UMA9N / FMA9A Transistors Digital transistor (Common Emitter Dual Transistors) UMA9N / FMA9N !Features 1) Two DTA114E chips in UMT and SMT packages. 2) Mounting cost and area can be cut in half. !External dimensions (Units : mm) UMA9N FMA9A 2.9±0.2 2.0±0.2 1.1 +0.2 −0.1 1.9±0.2 0.9±0.1 1.3±0.1 0.8±0.1 0.95 0.95 0.65 0.65 0.7 1.6 +0.2 −0.1 2.1±0.1 0.15±0.05 All terminals have same dimensions. All terminals have same dimensions. The following characteristics apply to both DTr1 and DTr2. ROHM : SMT5 EIAJ : SC-74A (2) R2 0.15 +0.1 −0.06 0.3 +0.1 −0.05 ROHM : UMT5 EIAJ : SC-88A (3) (1) R1 DTr1 R2 (4) (3) R1 DTr2 R2 (2) (5) R1 = 10kΩ R2 = 10kΩ Abbreviated symbol: A10 !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit VCC −50 V Supply voltage Input voltage VIN Output current Power dissipation * * −40 IO −50 IC (MAX.) −100 UMA9N V 10 mA 150 (TOTAL) Pd FMA9A mW 300 (TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg −50~+150 °C *1 *2 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.5 VI (on) −3.0 − − VO (on) − −0.1 −0.3 V II − − −0.88 mA VI = −5V Input voltage Output voltage Input current Unit V Conditions VCC = −5V, IO = −100µA VO = −0.3V, IO = −10mA IO/II = −10mA / −0.5mA IO (off) − − −0.5 µA VCC = −50V, VI = 0V DC current gain GI 30 − − − IO = −5mA, VO = −5V Transition frequency fT − 250 − MHz VCE = −10mA, IE = 5mA, f = 100MHZ Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − Output current * Transition frequency of the device 0~0.1 (1) (2) +0.1 −0.05 R1 DTr2 (5) 0.3~0.6 0.2 (4) 0~0.1 0.1Min. (5) (4) !Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type) 1.25±0.1 (3) (1) 2.8±0.2 (2) (3) * (4) R2 (5) R1 DTr1 (1) R1 = 10kΩ R2 = 10kΩ UMA9N / FMA9A Transistors !Packaging specifications Packaging type Taping Code Part No. Basic ordering unit (pieces) TR T148 3000 3000 UMA9N - FMA9A - !Electrical characteristic curves -10m VO = −0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) -20 -10 -5 Ta = −40°C 25°C 100°C -2 -1 -500m -200m -1m -500µ Ta = 100°C 25°C −40°C -200µ -100µ -50µ -20µ -10µ -5m -10m -20m -50m-100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) -1 lO/lI = 20 -500m Ta = 100°C 25°C −40°C -200m -100m -50m -20m -10m -5m -2m -1m -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 200 100 Ta = 100°C 25°C −40°C 50 20 10 5 -5µ 2 1 -1µ -2m VO = −5V 500 -2µ -100m -100µ -200µ -500µ -1m OUTPUT VOLTAGE : VO (on) (V) -2m 1k VCC = −5V -5m -50 DC CURRENT GAIN : GI -100 0 -0.5 -1 -1.5 -2 -2.5 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) -3 -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current