RF2483 RF2483Low Noise DualBand Quadrature Modulator with AGC LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC RF OUT LB GC Mode Control & Biasing VCC2 2 * 15 GC DEC Power Control 14 VREF ISIG P 3 13 QSIG P ISIG N 4 12 QSIG N +45° -45° EN 5 Applications TDMA/GSM/EDGE Handsets GSM/EDGE Handsets W-CDMA Handsets TDMA-Based Wireless Applications Wireless Local Loop Base Stations GND2 VCC3 1 * 16 +45° -45° 11 BAND SEL 6 7 8 9 10 GND1 17 LO HB 18 GND LO 19 LO LB Dual-Band Operation 700 MHz to 2700MHz -156dBm/Hz noise at 20MHz offset +19dBm OIP3 +6dBm OP1dB 35dB Gain Control Range Single 2.7V to 3.3V Supply 20 VCC1 * RF OUT HB Features GND3 Package Style: QFN, 20-Pin, 4mmx4mm * * Represents "GND". Functional Block Diagram Product Description The RF2483 is a dual-band direct I/Q to RF modulator designed for handset applications where multiple modes of operation are required. ‘The device provides common differential I/Q inputs and a common AGC amplifier. Independent single-ended LO inputs and single-ended high and low band RF outputs are provided. The device achieves a very low out-of-band noise density of -156dBm/Hz minimizing RF filtering. Operating from a single 2.7V supply, the device is assembled in a 4mm x 4mm, 20-pin, QFN package. Ordering Information RF2483SQ RF2483SR RF2483TR7 RF2483TR13 RF2483PCK-410 Sample Bag with 25 Pieces 7" Sample Reel with 100 Pieces 7" Reel with 750 Pieces 13" Reel with 2500 Pieces 2400MHz PCBA with 5-piece Sample Bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 34 RF2483 Absolute Maximum Ratings Parameter Rating Supply Voltage Unit -0.5 to 3.6 V Storage Temperature -40 to +150 °C Operating Ambient Temperature -40 to +85 °C Input Voltage, any pin -0.5 to 3.6 V +10 dBm Input Power, any pin Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Parameter Specification Min. Typ. Max. Unit Condition Operating Range Supply Voltage* 2.7 3.3 V Temperature Range* -40 +85 °C High Band Frequency Range* 1700 2700 MHz Bandsel =2.7V Low Band Frequency Range* 700 1000 MHz Bandsel =0V 110 mA GC =2.0V, VCC =2.7V, EN =2.7V, Bandsel =2.7V, DC Parameters High Band Supply Current 65 85 IQ =1.2VDC, TA =25oC Low Band Supply Current 65 85 110 mA GC =2.0V, VCC =2.7V, EN =2.7V, Bandsel =0V, IQ =1.2VDC, TA =25oC Sleep Current <1.0 10 A EN=0V Logic Levels Input Logic Low 0 0.5 V Input Logic High 1.4 VCC V Logic Pins Input Current* A <1.0 LO Input Port High Band Frequency Range* 1700 2700 MHz Bandsel=2.7V Low Band Frequency Range* 700 1000 MHz Bandsel=0V High Band LO Input Power* -3 0 6 dBm Bandsel=2.7V LO Band LO Input Power* -3 0 6 dBm Bandsel=0V Input Impedance* 50 *=Not tested in production 2 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Specification Min. Typ. Max. Parameter Unit Condition VCC =2.7V, EN=2.7V, Bandsel=2.7V, FLO=1900MHz, PLO=0dBm, LO HB and RF OUT HB ports are matched to 50. IQ=800mVP-P at 100kHz 1.2VDC. Input IQ signals driven differentially and in quadrature from a 50 source impedance. TA =25oC I/Q Modulator High Band (1700MHz to 2200MHz) Baseband Input Voltage* 1.15 Baseband Input Level 1.2 1.25 0.8 Baseband Input Impedance* Input Bandwidth* 50 Sideband Suppression Carrier Suppression V Common mode voltage VPP Measured differentially 5.5 k 150 MHz Measured at 100kHz I/Q source impedance 50 30 43 dBc GC=2.0V, no I/Q adjustment 30 43 dBc GC=1.5V, no I/Q adjustment 30 42 dBc GC=1.0V, no I/Q adjustment 30 40 dBc GC=0.5V, no I/Q adjustment 30 37 dBc GC=2.0V, no I/Q adjustment 30 35 dBc GC=1.5V, no I/Q adjustment 20 23 dBc GC=1.0V, no I/Q adjustment 20 22 dBc GC=0.5V, no I/Q adjustment 40 47 dBc GC=2.0V 40 47 dBc GC=1.5V 40 54 dBc GC=1.0V 40 46 dBc GC=0.5V 3rd Harmonic of Modulation Suppression at FLO-3x100kHz Baseband Inputs DC Current Drain* 100 A Baseband Inputs AC Current Drain* 100 APP VCC =2.7V, EN=2.7V, Bandsel=0V, FLO=900MHz, PLO=0dBm, LO LB and RF OUT LB ports are matched to 50. IQ=800mVP-P at 100kHz 1.2VDC. Input IQ signals driven differentially and in quadrature from a 50 source impedance. TA =25oC I/Q Modulator Low Band (700MHz to 1000MHz) Baseband Input Voltage* 1.15 Baseband Input Level Baseband Input Impedance* Input Bandwidth* Sideband Suppression Carrier Suppression 1.2 0.8 50 1.25 V Common mode voltage VPP Measured differentially 5.5 k 150 MHz Measured at 100kHz I/Q source impedance 50 30 41 dBc GC=2.0V, no I/Q adjustment 30 43 dBc GC=1.5V, no I/Q adjustment 30 42 dBc GC=1.0V, no I/Q adjustment 30 40 dBc GC=0.5V, no I/Q adjustment 35 48 dBc GC=2.0V, no I/Q adjustment 35 45 dBc GC=1.5V, no I/Q adjustment 30 40 dBc GC=1.0V, no I/Q adjustment 25 33 dBc GC=0.5V, no I/Q adjustment 3rd Harmonic of Modulation *=Not tested in production DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 34 RF2483 Specification Min. Typ. Max. Parameter Unit Condition I/Q Modulator Low Band, cont. Suppression at FLO-3x100kHz 40 57 dBc GC=2.0V 40 57 dBc GC=1.5V 40 60 dBc GC=1.0V 40 52 dBc GC=0.5V Baseband Inputs DC Current Drain* 100 A Baseband Inputs AC Current Drain* 100 APP VCC =2.7V, EN=2.7V, Bandsel=2.7V, FLO=1900MHz, PLO=0dBm, LO HB and RF OUT HB ports are matched to 50. Input IQ signals driven differentially and in quadrature from a 50 source impedance. TA =25oC Variable Gain Amplifiers High Band (1700MHz to 2200MHz) Gain Control Voltage Range 0 Gain Control Range 32 35 Gain Control Slope 26 29 Gain Control Input Impedance* 2.0 33 10 Output Power -3 0.4 V dB dB/V Difference between output power at GC=2.0V and GC=0.5V Calculated GC=1.0V and 1.5V k 3 dBm GC=2.0V, IQ=800mVP-P at 100kHz -8 -5 -2 dBm GC=1.5V, IQ=800mVP-P at 100kHz -24 -20 -16 dBm GC=1.0V, IQ=800mVP-P at 100kHz -35 -30 -38 Output Noise at FLO+20MHz* dBm GC=0.5V, IQ=800mVP-P at 100kHz -155 dBm/Hz GC=2.0V, IQ=800mVP-P at 100kHz -156.7 dBm/Hz Output P1dB* +6 dBm IQ at 100kHz Output IP3* +20 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. Intermodulation IM3 tone at FLO+70kHz and FLO+130kHz relative to tone at FLO+90kHz GC=2.0V, IQ=0mVP-P Two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. 