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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit: mm) The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES PART NUMBER μ PA2733GR-E1 μ PA2733GR-E1-A μ PA2733GR-E2 μ PA2733GR-E2-A 6.0 ±0.3 4 4.4 0.8 +0.10 –0.05 5.37 MAX. 0.15 0.05 MIN. ORDERING INFORMATION 1.44 1 1.8 MAX. • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) • Low Ciss: Ciss = 870 pF TYP. • Built-in gate protection diode • Small and surface mount package (Power SOP8) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M PACKAGE Power SOP8 Note EQUIVALENT CIRCUIT Power SOP8 Power SOP8 Note Drain Power SOP8 Note Pb-free (This product does not contain Pb in external electrode and other parts.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS −30 VGSS m20 Gate to Source Voltage (VDS = 0 V) m5 Drain Current (DC) ID(DC) Note1 Drain Current (pulse) m20 ID(pulse) Note2 Total Power Dissipation 1.1 PT1 Note2 Total Power Dissipation (PW = 10 sec) PT2 2.5 150 Channel Temperature Tch –55 to +150 Storage Temperature Tstg Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm V V A A W W °C °C Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17460EJ2V0DS00 (2nd edition) Date Published November 2005 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2005 μ PA2733GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −1 μA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 μA −2.5 V Gate Cut-off Voltage Forward Transfer Admittance VGS(off) VDS = −10 V, ID = −1 mA −1.0 | yfs | VDS = −10 V, ID = −2.5 A 2.5 RDS(on)1 VGS = −10 V, ID = −2.5 A 30 38 mΩ RDS(on)2 VGS = −4.5 V, ID = −2.5 A 39 53 mΩ Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = −10 V 870 pF Output Capacitance Coss VGS = 0 V 200 pF Reverse Transfer Capacitance Crss f = 1 MHz 150 pF Turn-on Delay Time td(on) VDD = −15 V, ID = −2.5 A Rise Time tr Turn-off Delay Time td(off) Fall Time 7.7 ns VGS = −10 V 9.5 ns RG = 10 Ω 108 ns 64 ns tf Total Gate Charge QG VDD = −24 V 18 nC Gate to Source Charge QGS VGS = −10 V 2.6 nC QGD ID = −5 A 5.8 nC VF(S-D) IF = 5 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 5 A, VGS = 0 V 98 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 93 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS(−) RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 μs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS(−) VGS(−) 0 IG = −2 mA tf toff Data Sheet G17460EJ2V0DS μ PA2733GR TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA -100 120 ID(pulse) -1 s m 10 0 μ s s s 40 10 10 = m 60 -10 ID(DC) m 80 PW 1 ID - Drain Current - A 100 RDS( on) Limited (at V GS = −10 V) 0 10 dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA s TA = 25°C -0.1 Single Pulse 20 Mounted on a galass epoxy board (1 inch × 1 inch × 0.8 mm) -0.01 -0.01 0 0 25 50 75 100 125 150 175 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TA - Ambient Temperature - °C rth(t) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 Rth(ch-A) = 114°C/W 10 1 Single pulse, TA = 25°C Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm) 0.1 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 1000 FORWARD TRANSFER CHARACTERISTICS -100 -25 -20 ID - Drain Current - A ID - Drain Current - A <R> V GS = −10 V -15 −4.5 V -10 -5 -10 Tch = 150°C 75°C 25°C −40°C -1 -0.1 V GS = −10 V Pulsed Pulsed 0 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 VDS - Drain to Source Voltage - V 0 -1 -2 -3 -4 VGS - Gate to Source Voltage - V Data Sheet G17460EJ2V0DS 3 μ PA2733GR FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2 -1.5 -1 -0.5 VDS = −10 V ID = −1 mA 0 RDS(on) - Drain to Source On-state Resistance - mΩ -50 0 50 100 150 10 Tch = 150°C 75°C 25°C −40°C 1 VDS = −10 V Pulsed 0.1 -0.01 -10 -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 60 −4.5 V 40 VGS = −10 V 20 Pulsed 0 -0.1 -1 -10 -100 80 60 40 20 Pulsed ID = −2.5 A 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 60 0000 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ -1 ID - Drain Current - A ID - Drain Current - A −4.5 V 40 VGS = −10 V 20 ID = −2.5 A Pulsed 0 -50 0 50 100 150 Ciss 1000 Coss 100 Crss VGS = 0 V f = 1 MHz 10 -0.1 Tch - Channel Temperature - °C 4 -0.1 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V -2.5 -1 -10 VDS - Drain to Source Voltage - V Data Sheet G17460EJ2V0DS -100 μ PA2733GR SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS -12 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 td (off) 100 tf tr 10 td (on) 1 -0.1 -1 VDD = −15 V VGS = −10 V RG = 10 Ω -10 -10 VDD = −24 V −15 V −6 V -8 -6 -4 -2 ID = −5 A 0 0 -100 10 15 20 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 10 trr - Reverse Recovery Time - ns 100 IF - Diode Forward Current - A 5 VGS = −10 V 0V 1 0.1 100 di/dt = −100 A/μs VGS = 0 V Pulsed 0.01 10 0 0.2 0.4 0.6 0.8 1 1.2 0.1 VF(S-D) - Source to Drain Voltage - V 1 10 100 IF - Diode Forward Current - A Data Sheet G17460EJ2V0DS 5 μ PA2733GR • The information in this document is current as of November, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. 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"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1