RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 VREG 2 3 N O T 5 RF OUT 4 EW Functional Block Diagram Product Description N The RF5122 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WiFi applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with a backside ground. The RF5122 is designed to maintain linearity over a wide range of supply voltages and power outputs. The RF5122 also has built-in power detector and incorporates the input, interstage, and output matching components internally which reduces the component count used externally and makes it easier to incorporate on any design. R Power Detector FO IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems Output Match Bias Circuit Applications Interstage Match N/C 6 VC2 Input Match ES IG RF IN 1 D Single Power Supply 3.0V to 3.6V 24.5dB Minimum Gain Input and Output Matched to 50 2400MHz to 2500MHz Frequency Range +18dBm @ <2.5% typ EVM, 120mA @ 3.3VCC PDETECT N Features Ordering Information RF5122 RF5122SR RF5122TR7 RF5122PCK-410 Standard 25 piece bag Standard 100 piece reel Standard 2500 piece reel Fully assembled evaluation board tuned for 2.4GHz to 2.5GHz and 5 loose sample pieces Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 11 RF5122 Unit Supply Voltage -0.5 to +5.0 VDC Power Control Voltage (VREG) -0.5 to 3.5 V DC Supply Current 400 mA Input RF Power +5 dBm -30 to +85 °C -40 to +150 °C Operating Ambient Temperature Storage Temperature Moisture sensitivity JEDEC Level 2 ESD HBM 450 V MM 50 V Parameter Min. Specification Typ. Max. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. N Rating ES IG Absolute Maximum Ratings Parameter Unit Condition D Temperature=+25°C, VCC =3.3V, VREG =2.8V pulsed at 1% to 100% duty cycle, Frequency=2450MHz, circuit per evaluation board schematic, unless otherwise specified Overall Output Power 2.50 18 dBm EVM* 2.5 At max data rate, OFDM modulation RMS, mean dB At +18dBm RF POUT and 54Mbps 1.25 ±dB -30°C to +85°C 0.7 V 1.35 1.50 V Operating 120 145 mA At +18dBm RF POUT and 54Mbps Quiescent 85 mA Data rate @<3.5% EVM RMS, mean, T=-30°C to +50°C 2 mA VCC =+3.3VDC Gain Variance Power Detector POUT =8dBm 0.4 R POUT =18dBm 1.25 FO Current 25.5 N 24.5 4 IEEE802.11g IEEE802.11n % Gain IREG Current GHz EW 2.40 Frequency 10 A Power Supply 3.0 3.3 3.6 VDC Operating Range VREG1, VREG2 Input Voltage 2.75 2.8 2.9 VDC Operating Range O T Shutdown Output VSWR 10:1 -15 -10 Turn-on Time** 0.5 1.0 S -27 dBm N Input Return Loss Second Harmonic dB Output stable to within 90% of final gain Fundamental frequency is between 2400MHz and 2500MHz; RF POUT =+18dBm. See note 2. Notes: *The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%. **The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation. Note 2: For best harmonic rejection please refer to the harmonic rejection application schematic. 2 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5122 Pin 1 Function RF IN Description Interface Schematic RF input. Input is matched to 50 and DC block is provided internally. VCC Interstage Match Input Match 4 5 N/C RF OUT Bias current control voltage for the first and second amplifier stage. Power detector which provides an output voltage proportional to the RF output power level. May need external decoupling capacitor for stability. May need external circuitry to bring output voltage to desired level. Must be left as no connect, not grounded. RF output. Output is matched to 50 and DC block is provided internally. VC2 VC1 VCC Voltage supply for the second amplifier stage. Pkg Base GND The center metal base of the QFN package provides DC and RF ground as well as heat sink for the amplifier. VCC2 Output Match RF OUT D 6 7 8 Voltage supply for the first