2SK3814 DS - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3814 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
PART NUMBER
PACKAGE
2SK3814
TO-251 (MP-3)
2SK3814-Z
TO-252 (MP-3Z)
FEATURES
• Super low on-state resistance
(TO-251)
RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
• Low C iss: C iss = 5450 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±60
A
ID(pulse)
±240
A
Total Power Dissipation (TC = 25°C)
PT1
84
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Tstg
−55 to +150
°C
EAS
102
mJ
IAR
32
A
EAR
102
mJ
(TO-252)
Drain Current (pulse)
Note1
Storage Temperature
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
Note3
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16740EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004
2SK3814
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
| yfs |
VDS = 10 V, ID = 30 A
22
44
RDS(on)1
VGS = 10 V, ID = 30 A
7.0
8.7
mΩ
RDS(on)2
VGS = 4.5 V, ID = 30 A
7.9
10.5
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
Input Capacitance
Ciss
VDS = 10 V
5450
pF
Output Capacitance
Coss
VGS = 0 V
550
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
350
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 30 A
23
ns
VGS = 10 V
8.5
ns
RG = 0 Ω
85
ns
7.7
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 48 V
95
nC
Gate to Source Charge
QGS
VGS = 10 V
17
nC
QGD
ID = 60 A
26
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
VF(S-D)
IF = 60 A, VGS = 0 V
0.95
Reverse Recovery Time
trr
IF = 60 A, VGS = 0 V
36
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
40
nC
1.5
V
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
RL
VDD
Data Sheet D16740EJ2V0DS
td(on)
ton
tf
toff
2SK3814
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
100 μs
10 ms
ID(DC) = 60 A
10
1 ms
Power Dissipation Limited
DC
TC = 25°C
Single pulse
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(pulse) = 240 A
RDS(on) Limited
(at VGS = 10 V)
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 1.49°C/W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16740EJ2V0DS
3
2SK3814
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
300
1000
VGS = 10 V
ID - Drain Current - A
ID - Drain Current - A
250
200
4.5 V
150
100
100
Tch = −55°C
25°C
75°C
125°C
150°C
10
1
0.1
50
VDS = 10 V
Pulsed
Pulsed
0
0.01
0
1
2
3
4
5
6
0
1
VDS - Drain to Source Voltage - V
3
2.5
2
1.5
1
0.5
0
25
75
125
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V
ID = 1 mA
-25
VDS = 10 V
Pulsed
10
Tch = −55°C
25°C
75°C
125°C
150°C
1
0.1
0.1
175
15
VGS = 4.5 V
10 V
Pulsed
0
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
20
1
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
16
14
12
10
ID - Drain Current - A
4
1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
5
100
Tch - Channel Temperature - °C
10
4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
-75
3
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.5
2
8
6
4
ID = 30 A
Pulsed
2
0
0
5
10
15
VGS - Gate to Source Voltage - V
Data Sheet D16740EJ2V0DS
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20
100000
15
VGS = 4.5 V
10 V
5
ID = 30 A
Pulsed
10000
1000
-25
25
75
125
10
0.01
175
0.1
1
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
12
60
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
Crss
VGS = 0 V
f = 1 MHz
Tch - Channel Temperature - °C
td(off)
100
tf
td(on)
tr
10
ID = 60 A
10
50
VDD = 48 V
30 V
12 V
40
8
6
30
VGS
4
20
10
2
VDS
0
1
0.1
1
10
0
100
20
40
60
80
0
100
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
trr - Reverse Recovery Time - ns
1000
IF - Diode Forward Current - A
Coss
100
0
-75
Ciss
VGS - Gate to Source Voltage - V
10
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
2SK3814
100
VGS = 10 V
10
0V
1
0.1
100
10
di/dt = 100 A/μs
VGS = 0
Pulsed
1
0.01
0
0.5
1
1.5
0.1
1
10
100
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet D16740EJ2V0DS
5
2SK3814
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
IAS = 32 A
EAS = 102 mJ
10
VDD = 30 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25°C
1
1μ
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
80
60
40
20
0
10 μ
100 μ
1m
10 m
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - H
6
VDD = 30 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 32 A
Data Sheet D16740EJ2V0DS
2SK3814
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
<R> 2) TO-252 (MP-3Z)
1.1±0.2
4
5.5 ±0.2
3
13.7 MIN.
2
7.0 MIN.
1
5.5±0.2
1.6±0.2
4
1 2 3
+0.2
Note
2.3 ±0.2
0.5 ±0.1
Note
1.0 ±0.5
0.4 MIN.
0.5 TYP.
2.5 ±0.5
4.4 ±0.2
1.5 −0.1
5.0 ±0.2
0.5±0.1
5.6 ±0.3
+0.2
6.5 ±0.2
9.5 ±0.5
5.0±0.2
2.3±0.2
1.5-0.1
6.5±0.2
0.5 ±0.1
0.5 ±0.1
2.3 ±0.3
+0.2
0.5-0.1
+0.2
0.5-0.1
0.75
2.3 2.3
2.3 ±0.3
0.15 ±0.15
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Data Sheet D16740EJ2V0DS
7
2SK3814
• The information in this document is current as of August, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1