40 50 dBc GC=2.0V 40 50 dBc GC=1.5V 40 50 dBc GC=1.0V 40 47 dBc GC=0.5V *=Not tested in production 4 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Specification Min. Typ. Max. Parameter Unit VCC =2.7V, EN=2.7V, Bandsel=0V, FLO=900MHz, PLO=0dBm, LO LB and RF OUT LB ports are matched to 50. Input IQ 1.2Vdc, signals driven differentially and in quadrature from a 50 source impedance. TA =25oC Variable Gain Amplifiers Low Band (700MHz to 1000MHz) Gain Control Voltage Range 0 Gain Control Range 32 36 Gain Control Slope 26 29.5 Gain Control Input Impedance* 2.0 V dB 33 10 Output Power Condition dB/V Difference between output power at GC=2.0V and 0.5V Calculated using output power at GC=1.0V and 1.5V k -3 0.8 3 dB GC=2.0V, IQ=800mVP-P at 100kHz -7.5 -4.5 -1.5 dB GC=1.5V, IQ=800mVP-P at 100kHz -24 -21 -16 dB GC=1.0V, IQ=800mVP-P at 100kHz -41 -35 -33 dB GC=0.5V, IQ=800mVP-P at 100kHz Output Noise at FLO+20MHz* -156.4 dBm/Hz GC=2.0V, IQ=800mVP-P at 100kHz -157.2 dBm/Hz GC=2.0V, IQ=0mVP-P Output P1dB* +6 dBm IQ at 100kHz Output IP3* +19 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVPP. Intermodulation IM3 tone at FLO+70kHz and FLO+130kHz relative to tone at FLO+90kHz Two baseband tones at 90kHz and 110kHz applied at both I and Q inputs, each tone 400mVP-P. 40 50 dBc GC=2.0V 40 50 dBc GC=1.5V 40 50 dBc GC=1.0V 40 50 dBc GC=0.5V *=Not tested in production DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 34 RF2483 Specification Min. Typ. Max. Parameter Unit Condition VCC =2.7V, EN=2.7V, Bandsel=2.7V, FLO=2400MHz, PLO=0dBm, LO HB and RF OUT HB ports are matched to 50. IQ=800mVP-P at 100kHz 1.2VDC. Input IQ signals driven differentially and in quadrature from a 50 source impedance. TA =25oC I/Q Modulator High Band (2400MHz) Baseband Input Voltage* 1.15 Baseband Input Level 1.2 1.25 0.8 Baseband Input Impedance* V Common mode voltage VPP Measured differentially 5.5 k Input Bandwidth* 50 150 MHz I/Q source impedance 50 Sideband Suppression 30 34 dBc GC=2.0V, no I/Q adjustment 30 37 dBc GC=1.5V, no I/Q adjustment 38 43 dBc GC=1.0V, no I/Q adjustment 40 47 dBc GC=0.5V, no I/Q adjustment 30 38 dBc GC=2.0V, no I/Q adjustment 30 38 dBc GC=1.5V, no I/Q adjustment 22 32 dBc GC=1.0V, no I/Q adjustment 16 22 dBc GC=0.5V, no I/Q adjustment Carrier Suppression Measured at 100kHz 3rd Harmonic of Modulation Suppression at FLO-3x100kHz 50 58 dBc GC=2.0V 50 58 dBc GC=1.5V 50 59 dBc GC=1.0V 50 62 dBc GC=0.5V Baseband Inputs DC Current Drain* 100 A Baseband Inputs AC Current Drain* 100 APP VCC =2.7V, EN=2.7V, Bandsel=2.7V, FLO=2400MHz, PLO=0dBm, LO HB and RF OUT HB ports are matched to 50. Input IQ signals driven differentially and in quadrature from a 50 source impedance. TA =25oC Variable Gain Amplifiers High Band (2400MHz) Gain Control Voltage Range 0 Gain Control Range 32 35 Gain Control Slope 26 29 Gain Control Input Impedance* Output Power Output Noise at FLO+20MHz* 2.0 V dB 33 10 dB/V Difference between output power at GC=2.0V and GC=0.5V Calculated GC=1.0V and 1.5V k -3 0.4 3 dB GC=2.0V, IQ=800mVP-P at 100kHz -10 -7 -3 dB GC=1.5V, IQ=800mVP-P at 100kHz -22 -18 -14 dB GC=1.0V, IQ=800mVP-P at 100kHz -39 -35 -30 dB GC=0.5V, IQ=800mVP-P at 100kHz -155 dBm/Hz GC=2.0V, IQ=800mVP-P at 100kHz -156.7 dBm/Hz GC=2.0V, IQ=0mVP-P Output P1dB* +6 dBm IQ at 100kHz Output IP3* +20 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. *=Not tested in production 6 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Specification Min. Typ. Max. Parameter Unit Condition VCC =2.7V, EN=2.7V, Bandsel=2.7V, FLO=2700MHz, PLO=0dBm, LO HB and RFOUT HB ports are matched to 50 IQ=800mVP-P at 100KhZ 1.2VDC. Input IQ signals driven differentally and in quadrature from a 50 source impedance. TA =25°C I/Q Modulator High Band (2700MHz) Baseband Input Voltage* 1.2 V Common mode voltage Baseband Input Level* 0.8 VPP Measured differentially Baseband Input Impedance* 5.5 k Input Bandwidth* 150 MHz Sideband Suppression* 34 dBc GC=2.0V, no I/Q adjustment 37 dBc GC=1.5V, no I/Q adjustment 43 dBc GC=1.0V, no I/Q adjustment 47 dBc GC=0.5V, no I/Q adjustment Carrier Suppression* Measured at 100kHz I/Q source impedance 50 38 dBc GC=2.0V, no I/Q adjustment 38 dBc GC=1.5V, no I/Q adjustment 32 dBc GC=1.0V, no I/Q adjustment 22 dBc GC=0.5V, no I/Q adjustment 3rd Harmonic of Modulation Suppression at FLO-3x100kHz* 58 dBc GC=2.0V 58 dBc GC=1.5V 59 dBc GC=1.0V dBc GC=0.5V 62 Baseband Input DC Current Drain* 100 A Baseband Input AC Current Drain* 100 APP VCC =2.7V, EN=2.7V, Bandsel=2.7V, FLO=2700MHz, PLO=0dBm, LO HB and RFOUT HB ports are matched to 50 IQ=800mVP-P at 100KhZ 1.2VDC. Input IQ signals driven differentally and in quadrature from a 50 source impedance. TA =25°C Variable Gain Amplifiers High Band (2700MHz) Gain Control Voltage Range* 0 2.0 V Gain Control Range* 35 dB Gain Control Slope* 29 dB/V Gain Control Input Impedance* 10 k Output Power* 0.4 dB -7 dB GC=1.5V, IQ=800mVP-P at 100kHz -18 dB GC=1.0V, IQ=800mVP-P at 100kHz Output Noise at FLO + 20MHz* Difference between output power at GC=2.0V and GC=0.5V Calculated GC=1.0V and 1.5V GC=2.0V, IQ=800mVP-P at 100kHz -35 dB GC=0.5V, IQ=800mVP-P at 100kHz -155 dBm/Hz GC=2.0V, IQ=800mVP-P at 100kHz -156.7 dBm/Hz Output P1dB* +6 dBm IQ at 100kHz GC=2.0V, IQ=0mVP-P Output IP3* +20 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P *=Not tested in production DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 34 RF2483 Mode Truth Table 8 of 34 Mode ENABLE BAND SEL Condition Sleep 0 X I/Q and GC inputs go open circuit through the use of a FET switch in sleep mode High Band Mode 1 1 LO input LO HB RF output = RF OUT HB Low Band Mode 1 0 LO input LO LB RF output = RF OUT LB 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Pin Names and Descriptions Pin 1 Function VCC3 Description Interface Schematic Supply for RF output circuits. VCC3 RF Output Amplifier 2 VCC2 Supply for modulator and biasing circuits. VCC2 VCC2 Modulator and VGA 3 4 ISIG P ISIG N In phase I channel positive baseband input port. Best performance is achieved when the ISIGP and ISIGN are driven differentially. The recommended CW differential drive level (VISIGP -VISIGN) is 800mVP-P. This input should be DC-biased at 1.2V±0.05V. The common-mode DC coltage on the ISIGP and ISIGN input signals is used to bias the modulator. In sleep mode