42-DL211B Version Issue Date File Name Total Pages : A.007 : 2008/01/23 : SP-DL211B-A.007.doc :6 Optical Fiber Transmitting IC 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park, Hsin-Chu, Taiwan 300, R.O.C. Tel：886-3-5645656 Fax：886-3-5645626 點晶科技股份有限公司 42-DL211B SILICON TOUCH TECHNOLOGY INC. 42-DL211B OPTICAL FIBER TRANSMITTING IC GENERAL DESCRIPTION 42-DL211B is a driver IC designed for the application of high-speed optical fiber transmission. It integrates the LED driver with constant current output to reduce the complexity and the cost of the transmission module. 42-DL211B can transmit with the speed up to 25Mb/s. 42-DL211B are fabricated by using CMOS technology with low power consumption purpose. FEATURES 1. TTL interface compatible 2. High speed (up to 25Mb/s) 3. Uniform output waveform 4. Constant current output 5. Low power consumption 6. Wide range for Supply Voltage (2.7V-5.5V) BLOCK DIAGRAM And APPLICATION CIRCUIT Power 42-DL211B OUT VDD Signal IN VSS Ground SP-DL211B-A.007 -1- Version：A.007 點晶科技股份有限公司 42-DL211B SILICON TOUCH TECHNOLOGY INC. ABSOLUTE MAXIMUM RATINGS Item Symbol Rating Unit Supply Voltage VDD -0.5 to +7 V Input Voltage VIN -0.5 to VDD +0.5 V Operating Temperature Topr -40 to +85 ℃ Storage Temperature Tstg -55 to +100 ℃ Electrostatic Damage ESD 6.5 kV Output Sinking Current IOUT 50 mA RECOMMENDED OPERATING CONDITIONS ITEM SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VDD 2.7 - 5.5 V High Level Input Voltage VIH 2.0 - VDD V Low Level Input Voltage VIL 0 - 0.8 V ELECTRICAL CHARACTERISTICS (VDD=5.0V, TA=25℃, if not mentioned ) ITEM SYMBOL High Level Input Voltage Low Level Input Voltage VIH VIL VDD= 3V or 5V VDD= 3V or 5V 2.0 0 - VDD 0.8 V V Input Leakage Current IIN VIN=VDD or VSS - - 10 uA VIN = VDD or VSS VDD=3V or 5V, VIN=VDD, VFLED=2.0V VDD=3V or 5V, VOUT=3V, VIN=VSS VDD=3V, CLED=15pF, VFLED=2.0V VDD=3 V, CLED=15pF, VFLED=2.0V CLED=15pF, VFLED=2.0V CLED=15pF, VFLED=2.0V NRZ Code, CLED=15pF, VFLED=2.0V - 4.0 - mA 2.4 3.0 3.6 mA - - 5 uA - - 40 ns - - 10 ns - 10 0 10 ns 1 25 ns - - 25 Mb/s 50 - - KΩ Quiescent Supply Current IDDQ Output Sinking Current *Note1 IOUT_ON Output Leakage Current IOUT_OFF Propagation Delay TPLH , TPHL Rise Time, Fall Time of IOUT Tr, Tf Pulse Width Distortion Δtw Jitter of Output Current Δtj Data Rate FDATA Input Resistance*Note2 RIN CONDITIONS multimeter MIN. TYP. MAX. UNIT Note1：IOUT = IOUT_OFF when Vin=high, VDD=floating. Note2：Typical value may be different due to different multimeters. SP-DL211B-A.007 -2- Version：A.007 點晶科技股份有限公司 42-DL211B SILICON TOUCH TECHNOLOGY INC. PAD DESCRIPTIONS PAD NO. PAD NAME DESCRIPTIONS 1 2 3 4 IN VDD OUT VSS Input Pad(High Active) Supply Voltage Output Pad Sinking Current(Active Low) Ground DIE CONFIGURATION (387.1, 422.5) 1. 2. VDD IN Center (248.9, 336.5) Center (66, 273.7) Center (321.2, 66) 3. OUT 4. VSS Center (76.2, 73.7) Unit：um (0, 0) Die Size: 387.1um * 422.5um Die Thickness: 15mil(=381um) Pad Size: 90um * 90um * Note: SiTI reserves the right to improve the device geometry and manufacturing processes without prior notice. Though these improvements may result in slight geometry changes, they will not affect die electrical characteristics and pad layouts. SP-DL211B-A.007 -3- Version：A.007 點晶科技股份有限公司 42-DL211B SILICON TOUCH TECHNOLOGY INC. REQUIREMENTS FOR WAFER DELIVERY Material： Silicon with P-Substrate Diameter： 6 inches(≒15cm) Thickness： 15 mils(≒381um) Malfunctioned die：Marked with red ink or equivalent marking HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION (1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during moving, storing and processing 42-DL211B. (2) Process 42-DL211B in a clean room with proper temperature and humidity. (3) Ground all working machines and workers wear anti-electrostatic ring to ground during processing. (4) Avoid contact 42-DL211Bwith bare hands .If unavoided, wear anti-electrostatic ring and use anti-electrostatic tool to pick it up. GUARANTED TEMPERATURE AND RETENTION CYCLE (1) The device/wafer 42-DL211B should be stored in the nitrogenous chest. The conditions suggested are as follows: Temperature = 23±3℃ Relative Humidity = 50±10% Minimum nitrogen inflow = 3 liters/minute (2) If the device/wafer, 42-DL211B is incidentally exposed to the air, use it for manufacturing as soon as possible. (3) Under the storage environment specified in item (1), six-month safe storage period is guaranteed. SP-DL211B-A.007 -4- Version：A.007 點晶科技股份有限公司 42-DL211B SILICON TOUCH TECHNOLOGY INC. The products listed herein are designed for ordinary electronic applications, such as electrical appliances, audio-visual equipment, communications devices and so on. Hence, it is advisable that the devices should not be used in medical instruments, surgical implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention equipment and the like. Misusing those products may directly or indirectly endanger human life, or cause injury and property loss. Silicon Touch Technology, Inc. will not take any responsibilities regarding the misusage of the products mentioned above. Anyone who purchases any products described herein with the above-mentioned intention or with such misused applications should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its distributors and all their officers and employees shall defend jointly and severally against any and all claims and litigation and all damages, cost and expenses associated with such intention and manipulation. SP-DL211B-A.007 -5- Version：A.007