amplifier stage. N VREG PDETECT ES IG 2 3 N EW Supply voltage for the bias reference and control circuit. May be connected with VC1 and VC2 (with a single supply voltage) as long as VCC does not exceed +4.5VDC in this configuration. N O T FO R Package Drawing DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 11 RF5122 VCC VC1 Pin Out 8 7 6 VC2 4 N O T FO R N EW D 3 N/C 5 RF OUT PDETECT VREG 2 ES IG N RF IN 1 4 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5122 Theory of Operation and Application Information The RF5122 is a two-stage power amplifier (PA) with a minimum gain of 24.5dB minimum gain in the 2.4GHz to 2.5GHz ISM band. The RF5122 has integrated input, interstage and output matching components thus allowing minimal bill of material (BOM) parts count in end applications. The RF5122 is designed primarily for IEEE802.11b/g/n WiFi applications where the available supply voltage and current are limited. This amplifier will operate to (and below) the lowest expected voltage made available by a typical PCMCIA slot in a laptop PC, and will maintain required linearity at decreased supply voltages. ES IG N The RF5122 requires only a single positive supply of 3.3V nominal (or greater) to operate to full specifications. Power control is provided through one bias control input pin (VREG). DC blocking caps are provided internally and the evaluation board circuit (available from RF Micro Devices, Inc. (RFMD)) is optimized for 3.3VDC applications. D For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground layout and ground vias. Pin 4 must be left as a no-connect on the PCB in order for the PA to work properly. Other configurations may also work, but the design process is much easier and quicker if the layout is copied from the RF5122 evaluation board. Gerber files of RFMD PCBA designs can be provided on request. The RF5122 is a very easy part to implement, but care in circuit layout and component selection is always advisable when designing circuits to operate at 2.5GHz. The RF5122 evaluation board layout and schematic are available using 0201 (US) size components which will help shrink the overall size of the total area of the PA and components of the intended design. Please contact RFMD Sales or Application Engineering for additional data and guidance. EW For best performance, it is important to duplicate (as closely as possible) the layout of the evaluation board. The RF5122 has primarily been characterized with a voltage on VREG of 2.8VDC. If you prefer to use a control voltage that is significantly different than 2.8VDC, or a different frequency than the recommended frequency range, contact RFMD Sales or Applications Engineering for additional data and guidance. QFN8 Package Area versus Other Small Form Factor Package Areas Length (mm) Area (mm2) N Package Type Width (mm) 3.1 3.0 QFN12 3.0 3.0 9.00 4.16 SOT 23-5 2.9 2.8 8.12 3.28 QFN8 2.2 2.2 4.84 0.00 R SOT 23-6 4.46 FO 9.30 Delta () (mm2) to QFN8 N O T An application schematic for 2.5GHz operation is included that has two additional components, one shunt inductor, and one shunt capacitor, on the output for improved second harmonic rejection. This layout provides ~20dB rejecetion at 5GHz with a minimal BOM count. DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 11 RF5122 Application Schematic for Improved Second Harmonic Performance P1 1 GND P1-2 2 VCC P1-3 3 VCC VCC VCC 3.6K P2 1 F VREG 2 PDETECT 1 GND N P2-2 3 1 nF ES IG P2-3 27 nH 1 F 8 50 strip 1 6 D J1 RF IN 7 50 strip 2 5 EW VREG 3 10 pF 1.8 nH* 50 strip 2.4 pF* 10 pF J4 RF OUT 4** * The 2.4 pF cap can be placed at the same point as the 1.8 nH inductor which should be as close as possible to the DC blocking cap (10 pF). The