)
SS Control Register L / IIC bus Control Register 2(2)
SS Mode Register / IIC bus Mode Register(2)
SS Enable Register / IIC bus Interrupt Enable Register(2)
SS Status Register / IIC bus Status Register(2)
SS Mode Register 2 / Slave Address Register(2)
SS Transmit Data Register / IIC bus Transmit Data Register(2)
SS Receive Data Register / IIC bus Receive Data Register(2)
SSCRH / ICCR1
SSCRL / ICCR2
SSMR / ICMR
SSER / ICIER
SSSR / ICSR
SSMR2 / SAR
SSTDR / ICDRT
SSRDR / ICDRR
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. Selected by the IICSEL bit in the PMR register.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 17 of 67
After reset
00h
XXh
XXh
XXh
00001000b
00000010b
XXh
XXh
00h
XXh
XXh
XXh
00001000b
00000010b
XXh
XXh
00h
01111101b
00011000b
00h
00h / 0000X000b
00h
FFh
FFh
R8C/28 Group, R8C/29 Group
Table 4.4
Address
00C0h
00C1h
00C2h
00C3h
00C4h
00C5h
00C6h
00C7h
00C8h
00C9h
00CAh
00CBh
00CCh
00CDh
00CEh
00CFh
00D0h
00D1h
00D2h
00D3h
00D4h
00D5h
00D6h
00D7h
00D8h
00D9h
00DAh
00DBh
00DCh
00DDh
00DEh
00DFh
00E0h
00E1h
00E2h
00E3h
00E4h
00E5h
00E6h
00E7h
00E8h
00E9h
00EAh
00EBh
00ECh
00EDh
00EEh
00EFh
00F0h
00F1h
00F2h
00F3h
00F4h
00F5h
00F6h
00F7h
00F8h
00F9h
00FAh
00FBh
00FCh
00FDh
00FEh
00FFh
4. Special Function Registers (SFRs)
SFR Information (4)(1)
Register
Symbol
After reset
A/D Register
AD
XXh
XXh
A/D Control Register 2
ADCON2
00h
A/D Control Register 0
A/D Control Register 1
ADCON0
ADCON1
00h
00h
Port P1 Register
P1
00h
Port P1 Direction Register
PD1
00h
Port P3 Register
P3
00h
Port P3 Direction Register
Port P4 Register
PD3
P4
00h
00h
Port P4 Direction Register
PD4
00h
Pin Select Register 1
Pin Select Register 2
Pin Select Register 3
Port Mode Register
External Input Enable Register
INT Input Filter Select Register
Key Input Enable Register
Pull-Up Control Register 0
Pull-Up Control Register 1
Port P1 Drive Capacity Control Register(2)
PINSR1
PINSR2
PINSR3
PMR
INTEN
INTF
KIEN
PUR0
PUR1
P1DRR
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. In J, K version these regions are reserved. Do not access locations in these regions.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 18 of 67
R8C/28 Group, R8C/29 Group
Table 4.5
Address
0100h
0101h
0102h
0103h
0104h
0105h
0106h
0107h
0108h
0109h
010Ah
010Bh
010Ch
010Dh
010Eh
010Fh
0110h
0111h
0112h
0113h
0114h
0115h
0116h
0117h
0118h
0119h
011Ah
011Bh
011Ch
011Dh
011Eh
011Fh
0120h
0121h
0122h
0123h
0124h
0125h
0126h
0127h
0128h
0129h
012Ah
012Bh
012Ch
012Dh
012Eh
012Fh
0130h
0131h
0132h
0133h
0134h
0135h
0136h
0137h
0138h
0139h
013Ah
013Bh
013Ch
013Dh
013Eh
013Fh
4. Special Function Registers (SFRs)
SFR Information (5)(1)
Timer RA Control Register
Timer RA I/O Control Register
Timer RA Mode Register
Timer RA Prescaler Register
Timer RA Register
Register
Symbol
TRACR
TRAIOC
TRAMR
TRAPRE
TRA
00h
00h
00h
FFh
FFh
LIN Control Register
LIN Status Register
Timer RB Control Register
Timer RB One-Shot Control Register
Timer RB I/O Control Register
Timer RB Mode Register
Timer RB Prescaler Register
Timer RB Secondary Register
Timer RB Primary Register
LINCR
LINST
TRBCR
TRBOCR
TRBIOC
TRBMR
TRBPRE
TRBSC
TRBPR
00h
00h
00h
00h
00h
00h
FFh
FFh
FFh
Timer RE Second Data Register / Counter Data Register
Timer RE Minute Data Register / Compare Data Register
Timer RE Hour Data Register(2)
Timer RE Day of Week Data Register(2)
Timer RE Control Register 1
Timer RE Control Register 2
Timer RE Clock Source Select Register
TRESEC
TREMIN
TREHR
TREWK
TRECR1
TRECR2
TRECSR
00h
00h
00h
00h
00h
00h
00001000b
Timer RC Mode Register
Timer RC Control Register 1
Timer RC Interrupt Enable Register
Timer RC Status Register
Timer RC I/O Control Register 0
Timer RC I/O Control Register 1
Timer RC Counter
TRCMR
TRCCR1
TRCIER
TRCSR
TRCIOR0
TRCIOR1
TRC
Timer RC General Register A
TRCGRA
Timer RC General Register B
TRCGRB
Timer RC General Register C
TRCGRC
Timer RC General Register D
TRCGRD
Timer RC Control Register 2
Timer RC Digital Filter Function Select Register
Timer RC Output Master Enable Register
TRCCR2
TRCDF
TRCOER
01001000b
00h
01110000b
01110000b
10001000b
10001000b
00h
00h
FFh
FFh
FFh
FFh
FFh
FFh
FFh
FFh
00011111b
00h
01111111b
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. In J, K version these regions are reserved. Do not access locations in these regions.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 19 of 67
After reset
R8C/28 Group, R8C/29 Group
Table 4.6
4. Special Function Registers (SFRs)
SFR Information (6)(1)
Address
0140h
0141h
0142h
0143h
0144h
0145h
0146h
0147h
0148h
0149h
014Ah
014Bh
014Ch
014Dh
014Eh
014Fh
0150h
0151h
0152h
0153h
0154h
0155h
0156h
0157h
0158h
0159h
015Ah
015Bh
015Ch
015Dh
015Eh
015Fh
0160h
0161h
0162h
0163h
0164h
0165h
0166h
0167h
0168h
0169h
016Ah
016Bh
016Ch
016Dh
016Eh
016Fh
0170h
0171h
0172h
0173h
0174h
0175h
0176h
0177h
0178h
0179h
017Ah
017Bh
017Ch
017Dh
017Eh
017Fh
Register
X: Undefined
NOTE:
1. The blank regions are reserved. Do not access locations in these regions.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 20 of 67
Symbol
After reset
R8C/28 Group, R8C/29 Group
Table 4.7
Address
0180h
0181h
0182h
0183h
0184h
0185h
0186h
0187h
0188h
0189h
018Ah
018Bh
018Ch
018Dh
018Eh
018Fh
0190h
0191h
0192h
0193h
0194h
0195h
0196h
0197h
0198h
0199h
019Ah
019Bh
019Ch
019Dh
019Eh
019Fh
01A0h
01A1h
01A2h
01A3h
01A4h
01A5h
01A6h
01A7h
01A8h
01A9h
01AAh
01ABh
01ACh
01ADh
01AEh
01AFh
01B0h
01B1h
01B2h
01B3h
01B4h
01B5h
01B6h
01B7h
01B8h
01B9h
01BAh
01BBh
01BCh
01BDh
01BEh
01BFh
FFFFh
4. Special Function Registers (SFRs)
SFR Information (7)(1)
Register
Symbol
After reset
Flash Memory Control Register 4
FMR4
01000000b
Flash Memory Control Register1
FMR1
1000000Xb
Flash Memory Control Register 0
FMR0
00000001b
Option Function Select Register
OFS
(Note 2)
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. The OFS register cannot be changed by a program. Use a flash programmer to write to it.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 21 of 67
R8C/28 Group, R8C/29 Group
5.
5. Electrical Characteristics
Electrical Characteristics
5.1
N, D Version
Table 5.1
Absolute Maximum Ratings
Symbol
Parameter
Rated Value
Unit
-0.3 to 6.5
V
Input voltage
-0.3 to VCC + 0.3
V
VO
Output voltage
-0.3 to VCC + 0.3
V
Pd
Power dissipation
500
mW
Topr
Operating ambient temperature
-20 to 85 (N version) /
-40 to 85 (D version)
°C
Tstg
Storage temperature
-65 to 150
°C
VCC/AVCC
Supply voltage
VI
Table 5.2
IOH(sum)
IOH(peak)
Sum of all pins IOH(peak)
Min.
2.2
−
0.8 VCC
0
−
Standard
Typ.
−
0
−
−
−
Max.
