ESD/TLSD05J2U Low Capacitance TVS Diode Array FEATURES Protects two I/O lines and one Vcc line Low leakage current SOT-143 Low clamping voltage 5V operating voltage Response time < 1ns Solid-state silicon avalanche technology Device meets MSL 1 requirements RoHS compliant APPLICATIONS USB Power & Data Line Protection Ethernet 10BaseT I 2C Bus Protection Video Line Protection PACKAGE OUTLINEN T1/E1 secondary IC Side Protection Microcontroller Input Protection ISDN S/T Interface WAN/LAN Equipment ORDERING INFORMATION Package: SOT-143 Marking: SL3 Material: Halogen free Packing: Tape & Reel Quantity per reel: 3,000pcs PIN CONFIGURATION MACHANICAL DATA SOT-143 package Flammability Rating: UL 94V-0 Terminal: Matte tin plated. Packaging: Tape and Reel High temperature soldering guaranted:260℃/10s Reel size: 7 inch REV.2015 . 02.01 01 | www.spsemi.cn ESD/TLSD05J2U Low Capacitance TVS Diode Array ABSOLUTE MAXIMUM RATING Symbol Parameter Value Units PPP Peak Pulse Power (8/20μs) 125 W IPP Peak Pulse Current (8/20μs) 5 A ±15 ±8 kV VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) TOPT Operating Temperature -55/+150 °C TSTG Storage Temperature -55/+150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Symbol Parameter Test Condition VRWM Reverse Working Voltage Any I/O pin to GND VBR Reverse Breakdown Voltage IR Reverse Leakage Current IT = 1mA Any I/O pin to GND VRWM = 5V Any I/O pin to GND VF Diode Forward Voltage IF = 15mA VC1 Clamping Voltage 1 VC2 Clamping Voltage 2 IPP Peak Pulse Current CJ1 Junction Capacitance 1 CJ2 Junction Capacitance 2 Min Typ Max Units 5.0 V 6.0 V 1 μA 1.2 V IPP = 1A, tp = 8/20μs Any I/O pin to GND 15.5 V IPP = 5, tp = 8/20μs Any I/O pin to GND 25 V 5 A 0.6 1.0 pF 1.2 2.0 pF 0.85 tp = 8/20μs Any I/O pin to GND VR = 0V, f = 1MHz Between I/O pins VR = 0V, f = 1MHz Any I/O pin to GND Note: I/O pins are pin2,3. 10 110 100 90 80 70 60 50 40 30 20 10 0 Waveform Parameters: tr=8us td=20us Peak Pulse Power-PPK（KW) PP ELECTRICAL CHARACTERISTICS CURVE td=IPP/2 0 5 10 15 Time (us) Pulse Waveform REV.2015 . 02.01 20 25 30 1 0.1 0.01 0.1 1 10 100 1000 Pulse Duration-tp（us) Non-Repetitive Peak Pulse Power vs. Pulse Time 02 | www.spsemi.cn ESD/TLSD05J2U 110 100 90 80 70 60 50 40 30 20 10 0 2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Cj(VR)/Cj(VR=0V) % of Rated Power or Ipp Low Capacitance TVS Diode Array -25 0 25 50 75 100 125 -20 150 -15 -10 -5 0 5 Voltage-VR(v) Ambient Temperature-TA Junction Capacitance vs. Reverse Voltage Power Derating Curve SOT-143 PACKAGE OUTLINE DIMENSIONS D b1 b E L E1 d L1 e e1 Symbol A A1 A2 b b1 c D d E E1 e e1 L L1 REV.2015 . 02.01 Dimensions In Millimeters Min Max 0.90 1.15 0.00 0.10 0.90 1.05 0.30 0.50 0.75 0.90 0.08 0.15 2.80 3.00 0.20TYP 1.20 1.40 2.25 2.55 0.95TYP 1.80 2.00 0.55REF 0.30 0.50 0.250 A A2 A1 c SOT-143 Dimensions In Inches MIN MAX 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.030 0.035 0.003 0.006 0.110 0.118 0.008TYP 0.047 0.055 0.089 0.10 0.037TYP 0.071 0.079 0.022REF 0.012 0.020 03 | www.spsemi.cn