NBB-312 NBB-312 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz The NBB-312 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-312 provides flexibility and stability. The NBB312 is packaged in a low cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either 1,000 or 3,000 piece-per-reel quantities. Connectorized evaluation board designs optimized for high frequency are also available for characterization purposes. Package: MPGA, Bowtie, 3x3, Ceramic Features ■ Reliable, Low-Cost HBT Design ■ 12.5dB Gain ■ High P1dB of +15.8dBm at 6GHz ■ Single Power Supply Operation ■ 50Ω I/O Matched for High Frequency Use Applications ■ Narrow and Broadband Commercial and Military Radio Designs ■ Linear and Saturated Amplifiers ■ Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/LMDS/UNII/VSAT/ WiFi/Cellular/DWDM) Functional Block Diagram Ordering Information NBB-312 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz NBB-312-T1 Tape & Reel, 1000 Pieces NBB-312-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 10 NBB-312 Absolute Maximum Ratings Parameter Rating Unit RF Input Power +20 dBm Power Dissipation 350 mW Device Current 70 mA Channel Temperature 150 °C Operating Temperature -45 to +85 °C Storage Temperature -65 to +150 °C Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Exceeding any one or a combination of these limits may cause permanent damage. Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max General Performance VD = +4.6V, ICC = 50mA, Z0 = 50Ω, TA = +25°C Small Signal Power Gain, S21 12.9 dB f = 0.1GHz to 1.0GHz 12.9 dB f = 1.0GHz to 4.0GHz 11.7 dB f = 4.0GHz to 8.0GHz 9.7 dB f = 8.0GHz to 12.0GHz Gain Flatness, GF ±0.6 dB f = 0.1GHz to 8.0GHz Input VSWR 1.2:1 f = 0.1GHz to 7.0GHz 1.65:1 f = 7.0GHz to 10.0GHz 2.0:1 f = 10.0GHz to 12.0GHz Output VSWR 1.5:1 f = 0.1GHz to 12.0GHz Bandwidth, BW 11.0 GHz BW3 (3dB) Output Power at -1dB Compression, P1dB 14.9 dBm f = 2.0GHz 15.8 dBm f = 6.0GHz 15.0 dBm f = 8.0GHz 12.0 dBm f = 12.0GHz 4.9 dB f = 3.0GHz Third Order Intercept, IP3 +24.0 dBm f = 2.0GHz Reverse Isolation, S12 -15.6 dB 12.0 9.0 Noise Figure, NF Device Voltage, VD Gain Temperature Coefficient, / 4.4 4.6 -0.0015 4.8 f = 0.1GHz to 12.0GHz V dB/°C RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 10 NBB-312 Specification Parameter Unit Min Typ Condition Max MTTF versus Temperature at ICC = 50mA Case Temperature 85 °C Junction Temperature 123 °C >1,000,000 hours 152 °C/W MTTF Thermal Resistance θJC RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 10 NBB-312 Pin Names and Descriptions Pin Name Description 1-3 GND 4 RFIN RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. 5-7 GND Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. 8 RFOUT RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: Interface Schematic Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 8.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. 9 GND Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Package Drawing RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 10 NBB-312 Recommended PCB Layout Typical Bias Configuration NOTE: Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. Recommended Bias Resistor Values Supply Voltage, VCC (V) 8 10 12 15 20 Bias Resistor, RCC (Ω) 60 100 140 200 300 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 10 NBB-312 Application Notes Bonding Temperature (Wedge or Ball) It is recommended that the heater block temperature be set to 160°C ± 10°C. Extended Frequency InGaP Amplifier Designer’s Tool Kit (NBB-X-K1) This tool kit was created to assist in the design-in of the RFMD NBB- and NLB- series InGap HBT gain block amplifiers. Each tool kit contains the following: 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 10 NBB-312 Tape and Reel Dimensions (all dimensions in millimeters) 330 mm (13”) REEL ITEMS FLANGE HUB Diameter Thickness Space Between Flange Outer Diameter Spindle Hole Diameter Key Slit Width Key Slit Diameter SYMBOL B T F O S A D RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. Micro-X, MPGA SIZE (mm) SIZE (inches) 330 +0.25/-4.0 18.4 MAX 12.4 +2.0 102.0 REF 13.0 +0.5/-0.2 1.5 MIN 20.2 MIN 13.0 +0.079/-0.158 0.724 MAX 0.488 +0.08 4.0 REF 0.512 +0.020/-0.008 0.059 MIN 0.795 MIN DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 10 NBB-312 Typical Performance RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 10 NBB-312 Typical Performance (continued) Note: The s-parameter gain results shown above include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz = -0.06dB 5GHz to 9GHz = -0.22dB 10GHz to 14GHz = -0.50dB 15GHz to 20GHz = -1.08dB RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 10 NBB-312 RoHS Banned Material Content RoHS Compliant: Yes Package Total Weight in Grams (g): 0.028 Compliance Date Code: N/A Bill of Materials Revision: - Pb Free Category: e4 Bill of Materials Die Molding Compound Lead Frame Die Attach Epoxy Wire Solder Plating Pb 0 0 0 0 0 0 Cd 0 0 0 0 0 0 Hg 0 0 0 0 0 0 Parts Per Million (PPM) Cr VI 0 0 0 0 0 0 PBB 0 0 0 0 0 0 PBDE 0 0 0 0 0 0 This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131014 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 10