5.5
−
VCC
0.2 VCC
-160
Sum of all pins IOH(avg)
−
−
-80
mA
Except P1_0 to P1_7
P1_0 to P1_7
Except P1_0 to P1_7
P1_0 to P1_7
Sum of all pins IOL(peak)
−
−
−
−
−
−
−
−
−
−
-10
-40
-5
-20
160
mA
mA
mA
mA
mA
−
−
80
mA
−
−
−
−
0
0
0
0
0
0
0
−
−
−
−
−
−
−
−
−
−
−
−
125
10
40
5
20
20
10
5
70
20
10
5
−
mA
mA
mA
mA
MHz
MHz
MHz
kHz
MHz
MHz
MHz
kHz
−
−
20
MHz
−
−
10
MHz
−
−
5
MHz
Parameter
Supply voltage
Supply voltage
Input “H” voltage
Input “L” voltage
Peak sum output
“H” current
Average sum
output “H” current
Peak output “H”
current
IOH(avg)
Average output
“H” current
IOL(sum)
Peak sum output
“L” currents
Average sum
Sum of all pins IOL(avg)
output “L” currents
Peak output “L”
Except P1_0 to P1_7
currents
P1_0 to P1_7
Average output
Except P1_0 to P1_7
“L” current
P1_0 to P1_7
XIN clock input oscillation frequency
IOL(sum)
IOL(peak)
IOL(avg)
f(XIN)
f(XCIN)
−
Topr = 25°C
Recommended Operating Conditions
Symbol
VCC/AVCC
VSS/AVSS
VIH
VIL
IOH(sum)
Condition
XCIN clock input oscillation frequency
System clock
OCD2 = 0
XlN clock selected
OCD2 = 1
On-chip oscillator clock
selected
Conditions
3.0 V ≤ VCC ≤ 5.5 V
2.7 V ≤ VCC < 3.0 V
2.2 V ≤ VCC < 2.7 V
2.2 V ≤ VCC ≤ 5.5 V
3.0 V ≤ VCC ≤ 5.5 V
2.7 V ≤ VCC < 3.0 V
2.2 V ≤ VCC < 2.7 V
FRA01 = 0
Low-speed on-chip
oscillator clock selected
FRA01 = 1
High-speed on-chip
oscillator clock selected
3.0 V ≤ VCC ≤ 5.5 V
FRA01 = 1
High-speed on-chip
oscillator clock selected
2.7 V ≤ VCC ≤ 5.5 V
FRA01 = 1
High-speed on-chip
oscillator clock selected
2.2 V ≤ VCC ≤ 5.5 V
NOTES:
1. VCC = 2.2 to 5.5 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. The typical values when average output current is 100 ms.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 22 of 67
Unit
V
V
V
V
mA
R8C/28 Group, R8C/29 Group
Table 5.3
5. Electrical Characteristics
A/D Converter Characteristics
Symbol
Parameter
−
Resolution
−
Absolute
accuracy
Conditions
Standard
Min.
Typ.
Max.
Unit
Vref = AVCC
−
−
10
Bits
10-bit mode
φAD = 10 MHz, Vref = AVCC = 5.0 V
−
−
±3
LSB
8-bit mode
φAD = 10 MHz, Vref = AVCC = 5.0 V
−
−
±2
LSB
10-bit mode
φAD = 10 MHz, Vref = AVCC = 3.3 V
−
−
±5
LSB
8-bit mode
φAD = 10 MHz, Vref = AVCC = 3.3 V
−
−
±2
LSB
10-bit mode
φAD = 5 MHz, Vref = AVCC = 2.2 V
−
−
±5
LSB
8-bit mode
φAD = 5 MHz, Vref = AVCC = 2.2 V
−
−
±2
LSB
Rladder
Resistor ladder
Vref = AVCC
10
−
40
kΩ
tconv
Conversion time 10-bit mode
φAD = 10 MHz, Vref = AVCC = 5.0 V
3.3
−
−
µs
φAD = 10 MHz, Vref = AVCC = 5.0 V
2.8
−
−
µs
2.2
−
AVCC
V
0
−
AVCC
V
0.25
−
10
MHz
8-bit mode
Vref
Reference voltage
VIA
Analog input voltage(2)
−
A/D operating
clock frequency
Without sample and hold
Vref = AVCC = 2.7 to 5.5 V
With sample and hold
Vref = AVCC = 2.7 to 5.5 V
1
−
10
MHz
Without sample and hold
Vref = AVCC = 2.2 to 5.5 V
0.25
−
5
MHz
With sample and hold
Vref = AVCC = 2.2 to 5.5 V
1
−
5
MHz
NOTES:
1. AVCC = 2.2 to 5.5 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. When the analog input voltage is over the reference voltage, the A/D conversion result will be 3FFh in 10-bit mode and FFh in
8-bit mode.
P1
P3
30pF
P4
Figure 5.1
Ports P1, P3, and P4 Timing Measurement Circuit
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 23 of 67
R8C/28 Group, R8C/29 Group
Table 5.4
Flash Memory (Program ROM) Electrical Characteristics
Symbol
−
5. Electrical Characteristics
Parameter
Program/erase endurance(2)
Conditions
Standard
Unit
Min.
Typ.
Max.
R8C/28 Group
100(3)
−
−
times
R8C/29 Group
1,000(3)
−
−
times
µs
−
Byte program time
−
50
400
−
Block erase time
−
0.4
9
s
td(SR-SUS)
Time delay from suspend request until
suspend
−
−
97+CPU clock
× 6 cycles
µs
−
Interval from erase start/restart until
following suspend request
650
−
−
µs
−
Interval from program start/restart until
following suspend request
0
−
−
ns
−
Time from suspend until program/erase
restart
−
−
3+CPU clock
× 4 cycles
µs
−
Program, erase voltage
2.7
−
5.5
V
−
Read voltage
2.2
−
5.5
V
−
Program, erase temperature
0
−
60
°C
−
Data hold time(7)
20
−
−
year
Ambient temperature = 55°C
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = 0 to 60°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 24 of 67
R8C/28 Group, R8C/29 Group
Table 5.5
5. Electrical Characteristics
Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)
Symbol
Parameter
Conditions
Standard
Min.
Typ.
Max.
Unit
10,000(3)
−
−
times
Byte program time
(program/erase endurance ≤ 1,000 times)
−
50
400
µs
−
Byte program time
(program/erase endurance > 1,000 times)
−
65
−
µs
−
Block erase time
(program/erase endurance ≤ 1,000 times)
−
0.2
9
s
−
Block erase time
(program/erase endurance > 1,000 times)
−
0.3
−
s
td(SR-SUS)
Time delay from suspend request until
suspend
−
−
97+CPU clock
× 6 cycles
µs
−
Interval from erase start/restart until
following suspend request
650
−
−
µs
−
Interval from program start/restart until
following suspend request
0
−
−
ns
−
Time from suspend until program/erase
restart
−
−
3+CPU clock
× 4 cycles
µs
−
Program, erase voltage
2.7
−
5.5
V
−
Read voltage
2.2
−
5.5
V
−
Program, erase temperature
-20(8)
−
85
°C
−
Data hold time(9)
20
−
−
year
−
Program/erase endurance(2)
−
Ambient temperature = 55 °C
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
is the same as that in program ROM.
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. -40°C for D version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 25 of 67
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
Suspend request
(maskable interrupt request)
FMR46
Clock-dependent
time
Fixed time
Access restart
td(SR-SUS)
Figure 5.2
Table 5.6
Time delay until Suspend
Voltage Detection 0 Circuit Electrical Characteristics
Symbol
Parameter
Condition
Vdet0
Voltage detection level
−
Voltage detection circuit self power consumption
td(E-A)
Waiting time until voltage detection circuit operation
starts(2)
Vccmin
MCU operating voltage minimum value
VCA25 = 1, VCC = 5.0 V
Standard
Unit
Min.
Typ.
Max.
2.2
2.3
2.4
V
−
0.9
−
µA
−
−
300
µs
2.2
−
−
V
NOTES:
1. The measurement condition is VCC = 2.2 V to 5.5 V and Topr = -20 to 85°C (N version) / -40 to 85°C (D version).
2. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA25 bit in the VCA2
register to 0.
Table 5.7
Voltage Detection 1 Circuit Electrical Characteristics
Symbol
Vdet1
−
Parameter
Condition
Voltage detection level(4)
Voltage monitor 1 interrupt request generation
time(2)
−
Voltage detection circuit self power consumption
td(E-A)
Waiting time until voltage detection circuit operation
starts(3)
VCA26 = 1, VCC = 5.0 V
Standard
Unit
Min.
Typ.
Max.
2.70
2.85
3.00
V
−
40
−
µs
−
0.6
−
µA
−
−
100
µs
NOTES:
1. The measurement condition is VCC = 2.2 V to 5.5 V and Topr = -20 to 85°C (N version) / -40 to 85°C (D version).
2. Time until the voltage monitor 1 interrupt request is generated after the voltage passes Vdet1.
3. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA26 bit in the VCA2
register to 0.
4. This parameter shows the voltage detection level when the power supply drops.
The voltage detection level when the power supply rises is higher than the voltage detection level when the power supply
drops by approximately 0.1 V.
Table 5.8
Voltage Detection 2 Circuit Electrical Characteristics
Symbol
Parameter
Vdet2
Voltage detection level
−
Voltage monitor 2 interrupt request generation time(2)
−
Voltage detection circuit self power consumption
td(E-A)
Waiting time until voltage detection circuit operation
starts(3)
Condition
VCA27 = 1, VCC = 5.0 V
Standard
Unit
Min.
Typ.
Max.
3.3
3.6
3.9
V
−
40
−
µs
−
0.6
−
µA
−
−
100
µs
NOTES:
1. The measurement condition is VCC = 2.2 V to 5.5 V and Topr = -20 to 85°C (N version) / -40 to 85°C (D version).
2. Time until the voltage monitor 2 interrupt request is generated after the voltage passes Vdet2.
3. Necessary time until the voltage detection circuit operates after setting to 1 again after setting the VCA27 bit in the VCA2
register to 0.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 26 of 67
R8C/28 Group, R8C/29 Group
Table 5.9
5. Electrical Characteristics
Power-on Reset Circuit, Voltage Monitor 0 Reset Electrical Characteristics(3)
Symbol
Parameter
Condition
Standard
Min.
Typ.
Unit
Max.
Vpor1
Power-on reset valid voltage(4)
−
−
0.1
V
Vpor2
Power-on reset or voltage monitor 0 reset valid
voltage
0
−
Vdet0
V
trth
External power VCC rise gradient(2)
20
−
−
mV/msec
NOTES:
1. The measurement condition is Topr = −20 to 85°C (N version) / −40 to 85°C (D version), unless otherwise specified.
2. This condition (external power VCC rise gradient) does not apply if VCC ≥ 1.0 V.
3. To use the power-on reset function, enable voltage monitor 0 reset by setting the LVD0ON bit in the OFS register to 0, the
VW0C0 and VW0C6 bits in the VW0C register to 1 respectively, and the VCA25 bit in the VCA2 register to 1.
4. tw(por1) indicates the duration the external power VCC must be held below the effective voltage (Vpor1) to enable a power on
reset. When turning on the power for the first time, maintain tw(por1) for 30 s or more if −20°C ≤ Topr ≤ 85°C, maintain tw(por1) for
3,000 s or more if −40°C ≤ Topr < −20°C.