an internal FET switch is opened, the input goes high impedance and the modulator is de-biased. The input impedance is typically 5.5k at low frequencies and at higher frequencies can be modeled as 50 in series with 12pF to ground. Phase or amplitude errors between the ISIGP and ISIGN signals may result in the even order distortion of the modulation in the output spectrum. DC offsets between the ISIGP and ISIGN signals will result in increased carrier leakage. Small DC offsets may be deliberately applied between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel out LO leakage. The optimum corrective DC offsets will change with mode, frequency and gain control. Common-mode noise on the ISIGP and ISGN should be kept low as it may degrade the noise performance of the modulator. Phase offsets may be applied between the I and Q channels to improve the sideband suppression performance. In phase I channel negative baseband input port. See ISIGP. V CC2 50 12 pF V CC2 50 12 pF 5 ENABLE 6 VCC1 Enables power to the device. CMOS input. Logic 1 (1.4V to VCC)=Enabled. Logic 0 (0V to 0.5V)=Powered Down. Supply for the LO buffers and quadrature network. The sideband suppression is a function of the VCC1 voltage. The inclusion of R3 (39) lowers the voltage on VCC1 by around 400mV and results an improvement in sideband suppression but around a 0.2dB increase in noise at 20MHz offset. V C C 2 VCC1 LO Quadrature Generator and Buffers GND1 DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 34 RF2483 Pin 7 Function LOLB 8 GND LO 9 LOHB 10 11 GND1 BAND SEL 12 QSIG N Description Interface Schematic Local oscillator input low band. LO LB This input is biased internally at around 1.6V when the chip is in low band mode and 0V when the chip is in high band mode or powered down. The LO signal typically needs to be AC coupled. The noise performance, carrier suppression at low output powers and sideband suppression are all a function of LO power. The optimum LO power is between 0dBm and 3dBm. G N D LO The device will work with LO powers as low as -20dBm however this is at the expense of higher noise performance at high output powers and poorer sideband suppression. Ground return for the local oscillator input signals. See pins 7 and 9. The GND LO pin is effectively the complementary LO input for both the high band and low band LO signals. It has significant amounts of LO signal flowing through it. This pin is brought out as an independent ground to enable the PCB board designer to isolate the LO return from the RF outputs ground and the general chip ground. It is recommended that this ground is kept isolated from the die flag ground. Any connections between the GND LO and any other ground should be made through a ground plane. Local oscillator input high band. LO H B This input is biased internally at around 1.6V when the chip is in high band mode and 0V when the chip is in low band mode or powered down. The LO HB signal typically needs to be AC coupled. The noise performance, carrier suppression at low output powers and sideband suppression are all a function of LO power. The optimum LO power is between 0dBm and 3dBm. G N D LO The device will work with LO powers as low as -20dBm however this is at the expense of higher noise performance at high output powers and poorer sideband suppression. Ground for LO buffers. See pin 6. Band select input to define active mode. CMOS input. Logic 1 (1.4V to VCC)=High band mode. Logic 2 (0V to 0.5V)=Low band mode. Quadrature channel negative baseband input port. See QSIGP. V C C 2 V CC2 50 12 pF 10 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Pin 13 14 15 16 Function QSIG P VREF GC DEC GC Description Interface Schematic Quadrature Q channel positive baseband input port. Best performance is achieved when the ISIGP and ISIGN are driven differentially. The recommended CW differential drive level (VQSIGP -VQSIGN) is 800mVP-P. This input should be DC-biased at 1.2V±0.05V. The common-mode DC voltage on the QSIGP and QSIGN input signals is used to bias the modulator. In sleep mode an internal FET switch is opened, the input goes high impedance and the modulator is de-biased. The input impedance is typically 5.5k at low frequencies and at higher frequencies can be modeled as 50 in series with 12pF to ground. Phase or amplitude errors between the QSIGP and QSIGN signals which may result in an increase in the even order distortion of the modulation in the output spectrum. DC offsets between the QSIGP and QSIGN signals will result in an increased carrier leakage. Small DC offsets may be deliberately applied between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel out the LO leakage. The optimum corrective DC offsets will change with mode, frequency and gain control. Common-mode noise on the QSIGP and QSIGN should be kept low as it may degrade the noise performance of the modulator. Phase offsets may be applied between the I and Q channels to improve the sideband suppression performance. Voltage reference decouple with an external 10nF capacitor to ground. The voltage on this pin is typically 1.67V when the chip is enabled. The voltage is 0V when the chip is powered down. The purpose of this decoupling capacitor is to filter out low frequency noise (20MHz) on the gain control lines. Poor positioning of the VREF decoupling capacitor can cause a degradation in LO leakage. A voltage of around 2.5V on this pin indicates that the die flag under the chip is not grounded and the chip is not biased correctly. Voltage reference decouple with an external 1nF decoupling capacitor to ground. The voltage on this pin is a function of gain control (GC) voltage when the chip is enabled. The voltage is 0V when the chip is powered down. The purpose of this decoupling capacitor is to filter out low frequency noise (20MHz) on the gain control lines. The size of the capacitor on the GC DEC line will effect the settling time response to a change in gain control voltage. A 1nF capacitor equates to around 200ns settling time and a 0.5nF capacitor equates to a 100ns settling time. There is a trade-off between settling time and noise contributions by the gain