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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N03PUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP110N03PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP110N03PUG TO-263 (MP-25ZP) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 55 A) (TO-263) • Low Ciss: Ciss = 16400 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±110 A ID(pulse) ±440 A Total Power Dissipation (TA = 25°C) PT1 1.8 W Total Power Dissipation (TC = 25°C) PT2 288 W Channel Temperature Tch 175 °C Drain Current (pulse) Note1 Tstg −55 to +175 °C Repetitive Avalanche Current Note2 IAR 62 A Repetitive Avalanche Energy Note2 EAR 384 mJ Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.52 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16851EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan 2004 NP110N03PUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note Drain to Source On-state Resistance Note TEST CONDITIONS MIN. TYP. MAX. UNIT IDSS VDS = 30 V, VGS = 0 V 1 µA IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) VDS = VGS, ID = 250 µA 2.0 3.0 4.0 V | yfs | VDS = 10 V, ID = 55 A 42 86 RDS(on) VGS = 10 V, ID = 55 A S 1.1 1.5 mΩ Input Capacitance Ciss VDS = 25 V 16400 24600 pF Output Capacitance Coss VGS = 0 V 1900 2850 pF Reverse Transfer Capacitance Crss f = 1 MHz 1500 2700 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 55 A 60 140 ns VGS = 10 V 150 380 ns RG = 0 Ω 125 250 ns 32 80 ns 380 nC Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 24 V 253 Gate to Source Charge QGS VGS = 10 V 63 nC QGD ID = 110 A 94 nC VF(S-D) IF = 110 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 110 A, VGS = 0 V 68 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 96 nC Gate to Drain Charge Body Diode Forward Voltage Note 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet D16851EJ1V0DS td(on) ton tf toff NP110N03PUG TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 300 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 250 200 150 100 50 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) = 440 A 100 RDS(on) Limited (at VGS = 10 V) 10 DC 1 ms 10 ms 1 TC = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A PW = 100 µs ID(DC) = 110 A Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 0.52°C/W 1 0.1 0.01 Single pulse 0.001 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D16851EJ1V0DS 10 100 1000 3 NP110N03PUG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 500 1000 450 100 400 350 ID - Drain Current - A ID - Drain Current - A VDS = 10 V Pulsed Pulsed VGS = 10 V 300 250 200 150 100 TA = −55°C −25°C 25°C 85°C 125°C 150°C 175°C 10 1 0.1 0.01 50 0 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 3.5 3 2.5 2 1.5 VGS = VDS ID = 250 µA Pulsed 0 -100 -50 0 50 100 150 1000 VDS = 10 V Pulsed TA = −55°C 25°C 85°C 125°C 175°C 100 10 1 200 1 10 100 1000 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 5 Pulsed 4 3 2 VGS = 10 V 1 0 1 10 100 1000 3 Pulsed 2.5 ID = 110 A 55 A 22 A 2 1.5 1 0.5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ VGS(th) - Gate to Source Threshold Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 4 0.5 4 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 1 2 Data Sheet D16851EJ1V0DS 25 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 3 100000 VGS = 10 V ID = 55 A Pulsed 2.5 Ciss, Coss, Crss - Capacitance - pF 2 1.5 1 0.5 VGS = 0 V f = 1 MHz Ciss 10000 Coss Crss 1000 100 0 -75 -25 25 75 125 0.1 175 SWITCHING CHARACTERISTICS 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 50 VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C tr td(off) 100 td(on) tf 10 VDD = 15 V VGS = 10 V RG = 0 Ω 45 9 VDD = 24 V 15 V 40 8 7 35 30 6 VGS 25 5 20 4 15 3 10 2 VDS 5 1 ID = 110 A 1 10 100 1000 0 50 100 150 200 250 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1 0 300 0 0.1 100 100 V GS = 10 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ NP110N03PUG 0V 10 1 0.1 Pulsed 0.01 di/dt = 100 A/µs V GS = 0 V 10 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 1000 IF - Diode Forward Current - A Data Sheet D16851EJ1V0DS 5 NP110N03PUG PACKAGE DRAWING (Unit: mm) 10.0 ±0.3 1.35 ±0.3 TO-263 (MP-25ZP) 4.45 ±0.2 1.3 ±0.2 9.15 ±0.3 0.5 15.25 ±0.5 4 0.025 to 0.25 0.75 ±0.2 .2 0 to 8 ˚ 0.25 1 2 3 2.5 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 ±0.25 0.6 ±0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D16851EJ1V0DS NP110N03PUG • The information in this document is current as of September, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1