uPA2733GR DS - Renesas Electronics

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April 1st, 2010
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2733GR
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2733GR is P-channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and so on.
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
FEATURES
PART NUMBER
μ PA2733GR-E1
μ PA2733GR-E1-A
μ PA2733GR-E2
μ PA2733GR-E2-A
6.0 ±0.3
4
4.4
0.8
+0.10
–0.05
5.37 MAX.
0.15
0.05 MIN.
ORDERING INFORMATION
1.44
1
1.8 MAX.
• Low on-state resistance
RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A)
RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
• Low Ciss: Ciss = 870 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
PACKAGE
Power SOP8
Note
EQUIVALENT CIRCUIT
Power SOP8
Power SOP8
Note
Drain
Power SOP8
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
VGSS
m20
Gate to Source Voltage (VDS = 0 V)
m5
Drain Current (DC)
ID(DC)
Note1
Drain Current (pulse)
m20
ID(pulse)
Note2
Total Power Dissipation
1.1
PT1
Note2
Total Power Dissipation (PW = 10 sec)
PT2
2.5
150
Channel Temperature
Tch
–55 to +150
Storage Temperature
Tstg
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
V
V
A
A
W
W
°C
°C
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17460EJ2V0DS00 (2nd edition)
Date Published November 2005 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2005
μ PA2733GR
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V
−1
μA
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m10
μA
−2.5
V
Gate Cut-off Voltage
Forward Transfer Admittance
VGS(off)
VDS = −10 V, ID = −1 mA
−1.0
| yfs |
VDS = −10 V, ID = −2.5 A
2.5
RDS(on)1
VGS = −10 V, ID = −2.5 A
30
38
mΩ
RDS(on)2
VGS = −4.5 V, ID = −2.5 A
39
53
mΩ
Note
Drain to Source On-state Resistance
Note
S
Input Capacitance
Ciss
VDS = −10 V
870
pF
Output Capacitance
Coss
VGS = 0 V
200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
150
pF
Turn-on Delay Time
td(on)
VDD = −15 V, ID = −2.5 A
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
7.7
ns
VGS = −10 V
9.5
ns
RG = 10 Ω
108
ns
64
ns
tf
Total Gate Charge
QG
VDD = −24 V
18
nC
Gate to Source Charge
QGS
VGS = −10 V
2.6
nC
QGD
ID = −5 A
5.8
nC
VF(S-D)
IF = 5 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 5 A, VGS = 0 V
98
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
93
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS(−)
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 μs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
0
10%
10%
tr
td(off)
Wave Form
td(on)
ton
RL
50 Ω
VDD
90%
VDS(−)
VGS(−)
0
IG = −2 mA
tf
toff
Data Sheet G17460EJ2V0DS
μ PA2733GR
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD BIAS SAFE OPERATING AREA
-100
120
ID(pulse)
-1
s
m
10
0 μ
s
s
s
40
10
10
=
m
60
-10 ID(DC)
m
80
PW
1
ID - Drain Current - A
100
RDS( on) Limited (at V GS = −10 V)
0
10
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
s
TA = 25°C
-0.1 Single Pulse
20
Mounted on a galass epoxy board
(1 inch × 1 inch × 0.8 mm)
-0.01
-0.01
0
0
25
50
75
100
125
150
175
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - °C
rth(t) - Transient Thermal Resistance - °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 114°C/W
10
1
Single pulse, TA = 25°C
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm)
0.1
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
1000
FORWARD TRANSFER CHARACTERISTICS
-100
-25
-20
ID - Drain Current - A
ID - Drain Current - A
<R>
V GS = −10 V
-15
−4.5 V
-10
-5
-10
Tch = 150°C
75°C
25°C
−40°C
-1
-0.1
V GS = −10 V
Pulsed
Pulsed
0
-0.01
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
VDS - Drain to Source Voltage - V
0
-1
-2
-3
-4
VGS - Gate to Source Voltage - V
Data Sheet G17460EJ2V0DS
3
μ PA2733GR
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-2
-1.5
-1
-0.5
VDS = −10 V
ID = −1 mA
0
RDS(on) - Drain to Source On-state Resistance - mΩ
-50
0
50
100
150
10
Tch = 150°C
75°C
25°C
−40°C
1
VDS = −10 V
Pulsed
0.1
-0.01
-10
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
60
−4.5 V
40
VGS = −10 V
20
Pulsed
0
-0.1
-1
-10
-100
80
60
40
20
Pulsed
ID = −2.5 A
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
60
0000
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
-1
ID - Drain Current - A
ID - Drain Current - A
−4.5 V
40
VGS = −10 V
20
ID = −2.5 A
Pulsed
0
-50
0
50
100
150
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
Tch - Channel Temperature - °C
4
-0.1
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(off) - Gate Cut-off Voltage - V
-2.5
-1
-10
VDS - Drain to Source Voltage - V
Data Sheet G17460EJ2V0DS
-100
μ PA2733GR
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
-12
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1000
td (off)
100
tf
tr
10
td (on)
1
-0.1
-1
VDD = −15 V
VGS = −10 V
RG = 10 Ω
-10
-10
VDD = −24 V
−15 V
−6 V
-8
-6
-4
-2
ID = −5 A
0
0
-100
10
15
20
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
10
trr - Reverse Recovery Time - ns
100
IF - Diode Forward Current - A
5
VGS = −10 V
0V
1
0.1
100
di/dt = −100 A/μs
VGS = 0 V
Pulsed
0.01
10
0
0.2
0.4
0.6
0.8
1
1.2
0.1
VF(S-D) - Source to Drain Voltage - V
1
10
100
IF - Diode Forward Current - A
Data Sheet G17460EJ2V0DS
5
μ PA2733GR
• The information in this document is current as of November, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1