RF5601 RF5601 4.9GHz to 5.85GHz Low Noise Amplifier with Bypass The RF5601 is a high performance Low Noise Amplifier designed for 802.11a/n/ac applications and other portable consumer electronics. The small form factor and high level of integration (input and output match, internal DC blocking capacitors) reduces the number of external components keeping cost down and minimizing layout area for implementation. The RF5601 is featured in a 2.2mm x 2.2mm x 0.5mm 8-pin QFN package. Package: QFN, 8-pin, 2.2mm x 2.2mm x 0.5mm Features ■ Single Supply Voltage 2.3V to 4.8V ■ 1.8 dB Noise Figure ■ 12 dB Typical Gain ■ 5dB IL in Bypass Mode Applications N/C VDD 8 7 RF IN 1 6 N/C LNA_EN 2 5 RF OUT 3 ■ 802.11a/n/ac WiFi Applications ■ Consumer Electronics ■ Mobile Devices ■ Gaming ■ General Purpose 5GHz LNA 4 N/C BYP_EN Functional Block Diagram Ordering Information RF5601 Standard 25 piece bag RF5601SR Standard 100 piece reel RF5601TR7 Standard 2500 piece reel RF5601PCK-410 Fully populated evaluation board w/ 5 piece bag RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS131029 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 9 RF5601 Absolute Maximum Ratings Parameter DC Supply Voltage RF Input Power Rating Unit 5.5 V +5* dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Moisture Sensitivity Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. MSL2 *Note: Maximum input power with a 50Ω load in High Gain mode. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max Temp = 25°C, VDD = 3.3V, LNA_EN = 3.3V, BYP_EN = 3.3V in high gain mode, BYP_EN = 0V in Bypass mode, Frequency = 4.9 GHz to 5.85 GHz unless otherwise noted Typical Conditions Frequency 4.9 DC Voltage Supply (VDD) 2.3 3.3 LNA_EN Low LNA_EN High GHz 4.8 V 0.2 V LNA OFF. See logic table for additional control settings. 2.3 3.3 VDD V LNA ON. BYP_EN control must be high simultaneously for High Gain Mode. See control table. 0.2 V Bypass mode ON. See logic table for more details. 1.8 3.3 VDD V Bypass mode OFF. See logic table for more details. 12 17 µA LNA in “On” state, over full DC supply range, LNA_EN supply range and over normal operating temperature range (-20°C to 75°C) 3 5 µA LNA in “Off” state, VDD = 0V; LNA_EN = 0V, BYP_EN = 0V 2 10 µA VDD = 2.3V to 4.8V, LNA_EN = 2.3V to 4.8V, over full frequency range, and over normal operating temperatures - 20°C to +75°C 12 15 dB Over full VDD and LNA_EN ranges, over frequency and over full temperature range from -40°C to +85°C 1.8 2.6 dB Over full VDD, LNA_EN, and BYP_EN voltages, over frequency and normal operating temperatures (-20°C to +75°C) 7.0 dB +1.0 dB BYP_EN Low BYP_EN High 5.85 LNA Current LNA IDD LNA Enable High Gain Mode Gain 9 Noise Figure Hi Gain Mode Bypass Mode Insertion Loss Passband Ripple 5.0 -1.0 Input IP3 RF Port Return Loss 9.6 +9 dBm 15.0 dB LNA is in High Gain mode, over full frequency range, over full VDD and LNA_EN voltage range High Gain mode Input and output. No external matching. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9 RF5601 Specification Parameter Unit Min Typ Condition Max Temp = 25°C, VDD = 3.3V, LNA_EN = 3.3V, BYP_EN = 3.3V in high gain mode, BYP_EN = 0V in Bypass mode, Frequency = 4.9 GHz to 5.85 GHz unless otherwise noted Typical Conditions (continued) RF Port Impedance 50 LNA Turn On/Off Time 100 Ω 160 Input and output. No external matching nSec ESD Human Body Model Charge Device Model 500 V EIA/JESD22-114A RF pins 500 V EIA/JESD22-114A DC pins 350 V JESD22-C101C all pins Control Logic Table Mode Controls VDD LNA_EN BYP_EN High Gain High High High Bypass Mode High Low Low Undefined* High High Low High In/Out Isolation High Low High *This state is not recommended RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 9 RF5601 Plots RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 9 RF5601 Evaluation Board Schematic LNA_EN BYP_EN VDD P1 1 2 C1 DNP 3 4 J1 RF IN 8 7 1 6 GND 2 5 3 RF OUT J2 4 Evaluation Board Layout RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 9 RF5601 Application Schematic – 4.9GHz to 5.85GHz VDD N/C C1 1uF 8 7 50 Ω µstrip J1 RFIN 1 6 2 5 50 Ω µstrip LNA EN 4 N/C 3 J3 ANT BYP_EN RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. Note: We evaluated this device with and without C1 but seen no performance difference. Depending on the layout and the nature of the supply voltage C1 could be used and stuffed with 1uF DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 9 RF5601 Pin Out N/C VDD 8 7 RF IN 1 6 N/C LNA_EN 2 5 RF OUT 3 4 BYP_EN N/C Package Drawing RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 9 RF5601 Pin Names and Descriptions Pin Name 1 RF IN 2 LNA_EN LNA Enable. Please see truth table for operation. 3 BYP_EN Bypass Enable. Please see truth table for operation. 4 NC 5 RF OUT 6 NC 7 VDD 8 NC Pkg Base Description RF Input. Input is matched to 50Ω and DC block is provided internally. No Connect. RF Output. Output is matched to 50Ω and DC-block is provided internally. No Connect. Supply voltage for the LNA circuit. No Connect The center metal base of the QFN package provides DC and RF ground as well as heat sink for the amplifier. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 9 RF5601 Tape and Reel Carrier tape basic dimensions are based on EIA 481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. Carrier tape is wound or placed onto a shipping reel either 330 mm (13 inches) in diameter or 178 mm (7 inches) in diameter. The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. Prior to shipping, moisture sensitive parts (MSL level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier ESD bag with the appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. It is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required, devices may be baked according to section 4, table 4-1, of Joint Industry Standard IPC/JEDEC J-STD-033. The table below provides useful information for carrier tape and reels used for shipping the devices described in this document. RFMD Part Number RF5601TR7 Reel Diameter Inch (mm) Hub Diameter Inch (mm) Width (mm) Pocket Pitch (mm) Feed Units per Reel 7 (178) 2.4 (61) 12 4 Single 2500 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 9