Vdet0(3)
Vdet0(3)
2.2V
trth
trth
External
Power VCC
Vpor2
Vpor1
Sampling time(1, 2)
tw(por1)
Internal
reset signal
(“L” valid)
1
× 32
fOCO-S
1
× 32
fOCO-S
NOTES:
1. When using the voltage monitor 0 digital filter, ensure that the voltage is within the MCU operation voltage
range (2.2 V or above) during the sampling time.
2. The sampling clock can be selected. Refer to 6. Voltage Detection Circuit of Hardware Manual for details.
3. Vdet0 indicates the voltage detection level of the voltage detection 0 circuit. Refer to 6. Voltage Detection
Circuit of Hardware Manual for details.
Figure 5.3
Reset Circuit Electrical Characteristics
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 27 of 67
R8C/28 Group, R8C/29 Group
Table 5.10
High-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
fOCO40M
5. Electrical Characteristics
Parameter
High-speed on-chip oscillator frequency
temperature • supply voltage dependence
−
Value in FRA1 register after reset
−
Oscillation frequency adjustment unit of highspeed on-chip oscillator
−
Oscillation stability time
−
Self power consumption at oscillation
Condition
Standard
Unit
Min.
Typ.
Max.
VCC = 4.75 V to 5.25 V
0°C ≤ Topr ≤ 60°C(2)
39.2
40
40.8
MHz
VCC = 3.0 V to 5.5 V
−20°C ≤ Topr ≤ 85°C(2)
38.8
40
41.2
MHz
VCC = 3.0 V to 5.5 V
−40°C ≤ Topr ≤ 85°C(2)
38.4
40
41.6
MHz
VCC = 2.7 V to 5.5 V
−20°C ≤ Topr ≤ 85°C(2)
38
40
42
MHz
VCC = 2.7 V to 5.5 V
−40°C ≤ Topr ≤ 85°C(2)
37.6
40
42.4
MHz
VCC = 2.2 V to 5.5 V
−20°C ≤ Topr ≤ 85°C(3)
35.2
40
44.8
MHz
VCC = 2.2 V to 5.5 V
−40°C ≤ Topr ≤ 85°C(3)
34
40
46
MHz
VCC = 5.0 V ± 10%
−20°C ≤ Topr ≤ 85°C(2)
38.8
40
40.8
MHz
VCC = 5.0 V ± 10%
−40°C ≤ Topr ≤ 85°C(2)
38.4
40
40.8
MHz
08h(3)
−
F7h(3)
−
Adjust FRA1 register
(value after reset) to −1
−
+0.3
−
MHz
−
10
100
µs
VCC = 5.0 V, Topr = 25°C
−
400
−
µA
NOTES:
1. VCC = 2.2 to 5.5 V, Topr = −20 to 85°C (N version) / −40 to 85°C (D version), unless otherwise specified.
2. These standard values show when the FRA1 register value after reset is assumed.
3. These standard values show when the corrected value of the FRA6 register is written to the FRA1 register.
Table 5.11
Low-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
Parameter
Condition
Standard
Min.
Typ.
Max.
Unit
fOCO-S
Low-speed on-chip oscillator frequency
30
125
250
−
Oscillation stability time
−
10
100
µs
−
Self power consumption at oscillation
−
15
−
µA
VCC = 5.0 V, Topr = 25°C
kHz
NOTE:
1. VCC = 2.2 to 5.5 V, Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
Table 5.12
Power Supply Circuit Timing Characteristics
Symbol
Parameter
Condition
Standard
Min.
Typ.
Max.
Unit
td(P-R)
Time for internal power supply stabilization during
power-on(2)
1
−
2000
µs
td(R-S)
STOP exit time(3)
−
−
150
µs
NOTES:
1. The measurement condition is VCC = 2.2 to 5.5 V and Topr = 25°C.
2. Waiting time until the internal power supply generation circuit stabilizes during power-on.
3. Time until system clock supply starts after the interrupt is acknowledged to exit stop mode.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 28 of 67
R8C/28 Group, R8C/29 Group
Table 5.13
Symbol
5. Electrical Characteristics
Timing Requirements of Clock Synchronous Serial I/O with Chip Select(1)
Parameter
Conditions
Standard
Min.
Typ.
Unit
Max.
tSUCYC
SSCK clock cycle time
4
−
−
tCYC(2)
tHI
SSCK clock “H” width
0.4
−
0.6
tSUCYC
tLO
SSCK clock “L” width
0.4
−
0.6
tSUCYC
tRISE
SSCK clock rising
time
Master
−
−
1
tCYC(2)
Slave
−
−
1
µs
tFALL
SSCK clock falling
time
Master
−
−
1
tCYC(2)
−
−
1
µs
tSU
SSO, SSI data input setup time
100
−
−
ns
tH
SSO, SSI data input hold time
1
−
−
tCYC(2)
tLEAD
Slave
SCS setup time
Slave
1tCYC + 50
−
−
ns
tLAG
SCS hold time
Slave
1tCYC + 50
−
−
ns
tOD
SSO, SSI data output delay time
tSA
SSI slave access time
tOR
SSI slave out open time
−
−
1
tCYC(2)
2.7 V ≤ VCC ≤ 5.5 V
−
−
1.5tCYC + 100
ns
2.2 V ≤ VCC < 2.7 V
−
−
1.5tCYC + 200
ns
2.7 V ≤ VCC ≤ 5.5 V
−
−
1.5tCYC + 100
ns
2.2 V ≤ VCC < 2.7 V
−
−
1.5tCYC + 200
ns
NOTES:
1. VCC = 2.2 to 5.5 V, VSS = 0 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. 1tCYC = 1/f1(s)
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 29 of 67
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
4-Wire Bus Communication Mode, Master, CPHS = 1
VIH or VOH
SCS (output)
VIH or VOH
tHI
tFALL
tRISE
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO
tSUCYC
SSO (output)
tOD
SSI (input)
tSU
tH
4-Wire Bus Communication Mode, Master, CPHS = 0
VIH or VOH
SCS (output)
VIH or VOH
tHI
tFALL
tRISE
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO
tSUCYC
SSO (output)
tOD
SSI (input)
tSU
tH
CPHS, CPOS: Bits in SSMR register
Figure 5.4
I/O Timing of Clock Synchronous Serial I/O with Chip Select (Master)
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 30 of 67
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
4-Wire Bus Communication Mode, Slave, CPHS = 1
VIH or VOH
SCS (input)
VIH or VOH
tLEAD
tHI
tFALL
tRISE
tLAG
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO
tSUCYC
SSO (input)
tSU
tH
SSI (output)
tSA
tOD
tOR
4-Wire Bus Communication Mode, Slave, CPHS = 0
VIH or VOH
SCS (input)
VIH or VOH
tHI
tLEAD
tFALL
tRISE
tLAG
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO
tSUCYC
SSO (input)
tSU
tH
SSI (output)
tSA
tOD
tOR
CPHS, CPOS: Bits in SSMR register
Figure 5.5
I/O Timing of Clock Synchronous Serial I/O with Chip Select (Slave)
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 31 of 67
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
tHI
VIH or VOH
SSCK
VIH or VOH
tLO
tSUCYC
SSO (output)
tOD
SSI (input)
tSU
Figure 5.6
tH
I/O Timing of Clock Synchronous Serial I/O with Chip Select (Clock Synchronous
Communication Mode)
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 32 of 67
R8C/28 Group, R8C/29 Group
Table 5.14
5. Electrical Characteristics
Timing Requirements of I2C bus Interface (1)
Symbol
Parameter
Condition
tSCL
SCL input cycle time
tSCLH
SCL input “H” width
tSCLL
SCL input “L” width
tsf
tSP
SCL, SDA input fall time
SCL, SDA input spike pulse rejection time
tBUF
Standard
Typ.
(2)
−
12tCYC + 600
(2)
−
3tCYC + 300
Min.
Unit
Max.
−
ns
−
ns
5tCYC + 500(2)
−
−
−
−
ns
−
300
−
SDA input bus-free time
5tCYC(2)
−
1tCYC(2)
−
ns
ns
tSTAH
Start condition input hold time
3tCYC(2)
−
−
ns
tSTAS
Retransmit start condition input setup time
3tCYC(2)
−
−
ns
tSTOP
Stop condition input setup time
3tCYC(2)
−
−
ns
tSDAS
Data input setup time
−
−
ns
tSDAH
Data input hold time
1tCYC + 20(2)
0
−
−
ns
NOTES:
1. VCC = 2.2 to 5.5 V, VSS = 0 V and Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. 1tCYC = 1/f1(s)
VIH
SDA
VIL
tBUF
tSTAH
tSCLH
tSTAS
tSP
tSTOP
SCL
P(2)
S(1)
tsf
Sr(3)
tSCLL
tsr
tSCL
NOTES:
1. Start condition
2. Stop condition
3. Retransmit start condition
Figure 5.7
I/O Timing of I2C bus Interface
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 33 of 67
P(2)
tSDAS
tSDAH
ns
R8C/28 Group, R8C/29 Group
Table 5.15
Electrical Characteristics (1) [VCC = 5 V]
Symbol
VOH
Parameter
Output “H” voltage
Except P1_0 to P1_7,
XOUT
P1_0 to P1_7
XOUT
VOL
Output “L” voltage
Except P1_0 to P1_7,
XOUT
P1_0 to P1_7
XOUT
VT+-VT-
5. Electrical Characteristics
Hysteresis
Condition
IOH = -5 mA
IOH = -200 µA
Drive capacity HIGH
Drive capacity LOW
Drive capacity HIGH
Drive capacity LOW
IOL = 5 mA
IOL = 200 µA
Drive capacity HIGH
Drive capacity LOW
Drive capacity HIGH
Drive capacity LOW
INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, RXD1,
CLK0, SSI, SCL,
SDA, SSO
RfXCIN
VRAM
Input “H” current
Input “L” current
Pull-up resistance
Feedback
resistance
Feedback
resistance
RAM hold voltage
IOL = 20 mA
IOL = 5 mA
IOL = 1 mA
IOL = 500 µA
Max.