control circuitry as gain control is applied. Poor positioning of the VREF decoupling capacitor can cause a degradation in LO leakage. Gain control voltage. Maximum output power at 2.0V. Minimum output power at 0V. When the chip is enabled the input impedance is 10k referenced to 1.7VDC. When the chip is powered down a FET switch is opened and the input goes high impedance. V CC2 50 12 pF 4 k V CC2 + 4 k V CC2 + - V CC2 4 k 10 k - 1.7 V + 17 RF OUT LB 18 GND2 DS110505 RF low band output. Open collector output. The output should be biased at VCC through an inductor that can be used to form part of an output matching circuit. In our proposed applications circuit some power is dissipated in R6 (130) which appears as a de-Qing resistor in parallel with the output inductor L4. If R6 is eliminated and the RFOUT LB pin is re-matched to 50 it is possible to get approximately 5dB extra power out of the device in low band mode. Ground for RF output sections. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 34 RF2483 Pin 19 Function RF OUT HB 20 Die Flag GND3 GND4 Description Interface Schematic RF high band output. Open collector output. The output should be biased at VCC through an inductor that can be used to form part of an output matching circuit. In our proposed applications circuit some power is dissipated in R4 (180) which appears as a de-Qing resistor in parallel with the output inductor L3. If R4 is eliminated and the RFOUT HB pin is re-matched to 50 it is possible to get approximately 3dB extra power out of the device in high band mode. Ground for RF output sections. Ground for modulator, variable gain amplifier and substrate. Package Drawing -A- 0.10 C A 4.00 SQ. 0.05 C 0.90 0.85 2 PLCS 2.00 TYP 0.10 C B 0.70 0.65 0.05 0.00 2 PLCS 12° MAX 0.10 C B 2 PLCS -B- SEATING PLANE 1.87 TYP -C- 3.75 SQ. 0.10 C A Dimensions in mm. 2 PLCS 0.10 M C A B NOTES: 1. Shaded lead is Pin 1. 2 Dimension applies to plated terminal: to be measured between 0.20 mm and 0.25 mm from terminal end. 0.60 0.24 TYP 0.30 0.18 2 PIN 1 ID 0.20 R 2.25 SQ. 1.95 0.75 0.50 TYP 0.50 12 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Application Notes The baseband inputs must be driven with balanced differential signals. We suggest amplitude and phase matching <0.5dB and <0.5°. Phase or gain imbalances between the complementary input signals will cause additional distortion including some second order baseband distortion. The common-mode voltage on the baseband inputs should be well controlled at 1.2V. We suggest that the common-mode DC voltage be 1.2V+0.05V. The common-mode DC voltage is used to bias the modulator; hence, deviations from 1.2V will result in changes in the current consumption, noise and intermodulation performance. The chip is designed to be driven with a single-ended LO signal. The GC DEC and VREF output pins should be decoupled to ground. We recommend a 10nF capacitor on VREF, and a 1nF capacitor on GC DEC. The purpose of this capacitor is to filter out low frequency noise (20MHz) in the gain control lines, which may cause noise on the RF signal. The capacitor on the GC DEC line will effect the settling time response to a change in power control voltage. A 1nF capacitor equates to around a 200ns settling time, and a 0.5nF capacitor equates to a 100ns settling time. There is a trade-off between settling time and phase noise as you start to apply gain control. The ground lines for the LO sections, GNDLO and GND1, are brought out of the chip independently from the ground to the RF and modulator sections. This isolates the LO signals from the RF output sections. The GND LO pin is effectively the complementary LO input for both the high band and low band LO signals. It has significant amounts of LO signal flowing through it. This is brought out as an independent ground to try to enable the PCB board designer to isolate the LO return from the RF output sections and general chip ground. The RF output ports of the RF2483 consist of open collector architecture and require pull up inductors to the supply voltage. This, in conjunction with a DC blocking capacitor provides a simple, broadband L-match network as shown in the schematic diagram. A shunt resistor is included to control the Q of the matching network and set the modulator output power. In this case, both outputs were designed to provide 0dBm. An alternate output match containing a third harmonic trap was evaluated. This circuit uses a tapped-C matching network, whereby the shunt C provides a low impedance path near the third harmonic frequency. Although an additional component is required, the benefit of suppressing the third harmonic distortion may improve overall system intermodulation. This network has been shown to provide better than 20dB of improved suppression in high-band mode. VCC C4 100 pF L3 2.2 nH R4 180 C11 2 pF J4 RFOUT HB C12 1 pF C15 6 pF L4 10 nH R6 130 J8 RFOUT LB C13 2 pF C6 100 pF VCC Figure 1. Alternate RF output match with third-harmonic suppression. DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 13 of 34 RF2483 High Band LOHB (S11) and RFHB (S22) Parameters (VCC =2.7V, VGC =2.0V, Band Sel=2.7V, EN=2.7V, T=+25°C) Freq. (MHz) S11 MAG S11 ANG S22 MAG S22 ANG 1700 0.478 -110.8 0.903 -55.0 -56.2 1750 0.469 -112.4 0.901 1800 0.465 -115.1 0.902 -57.2 1850 0.472 -117.2 0.902 -58.0 1900 0.476 -117.6 0.904 -59.0 1950 0.465 -118.4 0.905 -59.6 2000 0.457 -120.8 0.906 -60.3 2050 0.452 -122.6 0.909 -60.9 2100 0.464 -123.0 0.916 -61.9 2150 0.453 -123.4 0.914 -64.0 2200 0.442 -125.4 0.879 -64.5 Low Band LOLB (S11) and RFLB (S22) Parameters (VCC =2.7V, VGC =2.0V, Band Sel=0V, EN=2.7V, T=+25°C ) 14 of 34 Freq. (MHz) S11 MAG S11 ANG S22 MAG S22 ANG 700 0.468 -63.2 0.92 -9.9 750 0.452 -67.6 0.915 -11.3 800 0.437 -72.1 0.913 -12.6 850 0.425 -76.6 0.908 -14.0 900 0.414 -81.2 0.905 -15.6 950 0.407 -85.6 0.901 -17.1 1000 0.402 -89.8 0.898 -18.8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Evaluation Board Schematic (700MHz to 1000MHz Low Band) (1700MHz to 2200MHz High Band) J4 RF OUT HB J8 RF OUT LB C13* DNI C12* DNI C15 1.5 pF C6 100 pF R6 180 VCC C11 1 pF C4 100 pF L4 12 nH R4 220 R5 100 P1 VCC