To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 ±0.1 FEATURES • Can be driven by a 2.5 V power source • Low gate cut-off voltage 2 3 0.3 +0.1 −0 2.0 ±0.2 suitable for use as a high-speed switching device in digital circuits. 1.25 ±0.1 0.65 The 2SJ463A has excellent switching characteristics, and is 0.65 0.3 +0.1 −0 by a 2.5 V power source. 1 Marking PACKAGE 2SJ463A SC-70 (SSP) 0.9 ±0.1 PART NUMBER 0.15 +0.1 −0.05 0.3 ORDERING INFORMATION 0 to 0.1 Marking: H21 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) ID(DC) m0.1 A ID(pulse) m0.4 A Total Power Dissipation PT 150 mW Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note EQUIVALENT CIRCUIT Drain Gate Protection Diode Note PW ≤ 10 µs, Duty Cycle ≤ 1% Body Diode Gate Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D11198EJ2V0DS00 (2nd edition) Date Published April 2005 NS CP(K) Printed in Japan The mark shows major revised points. 1996 2SJ463A ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −1 µA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 µA VGS(off) VDS = −3 V, ID = −10 µA −1.0 −1.7 V | yfs | VDS = −3 V, ID = −10 mA 20 RDS(on)1 VGS = −2.5 V, ID = −1 mA 23 60 Ω RDS(on)2 VGS = −4 V, ID = −10 mA 11 23 Ω RDS(on)3 VGS = −10 V, ID = −10 mA 6 13 Ω Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance −1.4 mS Input Capacitance Ciss VDS = −3 V 5 pF Output Capacitance Coss VGS = 0 V 15 pF Reverse Transfer Capacitance Crss f = 1 MHz 1.3 pF Turn-on Delay Time td(on) VDD = −3 V, ID = −10 mA 140 ns VGS = −4 V 330 ns RG = 10 Ω, RL = 300 Ω 220 ns 320 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf TEST CIRCUIT SWITCHING TIME D.U.T. RL RG PG. VGS(−) VGS Wave Form 0 90% VDD 90% ID(−) 90% ID VGS(−) 0 ID 0 10% 10% Wave Form τ τ = 1 µs Duty Cycle ≤ 1% 2 VGS 10% td(on) tr ton td(off) tf toff Data Sheet D11198EJ2V0DS 2SJ463A TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 240 −100 200 −80 ID - Drain Current - mA PT - Total Power Dissipation - mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 160 120 80 40 25 50 75 100 125 150 VGS = −6 V −60 VGS = −4 V VGS = −3 V −40 −20 VGS = −2.5 V 0 0 0 0 VGS = −10 V 175 −1 −2 −3 −4 VDS - Drain to Source Voltage - V TA - Ambient Temperature - ˚C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - mA I yfs I - Forward Transfer Admittance - mS TRANSFER CHARACTERISTICS −100 VDS = −3 V −10 TA = 125˚C −1 TA = 75˚C TA = 25˚C TA = −25˚C −0.1 −0.01 −0.001 0 −0.8 −1.6 −2.4 −3.2 1000 VDS = −3 V 100 TA = −25˚C TA = 25˚C 10 TA = 75˚C TA = 125˚C 1 −0.1 −4.0 −1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −2.5 V 50 40 TA = 125˚C TA = 75˚C 30 20 TA = 25˚C 10 0 −0.1 TA = –25˚C −1 −10 −100 ID - Drain Current - mA −10 −100 −1000 ID - Drain Current - mA −1000 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω VGS - Gate to Source Voltage - V 60 −5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = −4 V 50 40 30 TA = 125˚C TA = 75˚C 20 10 0 TA = 25˚C TA = −25˚C −0.1 Data Sheet D11198EJ2V0DS −1 −10 −100 ID - Drain Current - mA −1000 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = −10 V 50 40 30 20 TA = 75˚C TA = 25˚C TA = −25˚C TA = 125˚C 10 0 −0.1 −1 −10 −100 ID - Drain Current - mA −1000 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-Stage Resistance - Ω 2SJ463A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 60 50 ID = −1 mA 40 ID = −10 mA 30 ID = −100 mA 20 10 0 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz Coss 10 Ciss Crss 1 −1 −10 VDS - Drain to Source Voltage - V −100 tr tf td(on) 100 td(off) VDD = −3 V VGS = −4 V 10 RG = 10 Ω −10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ID - Reverse Drain Current - mA −1000 −100 −10 −1 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 VSD - Source to Drain Voltage - V 4 −10 1000 td(on),tr,td(off),tf - Switching Time - ns Ciss,Coss,Crss - Capacitance - pF 100 −2 −4 −6 −8 VGS - Gate to Source Voltage - V Data Sheet D11198EJ2V0DS −100 ID - Drain Current - mA −1000 2SJ463A • The information in this document is current as of April, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1