Infrared Light Emitting Diode in SMD Plastic Package OP270 Series • • • • • 890nm Wavelength Narrow Beam Angle High Power 1.9mm Water Clear Plastic Package Four Lead Configurations Description: The OP270 series are GaAlAs infrared LEDs mounted in a clear plastic SMT packages. The devices incorporate an integral molded lens which enables a narrow beam angle and provides an even emission pattern. This series is available with four lead configurations and is compatible with most automated mounting equipment. The OP270 Series LEDs are mechanically and spectrally matched to the OP570 series phototransistors. Applications • • • • • • Non-Contact Position Sensing Datum detection Machine automation Optical encoders IrDA Reflective and Transmissive Sensors Relative Radiant Intensity vs. Angular Displacement OP272 Relative Radiant Intensity 100% OP271 80% OP273 60% 40% OP270 20% 0% -90 -60 -30 0 30 60 90 Angular Displacement (Degrees) Pb RoHS Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com A subsidiary of TT electronics plc SMD Infrared LED OP270 Series Absolute Maximum Ratings (TA = 25o C unless otherwise noted) PARAMETER SYMBOL MAXIMUM UNITS Continuous Forward Current IF 50 mA Power Dissipation Pd 130 mW Reverse Voltage IR 2 V Peak Forward Current (1μs pulse width, 300 pps) IFP 1 A TSOL 260º C Operating Temperature Range TOPR -40ºC to +85ºC Storage Temperature Range TSTG -40ºC to +100ºC Lead Soldering Temperature (1.6mm to epoxy for 5 sec.) Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL Ee(APT) MIN Apertured Radiant Incidence TYP MAX UNITS 1.5 mW/cm 2 CONDITIONS IF = 20mA VF Forward Voltage 1.5 V IF = 20mA IR Reverse Current 100 µA VR = 2.0V λP Peak Emission Wavelength 890 nm IF = 10mA ΘHP Emission Angle at Half Power Points 25 Deg. IF = 20mA tr, tf Rise and Fall Time 500 ns (3) IF(PEAK) = 100mA, PW = 10µs, 10% D.C. Ee(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 0.590” (14.99mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. Relative Radiant Intensity vs. Forward Current vs. Temperature 350% Relative Radiant Intensity 1.5 Normalized at IF = 20mA, TA = 20°C. Temperatures stepped in 20°C Increments 300% Forward Voltage vs. Forward Current vs. Temperature -40°C Temperatures stepped in 20 °C Increments -40°C 1.4 250% 200% 150% 100°C 100% Forward Voltage (V) 3. PARAMETER 1.3 100°C 1.2 1.1 50% 0 10 20 30 40 50 Forward Current (mA) OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com 1.0 0 10 20 30 40 50 Forward Current (mA) Issue A.3 07/08 Page 2 of 3 SMD Infrared LED OP270 Series OP270 OP271 1 2 PIN 1 2 LED A K OP272 PIN 1 2 LED A K PIN LED 1 A 2 K OP273 1 PIN 1 2 LED A K OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com 2 Issue A.3 07/08 Page 3 of 3