Green Product STU/D04N20 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) ( Ω) Typ ID Rugged and reliable. 1.4 @ VGS=10V 200V TO-252 and TO-251 Package. 4A 1.6 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 4 A 3.3 A IDM TC=25°C TC=70°C a 11 A TC=25°C 50 W TC=70°C 35 W -55 to 175 °C Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W -Pulsed PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Oct,26,2012 1 www.samhop.com.tw STU/D04N20 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 200 IDSS Zero Gate Voltage Drain Current VDS=160V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance 1 Typ Max Units V 1 uA ±100 nA 1.8 2.5 V VGS=10V , ID=2A 1.4 1.8 ohm VGS=4.5V , ID=2A 1.6 2.0 ohm VDS=10V , ID=2A 7.5 S VDS=25V,VGS=0V f=1.0MHz 385 21 12 pF pF pF 8.3 ns 10 ns 20 ns 4.5 ns VDS=100V,ID=1A,VGS=10V 5.7 nC VDS=100V,ID=1A,VGS=4.5V 3 nC 0.9 nC 1.2 nC b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b VDD=100V ID=1A VGS=10V RGEN= 6 ohm VDS=100V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=0.5A 0.81 1.3 V Notes _ 300us, Duty Cycle < _ 2%. a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. Oct,26,2012 2 www.samhop.com.tw STU/D04N20 Ver 1.0 2.0 4 VGS=3.5V ID, Drain Current(A) ID, Drain Current(A) VGS=10V 3 2 VGS=3V 1 1.6 1.2 Tj=125 C 0.8 -55 C 25 C 0.4 VGS=2.5V 0 0 0 2 6 4 10 8 1.2 1.8 2.4 3.6 3.0 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.5 4.0 2.2 R DS(on), On-Resistance Normalized 4.8 2.4 V G S =4.5V 1.6 V G S =10V 0.8 V G S =10V I D =2A 1.9 1.6 V G S =4.5V I D =2A 1.3 1.0 0 0 0.1 2 1 3 4 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 25 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 0 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 0.6 VDS, Drain-to-Source Voltage(V) 3.2 RDS(on)( Ω) 0 12 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Oct,26,2012 3 www.samhop.com.tw STU/D04N20 Ver 1.0 20.0 3.0 I D =2A Is, Source-drain current(A) 3.5 125 C RDS(on)( Ω) 2.5 2.0 75 C 1.5 25 C 1.0 0 6 4 2 8 0.40 0.80 1.20 1.60 2.00 VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) Ciss 360 270 180 Coss Crss 0 0 VGS, Gate-to-Source Voltage(V) 450 90 25 C 75 C 10 540 C, Capacitance(pF) 125 C 5.0 1.0 0.5 0 10.0 5 10 15 25 20 10 VDS=100V ID=1A 8 6 4 2 0 30 0 1 2 3 4 5 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 6 I D, Drain Current(A) 100 Switching Time(ns) TD(off ) Tr 10 TD(on) Tf 1 10 RD S ( ) ON L im it 10 DC 1 1m s ms 0.1 VGS=10V Single Pulse TC=25 C VDS=100V,ID=1A VGS=10V 0.01 0.1 1 10 100 0.1 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Oct,26,2012 4 www.samhop.com.tw STU/D04N20 Ver 1.0 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 13. Normalized Thermal Transient Impedance Curve Oct,26,2012 5 www.samhop.com.tw STU/D04N20 Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Oct,26,2012 6 www.samhop.com.tw STU/D04N20 Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS INCHES MIN MAX 2.100 2.500 0.000 0.200 0.889 0.400 0.770 1.140 5.460 4.800 0.400 0.600 6.223 5.300 4.900 5.515 6.300 6.731 4.320 5.004 2.290 REF 8.900 10.400 1.780 1.397 2.743 REF. 0.508 REF. 0.890 1.700 1.100 0.500 10° 0° ° 15° 0 MIN MAX 0.083 0.098 0.008 0.000 0.035 0.016 0.030 0.045 0.189 0.215 0.024 0.016 0.245 0.209 0.193 0.217 0.265 0.248 0.170 0.197 0.090 BSC 0.350 0.409 0.055 0.070 0.108 REF. 0.020 REF. 0.035 0.067 0.020 0.043 10 ° 0° ° 15° 0 Oct,26,2012 7 www.samhop.com.tw STU/D04N20 Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Oct,26,2012 8 www.samhop.com.tw