GC P1-1 C10 1 nF L3 3.3 nH 2 P1-3 * VCC 20 * C8 1 nF 19 18 17 16 1 J1 I+ * 15 2 14 3 13 C9 1 nF CON3 C14 10 nF P2 J7 Q- J2 I- 4 12 J6 Q+ EN 5 11 BAND SEL * 6 7 8 9 10 EN GC GND + C1 1 uF BAND SEL 3 CON3 + C2 1 uF R2 1M 1 2 P2-3 GND 3 Represents "GND". P2-1 VCC 1 R1 1M * 2483400A C7 1 nF Note: Parts with * following the reference designator should not be populated on the evaluation board. R3 0 L1 6.8 nH C5 10 pF C3 100 pF L2 3.3 nH J3 LO LB J5 LO HB VCC DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 15 of 34 RF2483 Evaluation Board Schematic (2400MHz - High Band Tune Only) J4 RF OUT HB J8 RF OUT LB C13 NC C12 NC C15 1.5 pF R6 180 Ω C11 1.2 pF C4 100 pF VCC L4 12 nH R4 220 Ω VCC C6 100 pF R5 100 Ω P1 GC P1-1 C10 1 nF L3 1.8 nH 2 P1-3 * C8 1 nF * 20 19 18 17 16 1 J1 I+ * 15 2 14 3 13 CON3 C9 1 nF P2-1 J7 Q- 4 12 J6 Q+ EN 5 11 BAND SEL 6 7 8 9 10 EN P2-3 GC 1 2 GND + C1 1 uF BAND SEL 3 CON3 + C2 1 uF R2 1M P2 C14 10 nF J2 I- * GND 3 Represents "GND". VCC VCC 1 R1 1M * 2483400- C7 1 nF R3 0Ω L1 6.8 nH C3 100 pF L2 3.3 nH C5 1 pF C16 100 pF J3 LO LB J5 LO HB VCC 16 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Evaluation Board Schematic (2700MHz - High Band Tune Only) J4 RF OUT HB J8 RF OUT LB C13 NC C12 NC C15 1.5 pF R6 180 Ω C11 1.2 pF C4 100 pF VCC L4 12 nH R4 220 Ω VCC C6 100 pF R5 100 Ω P1 GC P1-1 C10 1 nF L3 1 nH 2 P1-3 * C8 1 nF * 20 19 18 17 16 1 J1 I+ * 15 2 14 3 13 CON3 C9 1 nF P2-1 J7 Q- 4 12 J6 Q+ EN 5 11 BAND SEL 6 7 8 9 10 EN P2-3 GC 1 2 GND + C1 1 uF BAND SEL 3 CON3 + C2 1 uF R2 1M P2 C14 10 nF J2 I- * GND 3 Represents "GND". VCC VCC 1 R1 1M * 2483400- C7 1 nF R3 0Ω L1 6.8 nH C3 100 pF L2 1.8 nH C5 1 pF C16 100 pF J3 LO LB J5 LO HB VCC DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 17 of 34 RF2483 Evaluation Board Build of Materials (BOM) (700MHz to 1000MHz Low Band) (1700MHz to 2200MHz High Band) Description Reference Designator PCB, 2483 RES, 1M, 5%, 1/16W, 0402 Manufacturer Manufacturer’s P/N DYNAMIC DETAILS CANADA, INC. RF2483410(B) U1 RFMD RF2483SB R1, R2 PANASONIC INDUSTRIAL CO ERJ-2GEJ105 ERJ-2GE0R00 RES, 0, 0402 R3 PANASONIC INDUSTRIAL CO RES, 100, 5%, 1/16W, 0402 R5 PANASONIC INDUSTRIAL CO ERJ-2GEJ101 RES, 180, 5%, 1/16W, 0402 R6 PANASONIC INDUSTRIAL CO ERJ-2GEJ181 RES, 220, 5%, 1/16W, 0402 R4 PANASONIC INDUSTRIAL CO ERJ-2GEJ221 ECJ-0EB1E102K CAP, 1000pF, 10%, 25V, X7R, 0402 C7, C8, C9, C10 PANASONIC INDUSTRIAL CO CAP, 1pF, +/-0.25pF, 50V, C0G, 0402 C11 PANASONIC INDUSTRIAL CO ECJ-0EC1H010C CAP, 1.5pF, +/-0.25pF, 50V, C0G, 0402 C15 PANASONIC INDUSTRIAL CO ECJ-0EC1H1R5C CAP, 10000pF, 10%, 16V, X7R, 0402 C14 PANASONIC INDUSTRIAL CO ECJ-0EB1C103K CAP, 10pF, +/-0.5pF, 50V, C0G, 0402 C5 PANASONIC INDUSTRIAL CO ECJ-0EC1H100D CAP, 100pF, 5%, 50V, C0G, 0402 C3, C4, C6 PANASONIC INDUSTRIAL CO ECJ-0EC1H101J CAP, 1uF, 20%, 25V, TANT-A C1, C2 AVX Corporation TAJA105M025R IND, 3.3nH, +/-0.3nH, M/L, 0402 L2, L3 Taiyo Yuden (USA), Inc. LG HK10053N3S-T IND, 6.8nH, 5%, M/L, 0402 L1 Taiyo Yuden (USA), Inc. LG HK10056N8J-T Taiyo Yuden (USA), Inc. LG HK100512NJ-T IND, 12nH, 5%, M/L, 0402 L4 NOT POPULATED ITEM-1 FOR PCBA BOM C12*, C13* CONN, HDR, ST, PLRZD, 3-PIN, 0.100" P1, P2 ITW Pancon MPSS100-3-C CONN, SMA END LNCH, MINI, RND, 0.062" J1, J2, J3, J4, J5, J6, J7, J8 JOHNSON COMPONENTS, INC. 142-0711-821 DUMMY PART Notes: 1. Parts with * following the Reference Designator should not be populated on PCBA. 2. RFMD devices (DUT) may require baking per IPC/JEDEC J-STD-020 for a minimum of 24 hours at 125 +5/-0 deg C. Assembly must take place within 12 hours of bake completion. 3. Manufacturers' P/Ns are subject to change by the manufacturers following the issue of this document and are thereby included for reference only. Contact RFMD Corporate Engineering Materials with questions regarding specific Manufacturers' P/Ns. 18 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Evaluation Board Assembly Layout (Board Size 2.0” x 2.0”) Board Thickness 0.062”, Board Material FR-4, Multi-Layer DS110505 Top Inner 1 Inner 2 Back 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 19 of 34 RF2483 20 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Typical Performance: 1700MHz to 2200MHz Application Circuit High Band Modulator Performance versus Frequency High Band Modulator Performance versus LO Power LO=0dBm, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P LO=1900MHz, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P 0.0 0.0 0.0 0.0 Carrier Suppression -20.0 -30.0 -30.0 -40.0 -50.0 -60.0 1700.0 1800.0 1900.0 2000.0 Frequency (MHz) 3rd Harmonic of Modulation Output Power -20.0 -30.0 -40.0 -40.0 -40.0 -50.0 -50.0 -50.0 -60.0 -10.0 -60.0 -8.0 -6.0 -4.0 -2.0 0.0 LO Power (dBm) 2.0 4.0 6.0 8.0 High Band Output Power versus Baseband Signal Level High Band Output Noise 20MHz Offset versus LO Power VCC=2.7V, LO=1900MHz 0dBm, IQ=100kHz 1.2VDC VCC=2.7V, LO=1900MHz, GC=2V -152.0 -20.0 -30.0 -60.0 2200.0 2100.0 -10.0 Sideband Suppression Sideband Suppression (dBc) 3rd Harmonic (dBc) Output Power -20.0 -10.0 Output Power (dBm) Carrier Suppression (dBc) -10.0 3rd Harmonic of Modulation Sideband Suppression (dBc) 3rd Harmonic (dBc) Sideband Suppression -10.0 Output Power (dBm) Carrier Suppression (dBc) Carrier Suppression 20.0 1.0 10.0 0.0 Output Noise 20MHz Offset, I&Q = 800mVpp 1.2Vdc Output Noise 20MHz Offset, I&Q = 0 mVpp 1.2Vdc -1.0 Output Power I&Q = 800mVpp 1.2Vdc -155.0 -2.0 -156.0 -3.0 -157.0 -4.0 Output Power (dBm) -154.0 0.0 -10.0 Output Power (dBm) Output Noise (dBm/Hz) -153.0 -20.0 -30.0 -40.0 -50.0 GC = 2.0V -60.0 GC = 1.5V GC = 1.0V -70.