VCC
VCC
VCC
VCC
VCC
VCC
2.0
0.45
2.0
2.0
2.0
2.0
−
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
0.1
1.0
−
V
−
−
−
XIN
30
−
50
1.0
5.0
-5.0
167
−
µA
−
µA
kΩ
MΩ
XCIN
−
18
−
MΩ
1.8
−
−
V
RESET
IIH
IIL
RPULLUP
RfXIN
IOH = -20 mA
IOH = -5 mA
IOH = -1 mA
IOH = -500 µA
Standard
Min.
Typ.
VCC − 2.0
−
VCC − 0.5
−
VCC − 2.0
−
VCC − 2.0
−
VCC − 2.0
−
VCC − 2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
0.5
VI = 5 V, VCC = 5V
VI = 0 V, VCC = 5V
VI = 0 V, VCC = 5V
During stop mode
NOTE:
1. VCC = 4.2 to 5.5 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), f(XIN) = 20 MHz, unless otherwise specified.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 34 of 67
R8C/28 Group, R8C/29 Group
Table 5.16
Symbol
ICC
5. Electrical Characteristics
Electrical Characteristics (2) [Vcc = 5 V]
(Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.)
Parameter
Condition
Power supply
High-speed
current
clock mode
(VCC = 3.3 to 5.5 V)
Single-chip mode,
output pins are
open, other pins
are VSS
High-speed
on-chip
oscillator mode
Low-speed
on-chip
oscillator mode
Low-speed
clock mode
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 35 of 67
XIN = 20 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
XIN = 16 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
XIN = 20 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN = 16 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator on fOCO = 20 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
XIN clock off
High-speed on-chip oscillator on fOCO = 20 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR47 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz
FMR47 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz
Program operation on RAM
Flash memory off, FMSTP = 1
Min.
−
Standard
Typ.
Max.
10
17
Unit
mA
−
9
15
mA
−
6
−
mA
−
5
−
mA
−
4
−
mA
−
2.5
−
mA
−
10
15
mA
−
4
−
mA
−
5.5
10
mA
−
2.5
−
mA
−
130
300
µA
−
130
300
µA
−
30
−
µA
R8C/28 Group, R8C/29 Group
Table 5.17
Symbol
ICC
5. Electrical Characteristics
Electrical Characteristics (3) [Vcc = 5 V]
(Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.)
Parameter
Condition
Power supply
Wait mode
current
(VCC = 3.3 to 5.5 V)
Single-chip mode,
output pins are
open, other pins
are VSS
Stop mode
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 36 of 67
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz (high drive)
While a WAIT instruction is executed
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz (low drive)
While a WAIT instruction is executed
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
Min.
−
Standard
Typ.
Max.
25
75
Unit
µA
−
23
60
µA
−
4.0
−
µA
−
2.2
−
µA
−
0.8
3.0
µA
−
1.2
−
µA
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
Timing Requirements
(Unless Otherwise Specified: VCC = 5 V, VSS = 0 V at Topr = 25°C) [VCC = 5 V]
Table 5.18
XIN Input, XCIN Input
Symbol
tc(XIN)
tWH(XIN)
tWL(XIN)
tc(XCIN)
tWH(XCIN)
tWL(XCIN)
Standard
Min.
Max.
50
−
25
−
25
−
14
−
7
−
7
−
Parameter
XIN input cycle time
XIN input “H” width
XIN input “L” width
XCIN input cycle time
XCIN input “H” width
XCIN input “L” width
tC(XIN)
Unit
ns
ns
ns
µs
µs
µs
VCC = 5 V
tWH(XIN)
XIN input
tWL(XIN)
Figure 5.8
Table 5.19
XIN Input and XCIN Input Timing Diagram when VCC = 5 V
TRAIO Input
Symbol
tc(TRAIO)
tWH(TRAIO)
tWL(TRAIO)
Standard
Min.
Max.
100
−
40
−
40
−
Parameter
TRAIO input cycle time
TRAIO input “H” width
TRAIO input “L” width
tC(TRAIO)
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
Figure 5.9
TRAIO Input Timing Diagram when VCC = 5 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 37 of 67
Unit
ns
ns
ns
VCC = 5 V
R8C/28 Group, R8C/29 Group
Table 5.20
5. Electrical Characteristics
Serial Interface
Symbol
tc(CK)
tW(CKH)
tW(CKL)
td(C-Q)
th(C-Q)
tsu(D-C)
th(C-D)
Standard
Min.
Max.
200
−
100
−
100
−
−
50
0
−
50
−
90
−
Parameter
CLK0 input cycle time
CLK0 input “H” width
CLK0 input “L” width
TXDi output delay time
TXDi hold time
RXDi input setup time
RXDi input hold time
Unit
ns
ns
ns
ns
ns
ns
ns
i = 0 or 1
VCC = 5 V
tC(CK)
tW(CKH)
CLK0
tW(CKL)
th(C-Q)
TXDi
td(C-Q)
tsu(D-C)
th(C-D)
RXDi
i = 0 or 1
Figure 5.10
Table 5.21
Serial Interface Timing Diagram when VCC = 5 V
External Interrupt INTi (i = 0, 1, 3) Input
tW(INH)
INTi input “H” width
Standard
Min.
Max.
(1)
−
250
tW(INL)
INTi input “L” width
250(2)
Symbol
Parameter
−
Unit
ns
ns
NOTES:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
VCC = 5 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.11
External Interrupt INTi Input Timing Diagram when VCC = 5 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 38 of 67
R8C/28 Group, R8C/29 Group
Table 5.22
Electrical Characteristics (3) [VCC = 3 V]
Symbol
VOH
5. Electrical Characteristics
Parameter
Output “H” voltage
Except P1_0 to P1_7,
XOUT
P1_0 to P1_7
Output “L” voltage
IIH
IIL
RPULLUP
RfXIN
RfXCIN
VRAM
Input “H” current
Input “L” current
Pull-up resistance
Feedback resistance
Feedback resistance
RAM hold voltage
Unit
V
VCC − 0.5
−
VCC
V
IOH = -1 mA
VCC − 0.5
−
VCC
V
IOH = -0.1 mA
VCC − 0.5
−
VCC
V
IOH = -50 µA
VCC − 0.5
−
VCC
V
−
−
0.5
V
Drive capacity
HIGH
Drive capacity
LOW
Drive capacity
HIGH
Drive capacity
LOW
IOL = 5 mA
−
−
0.5
V
IOL = 1 mA
−
−
0.5
V
IOL = 0.1 mA
−
−
0.5
V
IOL = 50 µA
−
−
0.5
V
INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, RXD1,
CLK0, SSI, SCL,
SDA, SSO
0.1
0.3
−
V
RESET
0.1
0.4
−
V
−
−
−
66
−
−
1.8
160
3.0
18
−
4.0
-4.0
500
−
−
−
µA
−
Except P1_0 to P1_7,
XOUT
P1_0 to P1_7
Hysteresis
Max.
VCC
IOH = -5 mA
XOUT
VT+-VT-
IOH = -1 mA
Standard
Min.
Typ.
VCC − 0.5
−
Drive capacity
HIGH
Drive capacity
LOW
Drive capacity
HIGH
Drive capacity
LOW
IOL = 1 mA
XOUT
VOL
Condition
VI = 3 V, VCC = 3V
VI = 0 V, VCC = 3V
VI = 0 V, VCC = 3V
XIN
XCIN
During stop mode
µA
kΩ
MΩ
MΩ
V
NOTE:
1. VCC =2.7 to 3.3 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), f(XIN) = 10 MHz, unless otherwise specified.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 39 of 67
R8C/28 Group, R8C/29 Group
Table 5.23
Symbol
ICC
5. Electrical Characteristics
Electrical Characteristics (4) [Vcc = 3 V]
(Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.)
Parameter
Condition
Power supply current High-speed
(VCC = 2.7 to 3.3 V)
clock mode
Single-chip mode,
output pins are open,
other pins are VSS
High-speed
on-chip
oscillator
mode
Low-speed
on-chip
oscillator
mode
Low-speed
clock mode
Wait mode
Stop mode
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 40 of 67
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR47 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz
FMR47 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz
Program operation on RAM
Flash memory off, FMSTP = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz (high drive)
While a WAIT instruction is executed
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz (low drive)
While a WAIT instruction is executed
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
Min.
−
Standard
Typ.
Max.
6
−
Unit
mA
−
2
−
mA
−
5
9
mA
−
2
−
mA
−
130
300
µA
−
130
300
µA
−
30
−
µA
−
25
70
µA
−
23
55
µA
−
3.8
−
µA
−
2.0
−
µA
−
0.7
3.0
µA
−
1.1
−
µA
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
Timing requirements
(Unless Otherwise Specified: VCC = 3 V, VSS = 0 V at Topr = 25°C) [VCC = 3 V]
XIN Input, XCIN Input
Table 5.24
Symbol
tc(XIN)
tWH(XIN)
tWL(XIN)
tc(XCIN)
tWH(XCIN)
tWL(XCIN)
Standard
Min.
Max.
100
−
40
−
40
−
14
−
7
−
7
−
Parameter
XIN input cycle time
XIN input “H” width
XIN input “L” width
XCIN input cycle time
XCIN input “H” width
XCIN input “L” width
tC(XIN)
Unit
ns
ns
ns
µs
µs
µs
VCC = 3 V
tWH(XIN)
XIN input
tWL(XIN)
XIN Input and XCIN Input Timing Diagram when VCC = 3 V
Figure 5.12
Table 5.25
TRAIO Input
Symbol
tc(TRAIO)
tWH(TRAIO)
tWL(TRAIO)
Standard
Min.
Max.
300
−
120
−
120
−
Parameter
TRAIO input cycle time
TRAIO input “H” width
TRAIO input “L” width
tC(TRAIO)
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
Figure 5.13
TRAIO Input Timing Diagram when VCC = 3 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 41 of 67
Unit
ns
ns
ns
VCC = 3 V
R8C/28 Group, R8C/29 Group
Table 5.26
5. Electrical Characteristics
Serial Interface
Symbol
tc(CK)
tW(CKH)
tW(CKL)
td(C-Q)
th(C-Q)
tsu(D-C)
th(C-D)
Standard
Min.
Max.