placement can be modified for the best linear performance. A series capacitor (10 pF) must be added to provide a DC block after the 2Fo Filter. N 330 pF PDETECT N O T FO R **Pin 4 must be left as a no-connect on the PCB. 6 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5122 Evaluation Board Schematic VCC P1 1 GND P1-2 2 VCC P1-3 3 VCC P2-3 P2 3 P3-3 2 PDETECT 1 GND C1 1 F VREG 8 7 50 strip J1 RF IN 1 L2 0 6 Interstage Match Output Match R1 0 2 Power Detector 50 strip 5 J4 RF OUT EW Bias Circuit D Input Match VREG ES IG C3 1 F N L1 27 nH C2 1 nF 4 *Pin 4 should be left as a no-connect on the PCB. N 3 NOTE: The RF5122 evaluation board layout and schematic are available using 0201 (US) size components which will help shrink the overall size of the total area of the PA and components of this intended design. Please contact RFMD Sales or Application Engineering for additional data and guidance. R C6 330 pF R2 0 N O T FO PDETECT DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 11 RF5122 Evaluation Board Layout Board Size 1.0” x 1.0” N O T FO R N EW D ES IG N Board Thickness 0.031”; Board Material FR-4; Multi-Layer 8 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5122 ACP versus POUT EVM versus POUT 8.0 0.0 ACP1 2400MHz ACP1 2450MHz ACP1 2500MHz 2400MHz ACP2 2450MHz ACP2 2500MHz ACP2 -10.0 2400MHz 2450MHz 2500MHz 7.5 7.0 6.5 6.0 -20.0 5.5 5.0 -40.0 4.5 4.0 N EVM (%) 3.5 3.0 -50.0 2.5 2.0 -60.0 1.5 1.0 -70.0 0.5 0.0 -80.0 10.0 12.0 14.0 16.0 18.0 20.0 0.0 22.0 ES IG ACP (dBc) -30.0 5.0 10.0 15.0 20.0 Output Power (dBm) Output Power (dBm) Gain verus POUT D Operating Current versus POUT 150.0 30.0 140.0 EW 29.0 130.0 28.0 120.0 N Gain (dB) 26.0 25.0 ICC (mA) 110.0 27.0 100.0 90.0 80.0 70.0 R 24.0 2400MHz 2450MHz 2500MHz 22.0 0.0 5.0 FO 23.0 10.0 15.0 20.0 60.0 2400MHz 2450MHz 2500MHz 50.0 40.0 25.0 0.0 5.0 10.0 15.0 20.0 Output Power (dBm) Output Power (dBm) O T PDETECT versus POUT 1.8 1.6 N 1.4 PDETECT (V) 1.2 1.0 0.8 0.6 0.4 2400MHz 2450MHz 2500MHz 0.2 0.0 0.0 5.0 10.0 15.0 20.0 Output Power (dBm) DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 11 RF5122 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch to 8inch gold over 180inch nickel. N PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. ES IG PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. N O T FO R N EW D PCB Metal Land and Solder Pattern Thermal vias for center slug “C” should be incorporated into the PCB design. The number and size of thermal vias will depend on the application, the power dissipation, and this electrical requirements. Example of the number and size of vias can be found on the RFMD evaluation board layout. 10 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5122 RoHS* Banned Material Content RoHS Compliant: Yes Pack age total weight in grams (g): 0.008 Compliance Date Code: N/A B ill of Materials Revision: e3 N Pb Free Category: P a r ts P e r M i l l i o n ( P P M ) B i l l o f M a te r i a l s Cd Hg Cr VI Die 0 0 0 0 PB B 0 M o l d i n g Co m p o u n d 0 0 0 0 0 Le a d F r a m e 0 0 0 0 0 D i e A tta c h E p o x y 0 0 0 0 0 Wire 0 0 0 0 0 S o l d e r P l a ti n g 0 0 0 0 0 D ES IG Pb PB T h i s R o H S b a n n e d m a te r i a l c o n te n t d e c l a r a ti o n w a s p r e p a r e d s o l e l y o n i n f o r m a ti o n , i n c l u d i n g a n a EW d a ta , p r o v i d e d to R F M D b y i ts s u p p l i e r s , a n d a p p l i e s to th e B i l l o f M a te r i a l s ( B O M ) r e v i s i o n n o * DIRECTIVE 2002/95/EC OF THE EU ROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction o N O T FO R N use of certain hazardous substances in electrical and electronic equipment DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 11