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 GC = 0.5V -80.0 -5.0 -158.0 10.0 8.0 100.0 VCC=2.7V, LO=0dBm, IQ=900kHz and 1100kHz at 1.2VDC VCC=2.7V, LO=1900MHz, GC=2V 30.00 5.0 -130.0 Output Noise 20MHz Offset, I&Q = 800mVpp 1.2Vdc 0.0 20.00 Output Noise 20MHz Offset, I&Q = 0mVpp 1.2Vdc -5.0 -145.0 -10.0 -150.0 -15.0 -155.0 -20.0 -160.0 -25.0 10.00 OIP3 (dBm) Output Power I&Q=800mVpp 1.2Vdc Output Power (dBm) Output Noise (dBm/Hz) -140.0 10000.0 High Band Output IP3 versus Gain Control High Band Output Noise 20MHz Offset versus Gain Control -135.0 1000.0 Baseband Signal Level (mVpp) LO Power (dBm) 0.00 -10.00 1700MHz 1800MHz -20.00 1900MHz -30.0 -165.0 -35.0 -170.0 0.0 DS110505 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 2000MHz -30.00 0.0 0.5 1.0 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1.5 2.0 2.5 21 of 34 RF2483 Typical Performance: 1700MHz to 2200MHz Application Circuit High Band Output Power versus Gain Control High Band Output Power versus Gain Control LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC 5.0 0.00 0.0 -5.00 -5.0 -10.00 -10.0 Output Power (dBm) Output Power (dBm) LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC 5.00 -15.00 -20.00 -25.00 -15.0 -20.0 -25.0 Vcc = 2.7V -30.00 -30.0 Temp = -40°C, Vcc=2.7V Vcc = 3.0V -35.00 Temp = +25 °C, Vcc=2.7V -35.0 Vcc = 3.3V -40.00 Temp = +85 °C, Vcc=2.7V -40.0 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 0.5 1.0 1.5 2.0 High Band Output Power versus Gain Control High Band Carrier Suppression versus Gain Control VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC 5.0 0.0 1700MHz 0.0 1800MHz -10.0 1900MHz -5.0 Carrier Suppression (dBc) 2000MHz -10.0 Output Power (dBm) 2.5 Gain Control (V) -15.0 -20.0 -25.0 -20.0 -30.0 -40.0 1700MHz -30.0 1800MHz -50.0 1900MHz -35.0 2000MHz -40.0 -60.0 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 High Band Sideband Suppression versus Gain Control 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 High Band Modulation's 3rd Harmonic versus Gain Control VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.0 0.0 1700MHz 3rd Harmonic of Modulation Suppression (dBc) 1800MHz -10.0 1900MHz Sideband Suppression (dBc) 2000MHz -20.0 -30.0 -40.0 -50.0 -60.0 1700MHz 1800MHz 1900MHz -20.0 2000MHz -30.0 -40.0 -50.0 -60.0 0.0 0.5 1.0 1.5 Gain Control (V) 22 of 34 -10.0 2.0 2.5 0.0 0.5 1.0 1.5 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2.0 2.5 DS110505 RF2483 Typical Performance: 1700MHz to 2400MHz Application Circuit High Band Sideband Suppression versus Gain Control High Band Carrier Suppression versus Gain Control LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.0 0.0 Temp = -40°C, Vcc=2.7V Temp = -40°C, Vcc=2.7V Temp = +25 °C, Vcc=2.7V Temp = +25 °C, Vcc=2.7V -10.0 Temp = +85 °C, Vcc=2.7V Temp = +85 °C, Vcc=2.7V Sideband Suppression (dBc) Carrier Suppression (dBc) -10.0 -20.0 -30.0 -40.0 -50.0 -20.0 -30.0 -40.0 -50.0 -60.0 -60.0 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 High Band Sideband Suppression versus Gain Control 1.5 2.0 2.5 High Band Carrier Suppression versus Gain Control VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.00 Vcc=2.7V Vcc=2.7V Vcc=3.0V Vcc=3.0V -10.00 -10.00 Vcc=3.3V Carrier Suppression (dBc) Vcc=3.3V Sideband Suppression (dBc) 1.0 Gain Control (V) 0.00 -20.00 -30.00 -40.00 -50.00 -20.00 -30.00 -40.00 -50.00 -60.00 -60.00 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 High Band Modulation's 3rd Harmonic versus Gain Control 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 High Band Output IP3 versus Gain Control LO=1900MHz 0dBm, IQ=100kHz 800mVp-p 1.2VDC LO=1900MHz 0dBm, IQ=900kHz and 1100kHz at 1.2VDC 0.00 25.0 Vcc=3.0V Vcc=3.0V -10.00 Vcc=2.7V 20.0 Vcc=2.7V 15.0 Vcc=3.3V Vcc=3.3V 10.0 -20.00 Output IP3 (dBm) 3rd Harmonic of Modulation Suppression (dBc) 0.5 -30.00 5.0 0.0 -5.0 -10.0 -40.00 -15.0 -20.0 -50.00 -25.0 -60.00 -30.0 0.0 DS110505 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 0.5 1.0 1.5 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2.0 2.5 23 of 34 RF2483 Typical Performance: 700MHz to 1000MHz Application Circuit Low Band Modulator Performance versus Frequency Low Band Modulator Performance versus LO Power LO=0dBm, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P LO=900MHz, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P 0.00 0.00 0.00 Carrier Suppression Output Power -20.00 -20.00 -40.00 -50.00 -50.00 -50.00 -60.00 -60.00 -60.00 -70.00 1200.0 -70.00 -40.00 -50.00 -60.00 1100.0 -20.00 Output Power -40.00 -40.00 900.0 1000.0 Frequency (MHz) -20.00 -30.00 -30.00 800.0 3rd Harmonic of Modulation -30.00 -30.00 -70.00 700.0 -70.00 -10.0 -8.0 -6.0 2.0 4.0 6.0 8.0 20.0 1.0 10.0 Output Noise 20MHz Offset, I&Q = 800mVpp 1.2Vdc 0.0 0.0 Output Noise 20MHz Offset, I&Q = 0 mVpp 1.2Vdc -1.0 -155.00 -2.0 -156.00 -3.0 Output Power (dBm) -10.0 Output Power I&Q=800mVpp 1.2Vdc Output Power (dBm) Output Noise (dBm/Hz) -2.0 0.0 LO Power (dBm) VCC=2.7V, LO=900MHz, IQ=100kHz 1.2VDC VCC=2.7V, LO=900MHz, GC=2V -154.00 -4.0 Low Band Output Power versus Baseband Signal Level Low Band Output Noise 20MHz Offset versus LO Power -152.00 -153.00 -10.00 Sideband Suppression Output Power (dBm) Carrier Suppression (dBc) Output Power (dBm) Carrier Suppression (dBc) 3rd Harmonic of Modulation Carrier Suppression -10.00 -10.00 Sideband Suppression Sideband Suppression (dBc) 3rd Harmonic (dBc) -10.00 Sideband Suppression (dBc) 3rd Harmonic (dBc) 0.00 -20.0 -30.0 -40.0 -50.0 GC = 2.0V -60.0 -4.0 -157.00 GC = 1.5V GC = 1.0V -70.0 GC = 0.5V -80.0 -5.0 -158.00 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 LO Power (dBm) 2.0 4.0 6.0 10.0 8.0 VCC=2.7V, LO=0dBm, IQ=900kHz and 1100kHz at 1.2VDC VCC=2.7V, LO=900MHz 0dBm 30.00 5.0 -130.0 700MHz Output Noise 20MHz Offset, I&Q = 800mVpp 1.2Vdc 0.0 20.00 -5.0 10.00 800MHz 900MHz Output Noise 20MHz Offset, I&Q = 0 mVpp 1.2Vdc -145.0 -10.0 -150.0 -15.0 -155.0 -20.0 -160.0 -25.0 -165.0 -30.0 OIP3 (dBm) 1000MHz Output Power I&Q=800mVpp 1.2Vdc Output Power (dBm) Output Noise (dBm/Hz) -140.0 10000.0 Low Band Output IP3 versus Gain Control Low Band Output Noise at 20MHz Offset versus GC -135.0 100.0 1000.0 Baseband Signal Level (mVpp) 0.00 -10.00 -20.00 -30.00 -35.0 -170.0 0.0 24 of 34 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 -40.00 0.0 0.5 1.0 1.5 2.0 2.5 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Typical Performance: 700MHz to 1000MHz Application Circuit Low Band Output Power versus Gain Control Low Band Output Power versus Gain Control LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC 5.00 5.00 0.00 0.00 -5.00 -5.00 -10.00 Output Power (dBm) Output Power (dBm) -10.00 -15.00 -20.00 -25.00 -15.00 -20.00 -25.00 -30.00 -30.00 Temp = -40°C, Vcc=2.7V -35.00 -35.00 