300
−
150
−
150
−
−
80
0
−
70
−
90
−
Parameter
CLK0 input cycle time
CLK0 input “H” width
CLK0 Input “L” width
TXDi output delay time
TXDi hold time
RXDi input setup time
RXDi input hold time
Unit
ns
ns
ns
ns
ns
ns
ns
i = 0 or 1
VCC = 3 V
tC(CK)
tW(CKH)
CLK0
tW(CKL)
th(C-Q)
TXDi
td(C-Q)
tsu(D-C)
th(C-D)
RXDi
i = 0 or 1
Figure 5.14
Table 5.27
Serial Interface Timing Diagram when VCC = 3 V
External Interrupt INTi (i = 0, 1, 3) Input
tW(INH)
INTi input “H” width
Standard
Min.
Max.
(1)
−
380
tW(INL)
INTi input “L” width
380(2)
Symbol
Parameter
Unit
−
ns
ns
NOTES:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
VCC = 3 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.15
External Interrupt INTi Input Timing Diagram when VCC = 3 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 42 of 67
R8C/28 Group, R8C/29 Group
Table 5.28
Electrical Characteristics (5) [VCC = 2.2 V]
Symbol
VOH
5. Electrical Characteristics
Parameter
Output “H” voltage
Except P1_0 to P1_7,
XOUT
P1_0 to P1_7
Output “L” voltage
IIH
IIL
RPULLUP
RfXIN
RfXCIN
VRAM
Input “H” current
Input “L” current
Pull-up resistance
Feedback resistance
Feedback resistance
RAM hold voltage
Max.
VCC
V
−
VCC
V
IOH = -1 mA
VCC - 0.5
−
VCC
V
IOH = -0.1 mA
VCC - 0.5
−
VCC
V
IOH = -50 µA
VCC - 0.5
−
VCC
V
−
−
0.5
V
Drive capacity
HIGH
Drive capacity
LOW
Drive capacity
HIGH
Drive capacity
LOW
IOL = 2 mA
−
−
0.5
V
IOL = 1 mA
−
−
0.5
V
IOL = 0.1 mA
−
−
0.5
V
IOL = 50 µA
−
−
0.5
V
INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, RXD1,
CLK0, SSI, SCL,
SDA, SSO
0.05
0.3
−
V
RESET
0.05
0.15
−
V
−
−
−
100
−
−
1.8
200
5
35
−
4.0
-4.0
600
−
−
−
µA
−
VI = 2.2 V
VI = 0 V
VI = 0 V
XIN
XCIN
During stop mode
NOTE:
1. VCC = 2.2 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), f(XIN) = 5 MHz, unless otherwise specified.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Unit
VCC - 0.5
Except P1_0 to P1_7,
XOUT
P1_0 to P1_7
Hysteresis
Standard
Typ.
−
IOH = -2 mA
XOUT
VT+-VT-
IOH = -1 mA
Min.
VCC - 0.5
Drive capacity
HIGH
Drive capacity
LOW
Drive capacity
HIGH
Drive capacity
LOW
IOL = 1 mA
XOUT
VOL
Condition
Page 43 of 67
µA
kΩ
MΩ
MΩ
V
R8C/28 Group, R8C/29 Group
Table 5.29
Symbol
ICC
5. Electrical Characteristics
Electrical Characteristics (6) [Vcc = 2.2 V]
(Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.)
Parameter
Condition
Power supply current High-speed
(VCC = 2.2 to 2.7 V)
clock mode
Single-chip mode,
output pins are open,
other pins are VSS
High-speed
on-chip
oscillator
mode
Low-speed
on-chip
oscillator
mode
Low-speed
clock mode
Wait mode
Stop mode
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 44 of 67
XIN = 5 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
XIN = 5 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator on fOCO = 5 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
XIN clock off
High-speed on-chip oscillator on fOCO = 5 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR47 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz
FMR47 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz
Program operation on RAM
Flash memory off, FMSTP = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz (high drive)
While a WAIT instruction is executed
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
XCIN clock oscillator on = 32 kHz (low drive)
While a WAIT instruction is executed
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
Min.
−
Standard
Typ.
Max.
3.5
−
Unit
mA
−
1.5
−
mA
−
3.5
−
mA
−
1.5
−
mA
−
100
230
µA
−
100
230
µA
−
25
−
µA
−
22
60
µA
−
20
55
µA
−
3.0
−
µA
−
1.8
−
µA
−
0.7
3.0
µA
−
1.1
−
µA
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
Timing requirements
(Unless Otherwise Specified: VCC = 2.2 V, VSS = 0 V at Topr = 25°C) [VCC = 2.2 V]
XIN Input, XCIN Input
Table 5.30
Symbol
tc(XIN)
tWH(XIN)
tWL(XIN)
tc(XCIN)
tWH(XCIN)
tWL(XCIN)
Standard
Min.
Max.
200
−
90
−
90
−
14
−
7
−
7
−
Parameter
XIN input cycle time
XIN input “H” width
XIN input “L” width
XCIN input cycle time
XCIN input “H” width
XCIN input “L” width
tC(XIN)
Unit
ns
ns
ns
µs
µs
µs
VCC = 2.2 V
tWH(XIN)
XIN input
tWL(XIN)
XIN Input and XCIN Input Timing Diagram when VCC = 2.2 V
Figure 5.16
Table 5.31
TRAIO Input
Symbol
tc(TRAIO)
tWH(TRAIO)
tWL(TRAIO)
Standard
Min.
Max.
500
−
200
−
200
−
Parameter
TRAIO input cycle time
TRAIO input “H” width
TRAIO input “L” width
tC(TRAIO)
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
Figure 5.17
TRAIO Input Timing Diagram when VCC = 2.2 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 45 of 67
Unit
ns
ns
ns
VCC = 2.2 V
R8C/28 Group, R8C/29 Group
Table 5.32
5. Electrical Characteristics
Serial Interface
Symbol
tc(CK)
tW(CKH)
tW(CKL)
td(C-Q)
th(C-Q)
tsu(D-C)
th(C-D)
Standard
Min.
Max.
800
−
400
−
400
−
−
200
0
−
150
−
90
−
Parameter
CLK0 input cycle time
CLK0 input “H” width
CLK0 input “L” width
TXDi output delay time
TXDi hold time
RXDi input setup time
RXDi input hold time
Unit
ns
ns
ns
ns
ns
ns
ns
i = 0 or 1
VCC = 2.2 V
tC(CK)
tW(CKH)
CLK0
tW(CKL)
th(C-Q)
TXDi
td(C-Q)
tsu(D-C)
th(C-D)
RXDi
i = 0 or 1
Figure 5.18
Table 5.33
Serial Interface Timing Diagram when VCC = 2.2 V
External Interrupt INTi (i = 0, 1, 3) Input
INTi input “H” width
Standard
Min.
Max.
−
1000(1)
INTi input “L” width
1000(2)
Symbol
tW(INH)
tW(INL)
Parameter
−
Unit
ns
ns
NOTES:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
VCC = 2.2 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.19
External Interrupt INTi Input Timing Diagram when VCC = 2.2 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 46 of 67
R8C/28 Group, R8C/29 Group
5.2
5. Electrical Characteristics
J, K Version
J and K versions are under development. Specifications may be changed without prior notice.
Table 5.34
Absolute Maximum Ratings
Symbol
VCC/AVCC
VI
VO
Pd
Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Topr
Operating ambient temperature
Tstg
Storage temperature
Condition
−40 °C ≤ Topr ≤ 85 °C
85 °C ≤ Topr ≤ 125 °C
Table 5.35
IOH(peak)
IOH(avg)
IOL(sum)
IOL(peak)
IOL(avg)
f(XIN)
−
Unit
V
V
V
mW
125
-40 to 85 (J version) /
-40 to 125 (K version)
-65 to 150
mW
°C
°C
Recommended Operating Conditions
Symbol
VCC/AVCC
VSS/AVSS
VIH
VIL
IOH(sum)
Rated Value
-0.3 to 6.5
-0.3 to VCC + 0.3
-0.3 to VCC + 0.3
300
Parameter
Supply voltage
Supply voltage
Input “H” voltage
Input “L” voltage
Peak sum output Sum of all pins
“H” current
IOH(peak)
Peak output “H”
current
Average output
“H” current
Peak sum output Sum of all pins
“L” currents
IOL(peak)
Peak output “L”
currents
Average output
“L” current
XIN clock input oscillation frequency
System clock
OCD2 = 0
XlN clock selected
OCD2 = 1
On-chip oscillator
clock selected
Conditions
3.0 V ≤ VCC ≤ 5.5 V (other than K
version)
3.0 V ≤ VCC ≤ 5.5 V (K version)
2.7 V ≤ VCC < 3.0 V
3.0 V ≤ VCC ≤ 5.5 V (other than K
version)
3.0 V ≤ VCC ≤ 5.5 V (K version)
2.7 V ≤ VCC < 3.0 V
FRA01 = 0
Low-speed on-chip oscillator clock
selected
FRA01 = 1
High-speed on-chip oscillator clock
selected (other than K version)
FRA01 = 1
High-speed on-chip oscillator clock
selected
Min.
2.7
−
0.8 VCC
0
−
Standard
Typ.
−
0
−
−
−
Max.
5.5
−
VCC
0.2 VCC
-60
−
−
-10
mA
−
−
-5
mA
−
−
60
mA
−
−
10
mA
−
−
5
mA
0
−
20
MHz
0
0
0
−
16
10
20
MHz
MHz
MHz
0
0
−
−
125
16
10
−
MHz
MHz
kHz
−
−
20
MHz
−
−
10
MHz
−
−
−
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. The typical values when average output current is 100 ms.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 47 of 67
Unit
V
V
V
V
mA
R8C/28 Group, R8C/29 Group
Table 5.36
A/D Converter Characteristics
Symbol
−
−
Rladder
tconv
Vref
VIA
−
5. Electrical Characteristics
Parameter
Resolution
Absolute
accuracy
Conditions
Vref = AVCC
φAD = 10 MHz, Vref = AVCC = 5.0 V
φAD = 10 MHz, Vref = AVCC = 5.0 V
φAD = 10 MHz, Vref = AVCC = 3.3 V
φAD = 10 MHz, Vref = AVCC = 3.3 V
Vref = AVCC
φAD = 10 MHz, Vref = AVCC = 5.0 V
φAD = 10 MHz, Vref = AVCC = 5.0 V
10-bit mode
8-bit mode
10-bit mode
8-bit mode
Resistor ladder
Conversion time 10-bit mode
8-bit mode
Reference voltage
Analog input voltage(2)
A/D operating
Without sample and hold
clock frequency With sample and hold
Min.
