ROHS COMPLIANT Thin Film Design Rules SUBSTRATES: Material, K value Standard X, Y(inches) Standard Thickness(mils) Available Thickness(mil) Aluminum Nitride, 9.0 2x2 5, 10, 15, 25, 40 5-50 Alumina, 9.9 2x2 5, 10, 15, 20 5-25 Quartz, 3.8 2 inch round 10 5-25 X7R B, 1200 1x1 5, 10 4-25 X7R X, 2700 1x1 5, 10 4-25 X7R T, 4000 1x1 7, 10 4-25 GBBL A, 20,000 Max Part Dim: 0.2x0.2 7, 10 5-15 GBBL A, 60,000 Max Part Dim: 0.2x0.2 7, 10 5-15 NOTE: On Alumina and Aluminum Nitride, typical surface is as-fired condition, polish to 2 µ-inch is available METAL FILMS: Metal Deposition Method Titanium(Ti) Sputter Deposition Titanium Nitride(TiN) Reactive Sputter Dep Titanium Tungsten(TiW) Sputter Deposition TiW Nitride(TiWN) Reactive Sputter Dep Nickel(Ni) Sputter Deposition Nickel(Ni) Plating Gold(Au) Sputter Deposition Gold(Au) Plating Gold/Tin(AuSn-80/20) Plating Copper(Cu) Sputter Deposition Tantalum(Ta) Sputter Deposition Tantalum Nitride(TaN) Reactive Sputter Dep Others available upon request Thickness(Angstroms) Typical Use 200-1,000 200-1,000 200-2,000 200-2,000 200-2,000 5,000-25,000 1,000-10,000 5,000-75,000 4,000-40,000 1,000-20,000 200-5,000 500-5,000 Barrier, Adhesion Barrier, Adhesion Barrier, Adhesion Barrier, Adhesion Barrier for solder die attach Barrier for solder die attach Die attach, Wirebond Die attach, Wirebond Eutectic High Rel. solder Conductor Barrier, Adhesion Resistor(Typical 1000A, 50Ω/□) FEATURE DIMENSIONS: Feature Available Min. Width(µm)* 75 Laser drilled holes Plated Vias 75 Filled Vias 50Ω/□ Resistor 100 25 Conductor Line 25 Space 25 AuSn(80/20) plating 25 2nd layer alignment *-> µm = microns = 10-6m +/-7 TITLE 4001 Calle Tecate CAMARILLO, CA 93012 PRESIDENT J. Petrinec IINITIATOR T. McKnelly DATE 12/5/2013 DATE 12/5/2013 ENG. MANAGER T. McKnelly QA MANAGER B. Weikal DATE 12/5/2013 DATE 12/5/2013 THIN FILM DESIGN RULES PART NO. DW G. SCALE NA DW G NO. NONE SHEET 1 OF 1 REV