Vcc=2.7V Temp = +25 °C, Vcc=2.7V Vcc=3.0V -40.00 -40.00 Temp = +85 °C, Vcc=2.7V Vcc=3.3V -45.00 -45.00 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 0.0 2.5 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 Low Band Carrier Suppression versus Gain Control Low Band Output Power versus Gain Control VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.0 5.0 700MHz 0.0 800MHz -10.0 900MHz 1000MHz Carrier Suppression (dBc) Output Power (dBm) -5.0 -10.0 -15.0 -20.0 -25.0 -20.0 -30.0 -40.0 -30.0 700MHz -35.0 -50.0 800MHz 900MHz -40.0 1000MHz -60.0 -45.0 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 0.0 2.5 1.0 1.5 2.0 2.5 Gain Control (V) Low Band Modulation's 3rd Harmonic versus Gain Control Low Band Sideband Suppression versus Gain Control VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.0 0.5 0.0 700MHz 700MHz 3rd Harmonic of Modulation Suppression (dBc) 900MHz 1000MHz Sideband Suppression (dBc) 800MHz -10.0 800MHz -10.0 -20.0 -30.0 -40.0 -50.0 900MHz 1000MHz -20.0 -30.0 -40.0 -50.0 -60.0 -70.0 -60.0 -80.0 0.0 DS110505 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 0.5 1.0 1.5 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2.0 2.5 25 of 34 RF2483 Typical Performance: 700MHz to 1000MHz Application Circuit Low Band Sideband Supperssion versus Gain Control Low Band Carrier Suppression versus Gain Control LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.00 0.00 Temp = -40°C, Vcc=2.7V Temp = -40°C, Vcc=2.7V Temp = +25 °C, Vcc=2.7V -10.00 -10.00 Temp = +25 °C, Vcc=2.7V Sideband Suppression (dBc) Carrier Suppression (dBc) Temp = +85 °C, Vcc=2.7V -20.00 -30.00 -40.00 Temp = +85 °C, Vcc=2.7V -20.00 -30.00 -40.00 -50.00 -50.00 -60.00 -60.00 -70.00 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 Low Band Carrier Suppression versus Gain Control 1.0 1.5 Gain Control (V) 2.0 2.5 Low Band Sideband Suppression versus Gain Control VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.00 0.00 Vcc=2.7V Vcc=2.7V Vcc=3.0V -10.00 Vcc=3.0V -10.00 Vcc=3.3V Vcc=3.3V Sideband Suppression (dBc) Carrier Suppression (dBc) 0.5 -20.00 -30.00 -40.00 -20.00 -30.00 -40.00 -50.00 -50.00 -60.00 -60.00 -70.00 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 Low Band Modulation's 3rd Harmonic versus Gain Control 0.5 1.0 Gain Control (V) 1.5 2.0 2.5 Low Band Output IP3 versus Gain Control LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC LO=900MHz 0dBm, IQ=900kHz and 1100kHz at 1.2VDC 0.00 30.0 Vcc=3.0V 20.0 Vcc=3.3V -20.00 10.0 OIP3 (dBm) 3rd Harmonic of Modulation Suppression (dBc) Vcc=2.7V -10.00 -30.00 -40.00 0.0 -10.0 -50.00 -20.0 -60.00 -30.0 -70.00 -40.0 Vcc=2.7V Vcc=3.0V Vcc=3.3V 0.0 26 of 34 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 0.5 1.0 1.5 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2.0 2.5 DS110505 RF2483 Typical Performance: 700MHz to 1000MHz Application Circuit for Low Band; 1700MHz to 2200MHz Application Circuit for High Band Low Band Current Consumption versus Gain Control High Band Current Consumption versus Gain Control 160.00 140.0 140.00 120.0 120.00 100.0 100.00 Current (mA) Current (mA) LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC 160.0 80.0 60.0 80.00 60.00 Temp = -40°C, Vcc=2.7V 40.0 40.00 Temp = -40°C, Vcc=2.7V Temp = +25 °C, Vcc=2.7V Temp = +25 °C, Vcc=2.7V Temp = +85 °C, Vcc=2.7V 20.0 20.00 Temp = +85 °C, Vcc=2.7V 0.0 0.00 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 2.5 0.0 High Band Current Consumption versus Gain Control 1.0 1.5 Gain Control (V) 2.0 160.0 140.0 140.0 120.0 120.0 100.0 100.0 Current (mA) 160.0 80.0 LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC 80.0 60.0 60.0 Vcc=2.7V 40.0 Vcc=2.7V 40.0 Vcc=3.0V Vcc=3.0V 20.0 Vcc=3.3V 20.0 Vcc=3.3V 0.0 0.0 0.0 0.5 1.0 1.5 Gain Control (V) 2.0 0.0 2.5 0.5 1.0 1.5 Gain Control (V) 2.0 0.0 LO LB Port LO HB Port RFOUT LB Port RFOUT HB Port -5.0 Return Loss (dB) Return Loss (dB) -5.0 -10.0 -15.0 -20.0 -25.0 1700.0 2.5 Low Band Return Loss versus Frequency High Band Return Loss versus Frequency 0.0 DS110505 2.5 Low Band Current Consumption versus Gain Control LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC Current (mA) 0.5 -10.0 -15.0 -20.0 1750.0 1800.0 1850.0 Frequency (MHz) 1900.0 1950.0 2000.0 -25.0 700.0 750.0 800.0 850.0 Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 900.0 950.0 1000.0 27 of 34 RF2483 Typical Performance: 2400MHz Application Circuit High Band Modulator Performance versus Frequency High Band Modulator Performance versus LO Power LO=3dBm, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P 10 10 0 0 0 0 Output Power -10 -20 -30 -30 -40 -40 -50 -50 -60 -60 -70 -80 2200 2250 2300 2350 2400 2450 2500 2550 Output Power (dBm) Carrier Suppression (dBc) 3rd Harmonic of Modulation Sideband Suppression (dBc) 3rd Harmonic (dBc) Sideband Suppression Output Power -10 Carrier Suppression -20 -10 Carrier Suppression Sideband Suppression -20 -20 3rd Hrmonic of Modulation -30 -30 -40 -40 -50 -50 -70 -60 -60 -80 2600 -70 Sideband Suppression (dBc) 3rd Harmonic (dBc) 10 -10 Output Power (dBm) Carrier Suppression (dBc) LO=2400MHz, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P 10 -70 -10 -8 -6 -4 -2 0 2 4 6 8 LO Power (dBm) Frequency (MHz) High Band Output Power versus Gain Control High Band Output Power versus Gain Control LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC 5 5 Vcc=2.7V 0 0 -5 -5 -10 -10 Output Power (dBm) Output Power (dBm) Vcc=3.3V -15 -20 -15 -20 -25 -25 -30 -30 -35 -35 Temp = +25 °C, Vcc=2.7V Temp = -40°C, Vcc=2.7V Temp = +85 °C, Vcc=2.7V -40 -40 0 0.5 1 1.5 2 0 2.5 0.5 High Band Output Power versus Gain Control 0 -5 -5 -10 Carrier Suppression (dBc) Output Power (dBm) 2 2.5 VCC=2.7V, LO=3dBm, IQ=100kHz 800mVP-P 1.2VDC 0 -10 -15 -20 -30 1.5 High Band Carrier Suppression versus Gain Control VCC=2.7V, LO=3dBm, IQ=100kHz 800mVP-P 1.2VDC 5 -25 1 Gain Control (V) Gain Control (V) 2200MHz 2300MHz 2400MHz 2500MHz 2200MHz 2300MHz 2400MHz 2500MHz 2600MHz -15 -20 -25 -30 -35 2600MHz -35 -40 -40 -45 0 0.5 1 1.5 Gain Control (V) 28 of 34 2 2.5 0 0.5 1 1.5 2 2.5 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Typical Performance: 2400MHz Application Circuit High