ROHM IMH2A

EMH2 / UMH2N / IMH2A
Transistors
General purpose (dual digital transistors)
EMH2 / UMH2N / IMH2A
!External dimensions (Units : mm)
(3)
0.22
(4)
(5)
(6)
0.5 0.5
1.0
1.6
EMH2
(2)
1.2
1.6
(1)
0.5
0.13
!Features
1) Two DTC144Es chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
All terminals have same dimensions
Abbreviated symbol : H2
ROHM : EMT6
(1)
1.25
The following characteristics apply to both DTr1 and DTr2.
ROHM : UMT6
EIAJ : SC-88
IMH2A
1.3
0.9
All terminals have same dimensions
Abbreviated symbol : H2
(4) (5) (6)
R1 R2
(1)
(2)
(5)
0.3
(1)
R1=47kΩ
R2=47kΩ
(3)
R1=47kΩ
R2=47kΩ
R2 R1
(3) (2)
(4)
(6)
0.95 0.95
1.9
2.9
IMH2A
DTr1
DTr2
(6)
DTr1
R2 R1
(4) (5)
0to0.1
0.1Min.
(3) (2) (1)
R1 R 2
DTr2
0.7
0.15
2.1
!Equivalent circuit
EMH2 / UMH2N
2.0
(3)
(2)
(4)
(6)
(5)
0.2
0.65
UMH2N
0.65
!Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
1.6
Package
Type
0.3to0.6
0to0.1
!Packaging specifications
All terminals have same dimensions
Taping
Code
T2R
TN
T110
Basic ordering
unit (pieces)
8000
3000
3000
−
−
EMH2
UMH2N
−
IMH2A
−
−
−
ROHM : SMT6
EIAJ : SC-74
1.1
0.8
0.15
2.8
Abbreviated symbol : H2
EMH2 / UMH2N / IMH2A
Transistors
!Absolute maximum ratings (Ta = 25°C)
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
Parameter
IO
30
IC(Max.)
100
Output current
EMH2,UMH2N
Power
dissipation
40
V
−10
mA
150 (TOTAL)
Pd
IMH2A
∗1
mW
∗2
300 (TOTAL)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Input voltage
Output voltage
Typ.
Max.
Unit
Conditions
VI(off)
−
−
0.5
VI(on)
3
−
−
VO(on)
−
0.1
0.3
V
II
−
−
0.18
mA
IO(off)
−
−
0.5
µA
VCC=50V, VI=0V
GI
68
−
−
−
VO=5V, IO=5mA
Input current
Output current
Min.
DC current gain
VCC=5V, IO=100µA
V
VO=0.3V, IO=2mA
IO/II=10mA/0.5mA
VI=5V
Transition frequency
fT
−
250
−
MHZ
Input resistance
R1
32.9
47
61.1
kΩ
−
Resistance ratio
R2/R1
0.8
1
1.2
−
−
∗
VCE=10mA, IE=−5mA, f=100MHz
∗ Transition frequency of the device
!Electrical characteristic curves
10m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
20
10
5
Ta=−40°C
25°C
100°C
2
1
500m
Ta=100°C
25°C
1m
−40°C
500µ
200µ
100µ
50µ
20µ
10µ
2µ
1µ
5m 10m 20m
50m100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
200
100
Ta=100°C
25°C
−40°C
50
20
10
5
5µ
100m
100µ 200µ
2m
VO=5V
500
2m
200m
500µ 1m
1k
VCC=5V
5m
50
DC CURRENT GAIN : GI
100
2
0
0.5
1.0
1.5
2.0
2.5
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
3.0
1
100µ 200µ 500µ1m
2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
EMH2 / UMH2N / IMH2A
Transistors
1
lO/lI=20
OUTPUT VOLTAGE : VO(on) (V)
500m
200m
100m
Ta=100°C
25°C
−40°C
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ1m
2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current