Technical Note LTE Performance vs. Output Power Model: GVA-82+ AN-60-047 LTE Base Station MMIC Amplifier Mini-Circuits GVA-82+ High Dynamic Range MMIC Amplifier is designed specifically for applications which require high linear performance, particularly wideband, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM. Figure 1 (GVA‐82+ Test Board) The GVA-82+ provides typically +38 dBm OIP3 which translates to high linear performance in multi-carrier and complex signal environments such as LTE supporting ACLR_1 Measurements of better than -60 dBc at +8 dBm output. The GVA-82+ is characterized using a high peak-toaverage ratio OFDM signal used for next generation LTE within the 700MHz Downlink Band. Device: GVA‐82+ Test board Supply Voltage: 5V, 105 mA Temperature: 25C Note: All data is referenced to the test board connectors LTE FDD Downlink (2009-3), Full filled 64 QAM,10MHz (50 RB) Fc = 700 MHz CCDF 10% 1.0% 0.1% 0.01% 0.001% 0.0001% PAR 3.63 dB 6.67 dB 8.48 dB 10.06 dB 10.90 dB 11.05 dB CCDF: Complementary Cumulative Distribution Function PAR: Peak to Average Ratio DC Power Supply Test Signal: DUT Configuration: Measurement Setup Bias Tee DC Block Agilent N5182A MXG GVA‐82+ (Mounted on Characterization Test Board: TB‐313+) Summary Data ACLR_1 vs. Output Power Agilent MXA EVM vs. Output Power LTE 700MHz Full Filled 64 QAM Waveform LTE 700MHz Full Filled 64 QAM Waveform 0 -10 -20 -30 -40 -50 -60 -70 -80 20 EVM-Avg EVM-Peak 15 EVM(%) ACLR (dBc) 50 Ohm Test Cable 50 Ohm Test Cable 10 5 0 -5 +0 +5 +10 +15 Output Power(dBm) AN‐60‐047 Rev.: A M150261 (04/14/15) File: AN60047.doc +20 -5 +0 +5 +10 +15 Output Power(dBm) +20 Page 1 of 3 Technical Note LTE Performance vs. Output Power Model: GVA-82+ AN-60-047 Table 1 Data of ACLR and EVM vs. Output Power Output Power (carrier) dBm ACLR (dBc) ACLR2 LOW 20MHz -43.3 -46.3 -49.3 -52.1 -54.8 -57.6 -60.1 -61.4 -62.2 -63.1 -63.7 -63.9 -63.8 -63.7 -63.7 -63.7 -63.7 ACLR1 LOW 10MHz -22.0 -24.9 -28.0 -31.2 -34.5 -38.3 -42.5 -44.7 -46.8 -51.5 -56.5 -61.3 -62.7 -63.1 -63.3 -63.5 -63.7 ACLR1 HIGH 10MHz -21.8 -24.8 -27.9 -31.2 -34.6 -38.5 -42.7 -45.0 -47.1 -51.9 -56.6 -61.4 -62.6 -63.1 -63.3 -63.4 -63.5 EVM (%) ACLR2 HIGH 20MHz -43.2 -46.2 -49.1 -52.0 -54.8 -57.5 -60.1 -61.1 -61.9 -63.1 -63.5 -63.7 -63.7 -63.7 -63.8 -63.7 -63.7 RMS Peak +19 46.187 110.03 +18 37.880 97.65 +17 10.288 93.60 +16 6.188 19.99 +15 4.068 14.46 +14 2.596 10.11 +13 1.597 7.19 +12.29 1.258 6.03 +12 0.991 4.86 +11 0.678 3.06 +10 0.559 1.99 +8 0.493 1.86 +6 0.488 1.73 +4 0.486 1.75 +2 0.482 1.70 +0 0.477 1.74 -5 0.476 1.75 Note: For output powers less than -5dBm, ACLR measurement accuracy is limited by the dynamic range of the test equipment. Figure 2 ACLR Plot at Output Power of +12.29 dBm AN‐60‐047 Rev.: A M150261 (04/14/15) File: AN60047.doc Figure 3 EVM Plot at Output Power of +12.29 dBm Page 2 of 3 Technical Note AN-60-047 LTE Performance vs. Output Power Model: GVA-82+ IMPORTANT NOTICE © 2015 Mini-Circuits This document is provided as an accommodation to Mini-Circuits customers in connection with Mini-Circuits parts only. In that regard, this document is for informational and guideline purposes only. Mini-Circuits assumes no responsibility for errors or omissions in this document or for any information contained herein. Mini-Circuits may change this document or the Mini-Circuits parts referenced herein (collectively, the “Materials”) from time to time, without notice. Mini-Circuits makes no commitment to update or correct any of the Materials, and Mini-Circuits shall have no responsibility whatsoever on account of any updates or corrections to the Materials or Mini-Circuits’ failure to do so. 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