Band Sideband Suppression versus Gain Control High Band Modulation's 3rd Harmonic versus Gain Control VCC=2.7V, LO=3dBm, IQ=100kHz 800mVP-P 1.2VDC VCC=2.7V, LO=3dBm, IQ=100kHz 800mVP-P 1.2VDC 0 Sideband Suppression (dBc) -10 2200MHz 2300MHz 2400MHz 2500MHz 3rd Harmonic of Modulation Suppression (dBc) 0 2600MHz -20 -30 -40 -50 -10 -20 2200MHz 2300MHz 2400MHz 2500MHz 2600MHz -30 -40 -50 -60 -70 -60 -80 0 0.5 1 Gain Control (V) 1.5 2 2.5 0 High Band Carrier Suppression versus Gain Control 0.5 1 Gain Control (V) 1.5 2 2.5 High Band Sideband Suppression versus Gain Control LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC 0 0 Temp = +25 °C, Vcc=2.7V Temp = +25 °C, Vcc=2.7V -10 -10 Temp = -40°C, Vcc=2.7V Temp = +85 °C, Vcc=2.7V Sideband Suppression (dBc) Carrier Suppression (dBc) Temp = -40°C, Vcc=2.7V Temp = +85 °C, Vcc=2.7V -20 -30 -20 -30 -40 -40 -50 -50 -60 0 0.5 1 Gain Control (V) 1.5 2 2.5 0 1 1.5 2 2.5 Gain Control (V) High Band Sideband Suppression versus Gain Control High Band Carrier Suppression versus Gain Control VCC=2.7V, LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC VCC=2.7V, LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC 0 0.5 0 -5 -10 Vcc=2.7V Vcc=3.3V Sideband Suppression (dBc) Carrier Suppression (dBc) -10 -15 -20 -25 Vcc=2.7V Vcc=3.3V -20 -30 -40 -30 -50 -35 -60 -40 0 0.5 1 1.5 Gain Control (V) DS110505 2 2.5 0 0.5 1 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1.5 2 2.5 29 of 34 RF2483 Typical Performance: 2400MHz Application Circuit High Band Modulation's 3rd Harmonic versus Gain Control LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC 3rd Harmonic of Modulation Suppression (dBc) 0 -10 Vcc=2.7V -20 Vcc=3.3V -30 -40 -50 -60 -70 -80 0 30 of 34 0.5 1 Gain Control (V) 1.5 2 2.5 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Typical Performance: 2700MHz Application Circuit High Band Output Power versus Gain Control High Band Output Power versus Gain Control LO=2700MHz 0dBm, IQ=100kHz 800mVp-p 1.2VDC LO=2700MHz 0dBm, IQ=100kHz 800mVp-p 1.2VDC 5.0 5.0 Vcc=2.7V 0.0 Temp = +25c, Vcc=2.7V 0.0 Vcc=3.3V Temp = -40c, Vcc=2.7V -5.0 Output Power (dBm) Output Power (dBm) -5.0 -10.0 -15.0 -20.0 -25.0 -15.0 -20.0 -25.0 -30.0 -30.0 -35.0 -35.0 -40.0 Temp = +85c, Vcc=2.7V -10.0 -40.0 0 0.5 1 1.5 2 2.5 0 0.5 Gain Control (V) 1.5 2 2.5 Gain Control (V) High Band Output Power versus Gain Control High Band Carrier Suppression versus Gain Control Vcc=2.7V, LO=0dBm, IQ=100kHz 800mVp-p 1.2VDC Vcc=2.7v, LO=0dBm, IQ=100kHz 800mVp-p 1.2VDC 0.0 5.0 2500MHz 0.0 2500MHz -5.0 Carrier Suppression (dBc) 2600MHz -5.0 Output Power (dBm) 1 2700MHz -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 2600MHz -10.0 2700MHz -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 -40.0 -50.0 0 0.5 1 1.5 2 2.5 Gain Control (V) 0 0.5 1 1.5 2 2.5 Gain Control (V) High Band Sideband Suppression versus Gain Control Vcc=2.7V, LO= 0dBm, IQ=100kHz 800mVp-p 1.2VDC 0.0 Sideband Suppression (dBc) 2500MHz -10.0 2600MHz 2700MHz -20.0 -30.0 -40.0 -50.0 -60.0 0 0.5 1 1.5 2 2.5 Gain Control (V) DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 31 of 34 RF2483 Typical Performance: 2700MHz Application Circuit High Band Carrier Suppression versus Gain Control High Band Sideband Suppression versus Gain Control LO=2700MHz, LO=0dBm, IQ=100kHz 800mVp-p 1.2VDC LO=2700MHz, LO= 0dBm, IQ=100kHz 800mVp-p 1.2VDC 0.0 Temp = +25c, Vcc=2.7V Temp = -40c, Vcc=2.7V Temp = +85c, Vcc=2.7V -10.0 Sideband Suppression (dBc) Carrier Suppression (dBc) 0.0 -20.0 -30.0 -40.0 -50.0 Temp = +25c, Vcc=2.7V Temp=-40c, Vcc=2.7V Temp =+85c, Vcc=2.7V -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 0 0.5 1 1.5 2 0 2.5 0.5 Gain Control (V) 1.5 2 2.5 Gain Control (V) High Band Sideband Suppression versus Gain Control High Band Carrier Suppression versus Gain Control LO=2700MHz, LO= 0dBm, IQ=100kHz 800mVp-p 1.2VDC LO=2700MHz, LO=0dBm, IQ=100kHz 800mVp-p 1.2VDC 0.0 0.0 Vcc=2.7V Sideband Suppression (dBc) Vcc=2.7V -5.0 Carrier Suppression (dBc) 1 Vcc=3.3V -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -10.0 Vcc=3.3V -20.0 -30.0 -40.0 -50.0 -45.0 -60.0 -50.0 0 0.5 1 1.5 2 0 2.5 0.5 LO=2700MHz, 0dBm, IQ=100kHz 800mVp-p 1.2VDC 120 100 100 Current (mA) Current(mA) 140 120 80 60 2.5 80 60 Vcc2.7V 40 Temp = -40C, Vcc=2.7V Vcc=3.0V Temp = +25C, Vcc=2.7V 20 2 LO=2700MHz, 0dBm, IQ=100kHz 800mVP-P 1.2VDC 160 140 40 1.5 High Band Current Consumption versus Gain Control High Band Current Consumption versus Gain Control 160 1 Gain Control (V) Gain Control (V) 20 Temp = +85C, Vcc=2.7V Vcc=3.3V 0 0 0 0.5 1 1.5 Gain Control (V) 32 of 34 2 2.5 0 0.5 1 1.5 2 2.5 Gain Control (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505 RF2483 Typical Performance: 2700MHz Application Circuit High Band Modulator Performance versus LO Power High Band Return Loss versus Frequency 0.0 LO=2700MHz, Vcc=2.7V, GC=2V, IQ=100kHz 800mVp-p 10 10 LO HB port Output Power(dBm) Carrier Suppression (dBc) Return Loss (dB) 0 -10.0 -15.0 -20.0 -25.0 0 Output Power(dBm) -10 -10 Carrier Suppresion (dBc) 3rd Harmonic (dBc) -20 -20 Sideband Suppression (dBc) -30 -30 -40 -40 -50 -50 -60 -60 -30.0 Sideband Suppression (dBc) 3rd Harmonic (dBc) RFOUT HB Port -5.0 -35.0 2400 2500 2600 2700 2800 2900 3000 -70 -70 -10 Frequency(MHz) -8 -6 -4 -2 0 2 4 6 8 LO Power (dBm) 3rd Harmonic of Modulation Suppression (dBc) High Band Modulation's 3rd Harmonic versus Gain Control - LO=2700MHz 0dBm, IQ=100kHz 800mVp-p 1.2VDC 0 -10 Vcc=2.7V Vcc=3.3V -20 -30 -40 -50 -60 -70 0 0.5 1 1.5 2 2.5 Gain Control (V) DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 33 of 34 RF2483 RoHS* Banned Material Content RoHS Compliant: Yes Package total weight in grams (g): 0.042 Compliance Date Code: 0522 Bill of Materials Revision: - Pb Free Category: e3 Bill of Materials Parts Per Million (PPM) Pb Cd Hg Cr VI PBB PBDE Die 0 0 0 0 0 0 Molding Compound 0 0 0 0 0 0 Lead Frame 0 0 0 0 0 0 Die Attach Epoxy 0 0 0 0 0 0 Wire 0 0 0 0 0 0 Solder Plating 0 0 0 0 0 0 This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted above. * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 34 of 34 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110505