SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Features GaAs MESFET InGaP HBT Active Bias VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS GaN HEMT VPC2 RFOUT/ VC2 R RF MEMS Specification Typ. FO Parameter Min. Frequency of Operation On-Chip Active Bias Control High Gain: 24dB Typ. at 1960MHz Patented High Reliability GaAs HBT Technology Surface-Mountable Plastic Package Applications WCDMA Systems PCS Systems Multi-Carrier Applications N Si BJT EW Si BiCMOS D VC1 SiGe BiCMOS High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3 S ES IG RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This Optimum Technology package is also manufactured with green molding compounds Matching® Applied that contain no antimony trioxide or halogenated fire retardants. GaAs HBT N Product Description 1700 T Output Power at 1dB Compression [1] O Adjacent Channel Power [1] Max. 2200 Unit Condition 29.5 MHz dBm 29.5 -55.0 dBm dBc 2140MHz 1960MHz, IS-95 at POUT =21.0dBm, WCDMA at POUT =20.7dBm 1960MHz -50.0 24.0 -47.0 dBc dB 2140MHz 1960MHz 23.5 1.6:1 24.5 dB Input VSWR [1,2] 2140MHz 1960MHz Output Third Order Intercept Point [2] 1.6:1 46.5 dBm 2140MHz 1960MHz, Power out per tone=+14dBm Noise Figure [1,2] 47.0 5.5 dBm dB 2140MHz 1960MHz dB mA 2140MHz IBIAS =10mA, IC1 =70mA, IC2 =320mA N Small Signal Gain [1,2] 21.0 Device Current [1,2] 360 5.5 400 425 Device Voltage [1,2] Thermal Resistance (Junction - Lead) Test Conditions: Z0 =50 4.75 5.0 5.25 V 31 Temp=25°C VCC =5.0V °C/W [1] Optimal ACP tune TL =85°C [2] Optimal IP3 tune RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. (+1) 336-678-5570 [email protected] 1 of 8 SPA2318Z Absolute Maximum Ratings Parameter Rating Unit Max Supply Current (IC1) at VCC typ. 150 mA Max Supply Current (IC2) at VCC typ. 750 mA Max Device Voltage (VCC) at ICC typ. 6.0 V Max RF Input Power 16 dBm Max Junction Temp (TJ) +160 °C Max Storage Temp +150 °C 3 MSL Moisture Sensitivity Level Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. ES IG N S Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l ACP Optimized 1960MHz Application Circuit Data, ICC =400mA, VCC =5V IS-95, 9 Channels Forward 1960 MHz Adjacent Channel Power vs. Channel Output Power IS-95 CDMA at 1960 MHz -45 EW -50 dBc T=25oC D -40 -55 N -60 R -65 FO -70 -75 18 20 dBm 22 24 dBm 21 dBm 17 dBm 25C -40C 85C 13 dBm 24 N O T 16 23.75 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909 SPA2318Z ACP Optimized 1960MHz Application Circuit Data, ICC =400mA, VCC =5V P1dB vs Frequency Gain vs. Frequency 31 30 30 27 29 dB dBm 24 28 21 27 25C 25C 18 85C 26 85C -40C 1.94 1.95 1.96 1.97 1.98 15 1.93 1.99 1.94 1.96 1.97 1.98 1.99 GHz IG GHz ES ACP Optimized 1960MHz Application Circuit Data, ICC =400mA, VCC =5V Input/Output Return Loss, Isolation vs Frequency, T=25°° C Device Current vs. Source Voltage 0 D 600 -5 Device Current (mA) 500 2 5C -40 C 8 5C 400 EW -10 -15 dB 1.95 N 25 1.93 S -40C -20 -25 S11 S12 -30 N S22 -35 1.94 1.95 1.96 1.98 1.99 200 100 0 0 1 2 3 4 5 6 Vcc (V) N O T FO GHz 1.97 R -40 1.93 300 DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 8 SPA2318Z 1930MHz to 1990MHz Application Schematic Vcc 10uF Tantalum External Connection 68pF ° :, 7.3 1000pF Z=63 Ic1 Ic2 8.2pF 1.2nH 18nH 1.0pF 1.5pF(IP3) 2.2pF(ACP) 300 Ohm 8 2 7 3 6 4 5 1200pF 20 nH 20pF Z=50 :, 13.2° 2.2pF S Ibias 1 N 6.8K Tune for optimal ACP performance ES IG Vpc 1930MHz to 1990MHz Evaluation Board Layout and Bill of Materials EW C4 Short L2 C6 C7 L1 C3 R1 L3 N C1 D Vcc C5 C8 C2 Tune for optimal ACP performance FO R R2 Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board C9 Ref. Des. Value Part Number C1 1.5pF, ±0.25pF (IP3) 2.2pF, ±0.25pF (ACP) Rohm MCH18 series C2 1200pF, 5% Rohm MCH18 series C3 1.0pF, ±0.25pF Rohm MCH18 series C4 68pF, 5% Rohm MCH18 series