−
−
−
−
−
10
3.3
2.8
2.7
0
0.25
1
Standard
Typ.
Max.
−
10
−
±3
−
±2
−
±5
−
±2
−
40
−
−
−
−
−
AVCC
−
AVCC
−
−
10
10
Unit
Bits
LSB
LSB
LSB
LSB
kΩ
µs
µs
V
V
MHz
MHz
NOTES:
1. AVCC = 2.7 to 5.5 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. When the analog input voltage is over the reference voltage, the A/D conversion result will be 3FFh in 10-bit mode and FFh in
8-bit mode.
P1
P3
30pF
P4
Figure 5.20
Ports P1, P3, and P4 Timing Measurement Circuit
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 48 of 67
R8C/28 Group, R8C/29 Group
Table 5.37
Flash Memory (Program ROM) Electrical Characteristics
Symbol
−
−
Parameter
Program/erase endurance(2)
−
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
−
Data hold time(7)
−
td(SR-SUS)
−
−
−
−
−
5. Electrical Characteristics
Conditions
Min.
Standard
Typ.
−
Unit
Max.
−
times
R8C/28 Group
100(3)
R8C/29 Group
1,000(3)
−
−
−
−
−
times
50
0.4
−
µs
650
−
400
9
97+CPU clock
× 6 cycles
−
µs
0
−
−
ns
−
−
µs
2.7
2.7
0
20
−
3+CPU clock
× 4 cycles
5.5
5.5
60
−
Ambient temperature = 55°C
−
−
−
s
µs
V
V
°C
year
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = 0 to 60°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 49 of 67
R8C/28 Group, R8C/29 Group
Table 5.38
Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)
Symbol
−
Parameter
−
Program/erase endurance(2)
Byte program time
(program/erase endurance ≤ 1,000 times)
Byte program time
(program/erase endurance > 1,000 times)
Block erase time
(program/erase endurance ≤ 1,000 times)
Block erase time
(program/erase endurance > 1,000 times)
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
−
Data hold time(9)
−
−
−
−
td(SR-SUS)
−
−
−
−
−
5. Electrical Characteristics
Conditions
Min.
Unit
Max.
−
times
50
400
µs
−
65
−
µs
−
0.2
9
s
−
0.3
−
s
−
−
µs
650
−
97+CPU clock
× 6 cycles
−
µs
0
−
−
ns
−
−
µs
2.7
2.7
−
3+CPU clock
× 4 cycles
5.5
5.5
-40
20
−
10,000(3)
−
Ambient temperature = 55 °C
Standard
Typ.
−
−
−
85(8)
−
V
V
°C
year
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
is the same as that in program ROM.
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. 125°C for K version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 50 of 67
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
Suspend request
(maskable interrupt request)
FMR46
Clock-dependent
time
Fixed time
Access restart
td(SR-SUS)
Figure 5.21
Table 5.39
Time delay until Suspend
Voltage Detection 1 Circuit Electrical Characteristics
Symbol
Vdet1
−
td(E-A)
Vccmin
Parameter
Condition
Voltage detection level(2, 4)
Voltage detection circuit self power consumption
Waiting time until voltage detection circuit operation
starts(3)
MCU operating voltage minimum value
VCA26 = 1, VCC = 5.0 V
Min.
2.70
−
Standard
Typ.
Max.
2.85
3.0
Unit
V
−
µA
−
0.6
−
100
µs
2.70
−
−
V
NOTES:
1. The measurement condition is VCC = 2.7 V to 5.5 V and Topr = -40 to 85°C (J version) / -40 to 125°C (K version).
2. Hold Vdet2 > Vdet1.
3. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA26 bit in the VCA2
register to 0.
4. This parameter shows the voltage detection level when the power supply drops.
The voltage detection level when the power supply rises is higher than the voltage detection level when the power supply
drops by approximately 0.1 V.
Table 5.40
Voltage Detection 2 Circuit Electrical Characteristics
Symbol
Vdet2
−
−
td(E-A)
Parameter
Condition
Voltage detection level(2)
time(3)
Voltage monitor 2 interrupt request generation
Voltage detection circuit self power consumption
Waiting time until voltage detection circuit operation
starts(4)
VCA27 = 1, VCC = 5.0 V
Min.
3.3
Standard
Typ.
Max.
3.6
3.9
Unit
V
−
40
−
µs
−
0.6
−
−
µA
100
µs
−
NOTES:
1. The measurement condition is VCC = 2.7 V to 5.5 V and Topr = -40 to 85°C (J version) / -40 to 125°C (K version).
2. Hold Vdet2 > Vdet1.
3. Time until the voltage monitor 2 interrupt request is generated after the voltage passes Vdet2.
4. Necessary time until the voltage detection circuit operates after setting to 1 again after setting the VCA27 bit in the VCA2
register to 0.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 51 of 67
R8C/28 Group, R8C/29 Group
Power-on Reset Circuit, Voltage Monitor 1 Reset Electrical Characteristics(3)
Table 5.41
Symbol
Vpor1
5. Electrical Characteristics
Parameter
Condition
Vpor2
Power-on reset valid voltage(4)
Power-on reset or voltage monitor 1 reset valid
voltage
trth
External power VCC rise gradient(2)
Min.
−
Standard
Typ.
−
Max.
0.1
0
−
Vdet1
V
20
−
−
mV/msec
Unit
V
NOTES:
1. The measurement condition is Topr = −40 to 85°C (N version) / −40 to 125°C (D version), unless otherwise specified.
2. This condition (external power VCC rise gradient) does not apply if VCC ≥ 1.0 V.
3. To use the power-on reset function, enable voltage monitor 1 reset by setting the LVD0ON bit in the OFS register to 0, the
VW0C0 and VW0C6 bits in the VW0C register to 1 respectively, and the VCA25 bit in the VCA2 register to 1.
4. tw(por1) indicates the duration the external power VCC must be held below the effective voltage (Vpor1) to enable a power on
reset. When turning on the power for the first time, maintain tw(por1) for 30 s or more if −20°C ≤ Topr ≤ 125°C, maintain tw(por1)
for 3,000 s or more if −40°C ≤ Topr < −20°C.
Vdet1(3)
Vdet1(3)
2.7V
trth
External
power VCC
trth
Vpor2
Vpor1
Sampling time(1, 2)
tw(por1)
Internal reset
signal
(“L” valid)
1
× 32
fOCO-S
1
× 32
fOCO-S
NOTES:
1. When using the voltage monitor 1 digital filter, ensure that the voltage is within the MCU operation voltage
range (2.7 V or above) during the sampling time.
2. The sampling clock can be selected. Refer to 6. Voltage Detection Circuit of Hardware Manual for details.
3. Vdet1 indicates the voltage detection level of the voltage detection 1 circuit. Refer to 6. Voltage Detection
Circuit of Hardware Manual for details.
Figure 5.22
Reset Circuit Electrical Characteristics
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 52 of 67
R8C/28 Group, R8C/29 Group
Table 5.42
High-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
fOCO40M
−
5. Electrical Characteristics
Parameter
High-speed on-chip oscillator frequency
temperature • supply voltage dependence
Value in FRA1 register after reset
Oscillation frequency adjustment unit of highspeed on-chip oscillator
Oscillation stability time
Self power consumption at oscillation
−
−
−
Condition
VCC = 4.75 V to 5.25 V
0°C ≤ Topr ≤ 60°C(2)
VCC = 3.0 V to 5.5 V
−20°C ≤ Topr ≤ 85°C(2)
VCC = 3.0 V to 5.5 V
−40°C ≤ Topr ≤ 85°C(2)
VCC = 3.0 V to 5.5 V
−40°C ≤ Topr ≤ 125°C(2)
VCC = 2.7 V to 5.5 V
−40°C ≤ Topr ≤ 125°C(2)
Adjust FRA1 register
(value after reset) to −1
Min.
39.2
Standard
Typ.
40
Max.
40.8
MHz
38.8
40
41.2
MHz
38.4
40
41.6
MHz
38
40
42
MHz
37.6
40
42.4
MHz
08h
−
−
+0.3
F7h
−
−
MHz
−
10
400
100
−
µA
VCC = 5.0 V, Topr = 25°C
−
Unit
µs
NOTES:
1. VCC = 2.7 to 5.5 V, Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. These standard values show when the FRA1 register value after reset is assumed.
Table 5.43
Low-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
fOCO-S
−
−
Parameter
Low-speed on-chip oscillator frequency
Oscillation stability time
Self power consumption at oscillation
Condition
VCC = 5.0 V, Topr = 25°C
Standard
Typ.
125
10
15
Min.
40
−
−
Max.
250
100
−
Unit
kHz
µs
µA
NOTE:
1. VCC = 2.7 to 5.5 V, Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
Table 5.44
Power Supply Circuit Timing Characteristics
Symbol
Parameter
td(P-R)
Time for internal power supply stabilization during
power-on(2)
td(R-S)
STOP exit time(3)
Condition
NOTES:
1. The measurement condition is VCC = 2.7 to 5.5 V and Topr = 25°C.
2. Waiting time until the internal power supply generation circuit stabilizes during power-on.
3. Time until system clock supply starts after the interrupt is acknowledged to exit stop mode.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 53 of 67
Min.
1
−
Standard
Typ.
Max.
−
2000
−
150
Unit
µs
µs
R8C/28 Group, R8C/29 Group
Table 5.45
Symbol
Timing Requirements of Clock Synchronous Serial I/O with Chip Select(1)
Parameter
tSUCYC
SSCK clock cycle time
tHI
tLO
tRISE
SSCK clock “H” width
SSCK clock “L” width
SSCK clock rising
time
tFALL
5. Electrical Characteristics
SSCK clock falling
time
Conditions
Standard
Typ.
−
−
Unit
Max.
