2SK3230 DS - Renesas Electronics

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
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“Standard”:
8.
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12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3230 is suitable for converter of ECM.
0.1 +0.1
–0.05
0.3 ± 0.05
FEATURES
• Compact package
G
0.8 ± 0.1
1.6 ± 0.1
• High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
S
D
• Includes diode and high resistance at G - S
1.0
1.6 ± 0.1
PART NUMBER
PACKAGE
2SK3230
SC-89 (TUSM)
0.5 ± 0.05
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Note1
0.2 +0.1
–0
VDSX
20
V
VGDO
–20
V
ID
10
mA
IG
10
mA
PT
200
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
–55 to +125
°C
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Note2
EQUIVALENT CIRCUIT
Drain
Gate
Source
Notes 1. VGS = –1.0 V
2
2. Mounted on ceramic substrate of 3.0 cm x 0.64 mm
Remark
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15942EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002
2SK3230
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
Zero Gate Voltage Drain Cut-off Current
TEST CONDITIONS
IDSS
MIN.
VDS = 5.0 V, VGS = 0 V
TYP.
MAX.
UNIT
40
600
µA
−1.0
V
Gate Cut-off Voltage
VGS(off)
VDS = 5.0 V, ID = 1.0 µA
−0.1
Forward Transfer Admittance
| yfs1 |
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz
350
µS
Forward Transfer Admittance
| yfs2 |
VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz
350
µS
Input Capacitance
Ciss
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz
7.0
8.0
pF
Noise Voltage
NV
See Test Circuit
1.8
3.0
µV
IDSS RANK
MARKING
J2
J3
J4
J5
J6
J7
40 to 70
60 to 110
90 to 180
150 to 300
200 to 450
300 to 600
IDSS
(µA)
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
R = 1 kΩ
JIS A
NV (r.m.s)
C = 10 pF
2
Data Sheet D15942EJ1V0DS
2SK3230
TYPICAL CHARACTERISTICS (TA = 25°C)
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
DERATING FACTOR OF
POWER DISSIPATION
IG - Gate Current - µ A
dT - Derating Factor - %
30
100
80
60
40
20
10
−1.0 −0.8 −0.6 −0.4 −0.2
−30
−40
0
20
40
60
80
100
120 140 160
VGS - Gate to Source Voltage - V
TA - Ambient Temperature - ˚C
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
CiSS - Input Capacitance - pF
IDS IDSS =
S
= 2 30 0 µ
=1
0
00 µ 0 µ A A
A
0.8
0.6
S
0.4
IDS
ID - Drain Current - mA
100
VDS = 0 V
f = 1.0 MHz
VDS = 5 V
0.2
−0.6
−0.4
−0.2
0
50
20
10
5
2
1
1
+0.2
2
5
10
20
50
100
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
VGS (off) - Gate to Source Cut-off Voltage - V
|yfs| - Forward Transfer Admittance - µ S
0.2 0.4 0.6 0.8 1.0
−20
20
1.0
0
−10
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
10.0
VDS = 5 V
5.0
2.0
|yfs|
1.0
0.5
0.2
VGS (off)
0.1
0.05
0.02
0.01
10
20
50
100
200
500
1000
Zero-Gate Voltage Drain Current - µ A
Data Sheet D15942EJ1V0DS
3
2SK3230
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J2
ID - Drain Current - µA
0.10 V
150
0.05 V
100
VGS = 0 V
50
−0.15 V
−0.05 V
−0.10 V
0
2
4
6
2
6
8
0.10 V
300
0.05 V
ID - Drain Current - µA
400
−0.15 V
4
6
8
0.15 V
VGS = 0 V
200
−0.05 V
100
0
2
10
−0.10 V
0
2
4
−0.15 V
6
8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J6
0.15 V
0.05 V
420
VGS = 0 V
280
−0.05 V
−0.10 V
−0.15 V
140
2
4
6
10
RANK: J7
900
0.10 V
560
10
RANK: J5
0.15 V
0.10 V
720
0.05 V
540
VGS = 0 V
−0.05 V
360
−0.10 V
180
−0.15 V
8
10
0
0
VDS - Drain to Source Voltage - V
4
4
0.10 V
−0.10 V
ID - Drain Current - µA
0
500
−0.05 V
0
−0.15 V
−0.05 V
−0.10 V
0.15 V
VGS = 0 V
700
VGS = 0 V
60
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.05 V
0
0.05 V
120
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
0
0.10 V
180
VDS - Drain to Source Voltage - V
240
160
240
0
10
0.15 V
VDS - Drain to Source Voltage - V
320
0
8
RANK: J4
400
RANK: J3
300
200
0
ID - Drain Current - µA
0.15 V
ID - Drain Current - µA
ID - Drain Current - µA
250
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
2
4
6
8
VDS - Drain to Source Voltage - V
Data Sheet D15942EJ1V0DS
10
2SK3230
[MEMO]
Data Sheet D15942EJ1V0DS
5
2SK3230
[MEMO]
6
Data Sheet D15942EJ1V0DS
2SK3230
[MEMO]
Data Sheet D15942EJ1V0DS
7
2SK3230
• The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4