42-DL313 Version : A.004 Issue Date : 2004/06/17 File Name : SP-DL313-A.004.doc Total Pages : 6 Optical Fiber Receiving IC 新竹市展業一路九號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 42-DL313 9-7F-1, Prosperity Road I, Hsin-Chu, Taiwan, R.O.C. Tel：886-3-5645656 Fax：886-3-5645626 點晶科技股份有限公司 42-DL313 SILICON TOUCH TECHNOLOGY INC. OPTICAL FIBER RECEIVING IC GENERAL DESCRIPTION 42-DL313 receiver is designed for the application of high-speed optical fiber transmission. As an OEIC, 42-DL313 integrates photo sensor, ATC (Automatic Threshold Control) and signal processing circuit for high-speed application, and is fabricated by using CMOS technology. 42-DL313 is designed to operate by positive logic in which the output voltage is set to high level when optical flux is received. FEATURES 1. Low jitter (Δtj: Typical 1ns) 2. High speed (Up to 13.2Mb/s, NRZ signal) 3. Built-in photo sensor and signal processing circuit. 4. Built-in ATC (Automatic Threshold Control) circuit used for stabilized output at a wide range of optical power level BLOCK DIAGRAM And APPLICATION CIRCUIT VDD VDD 42-DL313 AVDD AMP DVDD COMP OUT ATC AVSS 42-DL313-A.004 DVSS -1- Version：A.004 點晶科技股份有限公司 42-DL313 SILICON TOUCH TECHNOLOGY INC. ABSOLUTE MAXIMUM RATINGS (Ta=25℃ ℃) Item Supply Voltage Power dissipation Operating Temperature Storage Temperature High Level Output Current Low Level Output Current Symbol VDD P Topr Tstg IOH IOL Rating -0.5 to +7 100 -40 to +90 -55 to +100 -1 20 Unit V mW ℃ ℃ mA mA RECOMMENDED OPERATING CONDITIONS ITEM SYMBOL Supply Voltage VDD Operating Temperature High Level Output Current Low Level Output Current Topr IOH IOL MIN 2.7 4.75 -40 TYP 3.0 5.0 25 MAX 3.6 5.25 90 -150 1.6 UNIT V V ℃ uA mA ELECTRICAL CHARACTERISTICS ITEM Peak sensitivity wavelength Maximum Input Optical Power for High level Minimum Input Optical Power for High level Current Consumption High Level Output Voltage Low Level Output Voltage SYMBOL CONDITIONS λP Room temperature (25℃ ℃) PC,MAX PC,MIN IDD VOH IOH = -0.15mA VOL IOL = -1.6mA Rise Time Tr Fall Time Tf Pulse Width Distortion (note.1) Δtw Jitter Δt j Data Rate Input optical wavelength = 650nm VDD = 3V, Input optical wavelength = 650nm, VDD = 5V, Input optical wavelength = 650nm, VDD=3V, no input VDD=5V, no input FDATA VDD = 3V, CL = 10pF VDD = 5V, CL = 10pF VDD = 3V, CL = 10pF VDD = 5V, CL = 10pF Pulse frequency = 6.6MHz CL = 10pF PC = -17.5dBm PC = -27dBm, VDD = 3V NRZ Code, Duty = 50% MIN. TYP. MAX 700 UNIT nm -17.5 dBm -27 dBm -24.5 2 3 mA 2.4 VDD V 0 0.4 V 7.5 5 7.5 5 -7.5 7.5 1 3 0.1 10 6 10 6 5 10 13.2 ns ns ns ns Mb/s Note.1 Between input of an optical fiber transmitting module and output of 42-DL313. 42-DL313-A.004 -2- Version：A.004 點晶科技股份有限公司 42-DL313 SILICON TOUCH TECHNOLOGY INC. PAD DESCRIPTIONS Pad Name VDD_A VDD_D VSS_A VSS_D OUT Size (μ μm) 100×100 100×100 100×100 100×100 100×100 Center Coordinate (μ μm) (84.7, 75.0) (84.7, 743.15) (443.4, 87.4) (659.4, 87.4) (938.1, 87.4) I/O Power Power Ground Ground Output Description Analog Power Digital Power Analog Ground Digital Ground TTL Output DIE CONFIGURATION (inμ μm) (1048.6, 816.85) VDD_D PHOTODIODE (719.0, 492.0) VDD_A VSS_A VSS_D OUT (0.0) Die Size: 1048.6um×816.85um PD Size: 250000um2×1 The Center Coordinates of PD: (719.0um, 492.0um) * Note: SiTI reserves the right to alter the device geometry and manufacturing processes without prior notice. Though these alterations may result in geometrical changes, they will not affect die electrical characteristics and pad layouts in any sense. 42-DL313-A.004 -3- Version：A.004 點晶科技股份有限公司 42-DL313 SILICON TOUCH TECHNOLOGY INC. REQUIREMENTS FOR WAFER DELIVERY Material： Silicon with P-Substrate Diameter： 6 inches(≒15cm) Thickness： 12 mils(≒300um) Scribe Line Width： 110um Malfunctioned die：Marked with red ink or equivalent marking HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION (1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during moving, storing and processing 42-DL313. (2) Process 42-DL313 in a clean room with proper temperature and humidity. (3) Ground all working machines and workers wear anti-electrostatic ring to ground during processing. (4) Avoid contact 42-DL313 with bare hands .If unavoided, wear anti-electrostatic ring and use anti-electrostatic tool to pick it up. GUARANTED TEMPERATURE AND RETENTION CYCLE (1) The device/wafer 42-DL313 should be stored in the nitrogenous chest. The conditions suggested are as follows: Temperature = 23±3℃ Relative Humidity = 50±10% Minimum nitrogen inflow = 3 liters/minute (2) If the device/wafer, 42-DL313 is incidentally exposed to the air, use it for manufacturing as soon as possible. (3) Under the storage environment specified in item (1), six-month safe storage period is guaranteed. 42-DL313-A.004 -4- Version：A.004 點晶科技股份有限公司 42-DL313 SILICON TOUCH TECHNOLOGY INC. The products listed herein are designed for ordinary electronic applications, such as electrical appliances, audio-visual equipment, communications devices and so on. Hence, it is advisable that the devices should not be used in medical instruments, surgical implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention equipment and the like. Misusing those products may directly or indirectly endanger human life, or cause injury and property loss. Silicon Touch Technology, Inc. will not take any responsibilities regarding the misusage of the products mentioned above. Anyone who purchases any products described herein with the above-mentioned intention or with such misused applications should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its distributors and all their officers and employees shall defend jointly and severally against any and all claims and litigation and all damages, cost and expenses associated with such intention and manipulation. 42-DL313-A.004 -5- Version：A.004