−
−
−
−
−
−
−
100
1
−
1
−
−
tCYC(2)
µs
ns
−
−
tCYC(2)
Slave
1tCYC + 50
−
−
ns
Slave
1tCYC + 50
−
−
ns
−
−
1
−
−
−
−
1.5tCYC + 100
1.5tCYC + 100
tCYC(2)
ns
ns
Master
Slave
Master
Slave
SSO, SSI data input setup time
SSO, SSI data input hold time
tLEAD
SCS setup time
tOD
SCS hold time
SSO, SSI data output delay time
tSA
tOR
SSI slave access time
SSI slave out open time
−
0.6
0.6
1
1
1
NOTES:
1. VCC = 2.7 to 5.5 V, VSS = 0 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. 1tCYC = 1/f1(s)
Rev.1.10 May 17, 2007
REJ03B0169-0110
tCYC(2)
tSUCYC
tSUCYC
0.4
0.4
−
tSU
tH
tLAG
Min.
4
Page 54 of 67
tCYC(2)
µs
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
4-Wire Bus Communication Mode, Master, CPHS = 1
VIH or VOH
SCS (output)
VIH or VOH
tHI
tFALL
tRISE
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO
tSUCYC
SSO (output)
tOD
SSI (input)
tSU
tH
4-Wire Bus Communication Mode, Master, CPHS = 0
VIH or VOH
SCS (output)
VIH or VOH
tHI
tFALL
tRISE
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO
tSUCYC
SSO (output)
tOD
SSI (input)
tSU
tH
CPHS, CPOS: Bits in SSMR register
Figure 5.23
I/O Timing of Clock Synchronous Serial I/O with Chip Select (Master)
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 55 of 67
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
4-Wire Bus Communication Mode, Slave, CPHS = 1
VIH or VOH
SCS (input)
VIH or VOH
tLEAD
tHI
tFALL
tRISE
tLAG
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO
tSUCYC
SSO (input)
tSU
tH
SSI (output)
tSA
tOD
tOR
4-Wire Bus Communication Mode, Slave, CPHS = 0
VIH or VOH
SCS (input)
VIH or VOH
tHI
tLEAD
tFALL
tRISE
tLAG
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO
tSUCYC
SSO (input)
tSU
tH
SSI (output)
tSA
tOD
tOR
CPHS, CPOS: Bits in SSMR register
Figure 5.24
I/O Timing of Clock Synchronous Serial I/O with Chip Select (Slave)
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 56 of 67
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
tHI
VIH or VOH
SSCK
VIH or VOH
tLO
tSUCYC
SSO (output)
tOD
SSI (input)
tSU
Figure 5.25
tH
I/O Timing of Clock Synchronous Serial I/O with Chip Select (Clock Synchronous
Communication Mode)
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 57 of 67
R8C/28 Group, R8C/29 Group
Table 5.46
5. Electrical Characteristics
Timing Requirements of I2C bus Interface (1)
Symbol
Parameter
Condition
tSCL
SCL input cycle time
tSCLH
SCL input “H” width
tSCLL
SCL input “L” width
tsf
tSP
SCL, SDA input fall time
SCL, SDA input spike pulse rejection time
tBUF
Standard
Typ.
(2)
−
12tCYC + 600
(2)
−
3tCYC + 300
Min.
Unit
Max.
−
ns
−
ns
5tCYC + 500(2)
−
−
−
−
ns
−
300
−
SDA input bus-free time
5tCYC(2)
−
1tCYC(2)
−
ns
ns
tSTAH
Start condition input hold time
3tCYC(2)
−
−
ns
tSTAS
Retransmit start condition input setup time
3tCYC(2)
−
−
ns
tSTOP
Stop condition input setup time
3tCYC(2)
−
−
ns
tSDAS
Data input setup time
−
−
ns
tSDAH
Data input hold time
1tCYC + 20(2)
0
−
−
ns
NOTES:
1. VCC = 2.7 to 5.5 V, VSS = 0 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. 1tCYC = 1/f1(s)
VIH
SDA
VIL
tBUF
tSTAH
tSCLH
tSTAS
tSP
tSTOP
SCL
P(2)
S(1)
tsf
Sr(3)
tSCLL
tsr
tSCL
NOTES:
1. Start condition
2. Stop condition
3. Retransmit start condition
Figure 5.26
I/O Timing of I2C bus Interface
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 58 of 67
P(2)
tSDAS
tSDAH
ns
R8C/28 Group, R8C/29 Group
Table 5.47
Electrical Characteristics (1) [VCC = 5 V]
Symbol
VOH
Parameter
Output “H” voltage
Except XOUT
XOUT
VOL
Output “L” voltage
Except XOUT
XOUT
VT+-VT-
5. Electrical Characteristics
Hysteresis
Condition
IOH = -5 mA
IOH = -200 µA
Drive capacity HIGH
Drive capacity LOW
IOL = 5 mA
IOL = 200 µA
Drive capacity HIGH
Drive capacity LOW
INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, RXD1,
CLK0, SSI, SCL,
SDA, SSO
RESET
IIH
IIL
RPULLUP
RfXIN
VRAM
Input “H” current
Input “L” current
Pull-up resistance
Feedback
resistance
RAM hold voltage
VI = 5 V, VCC = 5V
VI = 0 V, VCC = 5V
VI = 0 V, VCC = 5V
XIN
During stop mode
IOH = -1 mA
IOH = -500 µA
IOL = 1 mA
IOL = 500 µA
Standard
Min.
Typ.
VCC − 2.0
−
VCC − 0.3
−
VCC − 2.0
−
VCC − 2.0
−
−
−
−
−
−
−
−
−
0.1
0.5
Max.
VCC
VCC
VCC
VCC
2.0
0.45
2.0
2.0
−
Unit
V
V
V
V
V
V
V
V
V
0.1
1.0
−
V
−
−
−
30
−
50
1.0
5.0
-5.0
167
−
µA
−
µA
kΩ
MΩ
2.0
−
−
V
NOTE:
1. VCC = 4.2 to 5.5 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), f(XIN) = 20 MHz, unless otherwise specified.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 59 of 67
R8C/28 Group, R8C/29 Group
Table 5.48
Symbol
ICC
5. Electrical Characteristics
Electrical Characteristics (2) [Vcc = 5 V]
(Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.)
Parameter
Condition
Power supply
High-speed
current
clock mode
(VCC = 3.3 to 5.5 V)
Single-chip mode,
output pins are
open, other pins
are VSS
High-speed
on-chip
oscillator mode
Low-speed
on-chip
oscillator mode
Wait mode
Stop mode
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 60 of 67
XIN = 20 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
Min.
−
Standard
Typ.
Max.
10
17
Unit
mA
XIN = 16 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
−
9
15
mA
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
−
6
−
mA
XIN = 20 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
−
5
−
mA
XIN = 16 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
−
4
−
mA
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
−
2.5
−
mA
XIN clock off
High-speed on-chip oscillator on fOCO = 20 MHz (J version)
Low-speed on-chip oscillator on = 125 kHz
No division
−
10
15
mA
XIN clock off
High-speed on-chip oscillator on fOCO = 20 MHz (J version)
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
−
4
−
mA
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
−
5.5
10
mA
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
−
2.5
−
mA
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR47 = 1
−
130
300
µA
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
−
25
75
µA
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
−
23
60
µA
XIN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
−
0.8
3.0
µA
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
−
1.2
−
µA
XIN clock off, Topr = 125°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
−
4.0
−
µA
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
Timing Requirements
(Unless Otherwise Specified: VCC = 5 V, VSS = 0 V at Topr = 25°C) [VCC = 5 V]
Table 5.49
XIN Input
Symbol
tc(XIN)
tWH(XIN)
tWL(XIN)
Standard
Min.
Max.
50
−
25
−
25
−
Parameter
XIN input cycle time
XIN input “H” width
XIN input “L” width
tC(XIN)
Unit
ns
ns
ns
VCC = 5 V
tWH(XIN)
XIN input
tWL(XIN)
Figure 5.27
Table 5.50
XIN Input Timing Diagram when VCC = 5 V
TRAIO Input
Symbol
tc(TRAIO)
tWH(TRAIO)
tWL(TRAIO)
Standard
Min.
Max.
100
−
40
−
40
−
Parameter
TRAIO input cycle time
TRAIO input “H” width
TRAIO input “L” width
tC(TRAIO)
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
Figure 5.28
TRAIO Input Timing Diagram when VCC = 5 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 61 of 67
Unit
ns
ns
ns
VCC = 5 V
R8C/28 Group, R8C/29 Group
Table 5.51
5. Electrical Characteristics
Serial Interface
Symbol
tc(CK)
tW(CKH)
tW(CKL)
td(C-Q)
th(C-Q)
tsu(D-C)
th(C-D)
Standard
Min.
Max.
200
−
100
−
100
−
−
50
0
−
50
−
90
−
Parameter
CLK0 input cycle time
CLK0 input “H” width
CLK0 input “L” width
TXDi output delay time
TXDi hold time
RXDi input setup time
RXDi input hold time
Unit
ns
ns
ns
ns
ns
ns
ns
i = 0 or 1
VCC = 5 V
tC(CK)
tW(CKH)
CLK0
tW(CKL)
th(C-Q)
TXDi
td(C-Q)
tsu(D-C)
th(C-D)
RXDi
i = 0 or 1
Figure 5.29
Table 5.52
Serial Interface Timing Diagram when VCC = 5 V
External Interrupt INTi (i = 0, 1, 3) Input
tW(INH)
INTi input “H” width
Standard
Min.
Max.
(1)
−
250
tW(INL)
INTi input “L” width
250(2)
Symbol
Parameter
−
Unit
ns
ns
NOTES:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
VCC = 5 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.30
External Interrupt INTi Input Timing Diagram when VCC = 5 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 62 of 67
R8C/28 Group, R8C/29 Group
Table 5.53
Electrical Characteristics (3) [VCC = 3 V]
Symbol
VOH
VOL
VT+-VT-
IIH
IIL
RPULLUP
RfXIN
VRAM
5. Electrical Characteristics
Parameter
Output “H” voltage
Except XOUT
XOUT
Output “L” voltage
Input “H” current
Input “L” current
Pull-up resistance
Feedback resistance
RAM hold voltage
Max.