C5 10uF, 10% AVX TAJB106K020R C6 1000pF, 5% Rohm MCH18 series C7 8.2pF, ±0.5pF Rohm MCH18 series C8 2.2pF, ±0.25pF Rohm MCH18 series C9 20pF, 5% Rohm MCH18 series Toko LL1608-FS series L1 1.2nH, ±0.3nH L2 18nH, 5% Toko LL1608-FS series L3 20nH, 5% Coilcraft HQ 0805 series R1 6.8K Ohm, 5% Rohm MCR03 series R2 300 Ohm, 5% Rohm MCR03 series O T Vpc N ACP Optimized 2140MHz Application Circuit Data, ICC =400mA, VCC =5V IS-95, WCDMA setup is 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909 SPA2318Z PCCPCH+PSCH+SSCH+CPICH+PICH+64DPCH, 10.5dB peak to average at 0.001% probability W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power -40 W-CDMA at 2.14 GHz 21.6 T=25oC -45 dBc -50 -55 -60 S 25C -40C -65 N 85C -70 17 18 19 dBm 20 21 22 IG 16 ES ACP Optimized at 2140MHz Application Circuit Data, ICC =400mA, VCC =5V 30 30 EW 27 29 dB 24 28 21 N dBm Gain vs. Frequency D P1dB vs Frequency 31 27 25C 25C 26 18 R 85C 85C -40C -40C 2.12 2.13 2.14 2.15 FO 25 2.11 2.16 15 2.11 2.17 2.12 2.13 GHz -20 T Device Current (mA) dB -15 S 11 -25 S 12 -30 S 22 400 300 200 0 2.12 2.13 2.14 GHz DS150909 25 C -40 C 85 C 500 100 -35 -40 2.11 2.17 Device Current vs. Source Voltage O -10 2.16 600 N -5 2.15 GHz Input/Output Return Loss, Isolation vs Frequency, T=25°° C 0 2.14 2.15 2.16 2.17 0 1 2 3 4 5 6 Vcc (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 8 SPA2318Z 2110MHz to 2170MHz Application Schematic Vcc 10uF Tantalum External Connection :, 21.7° 56pF Ic2 Z=63 1000pF Ic1 2.7nH 5.6pF 5.6nH Ibias 1 8 2 7 3 6 4 5 18 nH 39pF Z=50 :, 11.6° 1.8pF 1.5pF (IP3) 2.2pF (ACP) 300 : 1800pF S 6.8K : N Tune for optimal ACP performance 0.1uF Tantalum ES IG Vpc Vcc EW C3 C4 C2 Short L2 L1 C5 N C1 D 2110MHz to 2170MHz Evaluation Board Layout and Bill of Materials R C6 C7 FO R2 C8 T Value Part Number C1 1.5pF, ±0.25pF (IP3) 2.2pF, ±0.25pF (ACP) Rohm MCH18 series C2 56pF, 5% Rohm MCH18 series C3 10uF, 10% AVX TAJB106K020R C4 1000pF, 5% Rohm MCH18 series C5 5.6pF, ±0.5pF Rohm MCH18 series C6 1.8pF, ±0.25pF Rohm MCH18 series C7 1800pF, 5% Rohm MCH18 series C8 0.1uF, 10% Matsuo 267M3502104K L3 R1 Tune for optimal ACP performance Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board C9 C9 39pF, 5% Rohm MCH18 series L1 2.7nH, ±0.3nH Toko LL1608-FS series L2 5.6nH, ±0.3nH Toko LL1608-FS series L3 18nH, 5% Toko LL1608-FS series R1 6.8K Ohm, 5% Rohm MCR03 series R2 300 Ohm, 5% Rohm MCR03 series Vpc N O Note: All inductors are Toko LL1608-FS unless noted otherwise Ref. Des. 6 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909 SPA2318Z Pin 1 Function VC1 2 VBIAS 3 4 RF IN VPC2 5, 6, RF OUT / VC2 7, 8 EPAD GND Description VC1 is the supply voltage for the first stage transistor. The configuration as shown on the Application Schematic is required for optimum RF performance. VBias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. VPC2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic. RF output and bias pins. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see Application Schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern. Simplified Device Schematic 2 4 ACTIVE BIAS NETWORK 1 5-8 ES 2 IG N S Simplified Device Schematic ACTIVE BIAS NETWORK D A 3 Parame Max. Su EW Max. Su Max. De Max. RF N Package Drawing N O T FO R Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 8 SPA2318Z IG Recommended Land Pattern ES 0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) 0.140 [3.56] 0.020 [0.51] N 0.050 [1.27] 0.300 [7.62] EW D Machine Screws 0.080 [2.03] N S Branding Diagram FO R Ordering Information Ordering Code Description SPA2318Z 7” Reel with 500 pieces T SPA2318ZSQ SPA2318ZSR Sample bag with 25 pieces 7” Reel with 100 pieces 1960MHz PCBA SPA2318Z-EVB2 2140MHz PCBA N O SPA2318Z-EVB1 8 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909