SSF3339
30V P-Channel MOSFET
Main Product Characteristics
D
VDSS
-30V
RDS(on)
37mΩ (typ.)
ID
-4.1A
G
S
①
SOT-23
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating: @TA=25℃
Symbol
unless otherwise specified
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-4.1 ①
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
-3.5 ①
IDM
Pulsed Drain Current ②
-20
PD @TC = 25°C
Power Dissipation ③
1.4
W
VDS
Drain-Source Voltage
-30
V
VGS
Gate-to-Source Voltage
± 20
V
-55 to +150
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characteristics
RθJA
Junction-to-ambient (t ≤ 10s) ④
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Page 1 of 7
Typ.
Max.
Units
—
90
°C /W
Rev.1.1
SSF3339
30V P-Channel MOSFET
Electrical Characteristics @TA=25℃
unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
-30
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
37
52
—
54
87
VGS(th)
Gate threshold voltage
-1
—
-3
—
-1.4
—
IDSS
Drain-to-Source leakage current
—
—
-1
—
—
-50
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
17
—
Qgs
Gate-to-Source charge
—
2.5
—
Qgd
Gate-to-Drain("Miller") charge
—
5.0
—
td(on)
Turn-on delay time
—
7.2
—
tr
Rise time
—
4.8
—
td(off)
Turn-Off delay time
—
24
—
tf
Fall time
—
11
—
Ciss
Input capacitance
—
665
—
Coss
Output capacitance
—
108
—
Crss
Reverse transfer capacitance
—
83
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = -250μA
VGS=-10V,ID = -4.1A
VGS=-4.5V,ID = -3A
VDS = VGS, ID = -250μA
TJ = 125°C
VDS = -24V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = -6A,
nC
VDS=-25V,
VGS = -10V
ns
VGS=-10V, VDS =-25V,
RGEN=3Ω，
VGS = 0V,
pF
VDS =-15V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
-4.1 ①
A
—
—
-20
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
-0.79
-1.0
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
9.7
—
ns
TJ = 25°C, IF =-6A,
Qrr
Reverse Recovery Charge
—
3.8
—
nC
di/dt = 100A/μs
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Page 2 of 7
Rev.1.1
SSF3339
30V P-Channel MOSFET
Test Circuits and Waveforms
EAS test circuit:
Switching time test circuit:
Gate charge test circuit:
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.1
SSF3339
30V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 4: Normalized On-Resistance Vs. Case
Case Temperature
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Temperature
Page 4 of 7
Rev.1.1
SSF3339
30V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance Junction-to-Case
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Page 5 of 7
Rev.1.1
SSF3339
30V P-Channel MOSFET
Mechanical Data
SOT-23 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
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Dimension In M illimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.95TYP
1.800
2.000
0.55REF
0.300
0.500
00
80
Page 6 of 7
Dimension In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037TYP
0.071
0.079
0.022REF
0.012
0.020
00
80
Rev.1.1
SSF3339
30V P-Channel MOSFET
Ordering and Marking Information
Device Marking: 3339
Package (Available)
SOT-23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tapes/Inner
Type
Tape Box
Units/Inner
Box
Inner
Units/Carton
Boxes/Carton Box
Box
SOT23
30000
4
3000
10
120000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Rev.1.1