VCC
VCC
IOH = -1 mA
Drive capacity
HIGH
Drive capacity
LOW
IOL = 1 mA
Drive capacity
HIGH
Drive capacity
LOW
IOH = -50 µA
VCC − 0.5
−
VCC
V
Unit
V
V
−
−
IOL = 0.1 mA
−
−
0.5
0.5
V
V
IOL = 50 µA
−
−
0.5
V
INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, RXD1,
CLK0, SSI, SCL,
SDA, SSO
0.1
0.3
−
V
RESET
0.1
0.4
−
V
−
−
−
66
−
2.0
160
3.0
−
4.0
-4.0
500
−
−
µA
−
Except XOUT
XOUT
Hysteresis
IOH = -0.1 mA
Standard
Min.
Typ.
VCC − 0.5
−
VCC − 0.5
−
Condition
VI = 3 V, VCC = 3V
VI = 0 V, VCC = 3V
VI = 0 V, VCC = 3V
XIN
During stop mode
µA
kΩ
MΩ
V
NOTE:
1. VCC =2.7 to 3.3 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), f(XIN) = 10 MHz, unless otherwise specified.
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 63 of 67
R8C/28 Group, R8C/29 Group
Table 5.54
Symbol
ICC
5. Electrical Characteristics
Electrical Characteristics (4) [Vcc = 3 V]
(Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.)
Parameter
Condition
Power supply current High-speed
(VCC = 2.7 to 3.3 V)
clock mode
Single-chip mode,
output pins are open,
other pins are VSS
High-speed
on-chip
oscillator
mode
Low-speed
on-chip
oscillator
mode
Wait mode
Stop mode
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 64 of 67
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR47 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
XIN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
XIN clock off, Topr = 125°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
Min.
−
Standard
Typ.
Max.
6
−
Unit
mA
−
2
−
mA
−
5
9
mA
−
2
−
mA
−
130
300
µA
−
25
70
µA
−
23
55
µA
−
0.7
3.0
µA
−
1.1
−
µA
−
3.8
−
µA
R8C/28 Group, R8C/29 Group
5. Electrical Characteristics
Timing requirements
(Unless Otherwise Specified: VCC = 3 V, VSS = 0 V at Topr = 25°C) [VCC = 3 V]
Table 5.55
XIN Input
Symbol
tc(XIN)
tWH(XIN)
tWL(XIN)
Standard
Min.
Max.
100
−
40
−
40
−
Parameter
XIN input cycle time
XIN input “H” width
XIN input “L” width
tC(XIN)
Unit
ns
ns
ns
VCC = 3 V
tWH(XIN)
XIN input
tWL(XIN)
Figure 5.31
XIN Input Timing Diagram when VCC = 3 V
Table 5.56
TRAIO Input
Symbol
tc(TRAIO)
tWH(TRAIO)
tWL(TRAIO)
Standard
Min.
Max.
300
−
120
−
120
−
Parameter
TRAIO input cycle time
TRAIO input “H” width
TRAIO input “L” width
tC(TRAIO)
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
Figure 5.32
TRAIO Input Timing Diagram when VCC = 3 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 65 of 67
Unit
ns
ns
ns
VCC = 3 V
R8C/28 Group, R8C/29 Group
Table 5.57
5. Electrical Characteristics
Serial Interface
Symbol
tc(CK)
tW(CKH)
tW(CKL)
td(C-Q)
th(C-Q)
tsu(D-C)
th(C-D)
Standard
Min.
Max.
300
−
150
−
150
−
−
80
0
−
70
−
90
−
Parameter
CLK0 input cycle time
CLK0 input “H” width
CLK0 Input “L” width
TXDi output delay time
TXDi hold time
RXDi input setup time
RXDi input hold time
Unit
ns
ns
ns
ns
ns
ns
ns
i = 0 or 1
VCC = 3 V
tC(CK)
tW(CKH)
CLK0
tW(CKL)
th(C-Q)
TXDi
td(C-Q)
tsu(D-C)
th(C-D)
RXDi
i = 0 or 1
Figure 5.33
Table 5.58
Serial Interface Timing Diagram when VCC = 3 V
External Interrupt INTi (i = 0, 1, 3) Input
tW(INH)
INTi input “H” width
Standard
Min.
Max.
(1)
−
380
tW(INL)
INTi input “L” width
380(2)
Symbol
Parameter
Unit
−
ns
ns
NOTES:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
VCC = 3 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.34
External Interrupt INTi Input Timing Diagram when VCC = 3 V
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 66 of 67
R8C/28 Group, R8C/29 Group
Package Dimensions
Package Dimensions
Diagrams showing the latest package dimensions and mounting information are available in the “Packages” section of
the Renesas Technology website.
JEITA Package Code
P-LSSOP20-4.4x6.5-0.65
RENESAS Code
PLSP0020JB-A
MASS[Typ.]
0.1g
11
*1
E
20
HE
Previous Code
20P2F-A
NOTE)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
F
1
Index mark
10
c
A1
Reference
Symbol
D
A
L
*2
A2
*3
e
y
bp
Detail F
D
E
A2
A
A1
bp
c
HE
e
y
L
Rev.1.10 May 17, 2007
REJ03B0169-0110
Page 67 of 67
Dimension in Millimeters
Min
6.4
4.3
Nom Max
6.5 6.6
4.4 4.5
1.15
1.45
0.1 0.2
0
0.17 0.22 0.32
0.13 0.15 0.2
0°
10°
6.2 6.4 6.6
0.53 0.65 0.77
0.10
0.3 0.5 0.7
REVISION HISTORY
REVISION HISTORY
Rev.
Date
0.10
Nov 14, 2005
0.30
Feb 28, 2006
R8C/28 Group, R8C/29 Group Datasheet
R8C/28 Group, R8C/29 Group Datasheet
Description
Page
−
Summary
First Edition issued
all pages “J, K version” added
1
1.1 Applications revised
2
Table 1.1 Functions and Specifications for R8C/28 Group revised
3
Table 1.2 Functions and Specifications for R8C/29 Group revised
4
Figure 1.1 Block Diagram; NOTE3 added
5
Table 1.3 Product Information for R8C/28 Group and Figure 1.2 Type
Number, Memory Size, and Package of R8C/28 Group revised
6
Table 1.4 Product Information for R8C/29 Group and Figure 1.3 Type
Number, Memory Size, and Package of R8C/29 Group revised
7
Figure 1.4 Pin Assignments (Top View); NOTE3 added
8
Table 1.5 Pin Functions revised
9
Table 1.6 Pin Name Information by Pin Number;
“XOUT” → “XOUT/XCOUT”, “XIN” → “XIN/XCIN” revised and
NOTE2 added
13
Figure 3.1 Memory Map of R8C/28 Group;
“R5F21284JSP, R5F21284KSP” added
14
Figure 3.2 Memory Map of R8C/29 Group;
“R5F21294JSP, R5F21294KSP” added
15
Table 4.1 SFR Information (1); NOTE6 added
18
Table 4.4 SFR Information (4);
00FEh: “DRR” → “P1DRR” symbol name revised
22 to 66 5. Electrical Characteristics added
0.40
0.50
1.00
Mar 29, 2006
Apr 27, 2006
Nov 08, 2006
2
Table 1.1 Functions and Specifications for R8C/28 Group revised
3
Table 1.2 Functions and Specifications for R8C/29 Group revised
15
Table 4.1 SFR Information (1);
- 0032h, 0036h, 0038h revised
- NOTES 2 to 6 revised and NOTES 7 to 8 added
19
Table 4.5 SFR Information (5); NOTE2 added
18
Table 4.4; 00FDh: revised
46
Table 5.35; System clock Conditions: revised
All pages “PRELIMINARY" deleted
1
1 “J and K versions are under development...notice.” added
2
Table 1.1 revised
3
Table 1.2 revised
4
Figure 1.1 revised
5
Table 1.3 revised
6
Table 1.4 revised
A-1
REVISION HISTORY
Rev.
Date
1.00
Nov 08, 2006
1.10
May 17, 2007
R8C/28 Group, R8C/29 Group Datasheet
Description
Page
Summary
15
Table 4.1;
• “0000h to 003Fh” → “0000h to 002Fh” revised
• 000Fh: “000XXXXXb” → “00X11111b” revised
• 001Ch: “00h” → “00h, 10000000b” revised
• 0029h: “High-Speed On-Chip Oscillator Control Register 4, FRA4,
When shipping” added
• 002Bh: “High-Speed On-Chip Oscillator Control Register 6, FRA6,
When shipping” added
• NOTE2 revised, NOTE3 added
16
Table 4.2; “0040h to 007Fh” → “0030h to 007Fh” revised
18
Table 4.4; 00E1h, 00E5h, 00E8h “XXh” → “00h” revised
22
Table 5.2 revised
23
Figure 5.1 figure titile revised
24
Table 5.4 revised
25
Table 5.5 revised
26
Figure 5.2 figure titile revised and Table 5.7 NOTE4 added
27
Table 5.9 revised, Figure 5.3 revised
28
Table 5.10, Table 5.11revised
34
Table 5.15 revised
35
Table 5.16 revised
36
Table 5.17 revised
39
Table 5.22 revised
40
Table 5.23 revised
44
Table 5.29 revised
47
5.2 "J and K versions are under development...notice." added
Table 5.34, Table 5.35 revised
48
Table 5.36 revised, Figure 5.20 figure title revised
51
Figure 5.21 figure title revised
52
Table 5.41, Figure 5.22 revised
53
Table 5.42, Table 5.43 revised
59
Table 5.47 revised
60
Table 5.48 revised
63
Table 5.53 revised
64
Table 5.54 revised
67
Package Dimensions; “Diagrams showing the latest...website.” added
2
Table 1.1 revised
3
Table 1.2 revised
5
Table 1.3 and Figure 1.2 revised
6
Table 1.4 and Figure 1.3 revised
7
Figure 1.4 NOTE4 added
A-2
REVISION HISTORY
Rev.
Date
1.10
May 17, 2007
R8C/28 Group, R8C/29 Group Datasheet
Description
Page
Summary
13
Figure 3.1 revised
14
Figure 3.2 revised
18
Table 4.4 NOTE2 added
28
Table 20.10 revised
51
Table 20.39 NOTE4 added
53
Table 20.42 revised
A-3
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Notes:
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