Gr Pr STU/D435S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 17.5 @ VGS=10V -40V Suface Mount Package. -38A 27 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS TC=25°C Drain Current-Continuous TC=70°C a -Pulsed Sigle Pulse Avalanche Energy c Limit Units -40 V ±20 V A -38 -30.4 A -115 A 156 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 3 °C/W R JA 50 °C/W PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Jul,01,2011 1 www.samhop.com.tw STU/D435S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -40 Typ Max Units V uA 1 ±100 nA -1.7 -3 V 14 17.5 VGS=-4.5V , ID=-15A 20 27 m ohm m ohm VDS=-10V , ID=-19A 36 S VDS=-20V,VGS=0V f=1.0MHz 1950 229 186 pF pF pF 24 38 11 ns ns ns ns VDS=-32V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-19A -1 b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge b VDD=-20V ID=-1A VGS=-10V RGEN= 6 ohm VDS=-20V,ID=-19A,VGS=-10V VDS=-20V,ID=-19A,VGS=-4.5V VDS=-20V,ID=-19A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS= -4A Diode Forward Voltage VSD 8 42 nC 20 3.4 11 nC nC -0.78 nC -1.3 V Notes a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. _ subject to production _ testing. b.Guaranteed by design, not c.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13) Jul,01,2011 2 www.samhop.com.tw STU435S Ver 1.0 35 60 VGS = 10V VGS = 4.5V -55 C VGS = 4V 40 -I D, Drain Current(A) -I D, Drain Current(A) 50 VGS = 3.5V 30 VGS = 3V 20 10 0 Tj=125 C 28 21 14 7 25 C 0 1.0 0 2.0 3.0 0 Figure 1. Output Characteristics 30 1.4 R DS(on)( Ω) RDS(ON), On-Resistance Normalized 1.5 VGS = 4.5V 18 VGS = 10V 6 4.0 4.8 VGS=10V ID=19A 1.3 1.2 VGS=4.5V ID=15A 1.1 1.0 0 12 1 24 48 36 0.9 60 0 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage VDS = VGS ID = 250uA 75 Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 50 25 Tj( C) -ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 3.2 Figure 2. Transfer Characteristics 36 12 2.4 -VGS, Gate-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) 24 1.6 0.8 100 125 150 Tj, Junction Temperature ( C) 1.3 ID = 250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Jul,01,2011 3 www.samhop.com.tw STU435S Ver 1.0 20.0 60 -Is, Source-drain current (A) ID = 19A 50 RDS(on)( Ω) 40 30 125 C 75 C 20 25 C 10 0 4 2 0 8 6 10.0 5.0 125 C 75 C 1.0 0.2 10 -VGS, Gate-Sorce Voltage(V) 0.6 0.8 1.0 1.2 -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 2100 -VGS, Gate to Source Voltage (V) 2400 C, Capacitance (pF) 0.4 25 C Ciss 1800 1500 1200 900 600 Coss 300 VDS = 20V ID = 19A 8 6 4 2 Crss 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 40 45 35 VDS, Drain-to Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 50 300 100 ID, Drain Current (A) Switching Time(ns) 100 Tr TD(on) TD(off ) 10 Tf V DS =20V,I D =1A V GS =10V RD S ( ) ON L im it 10 1m 10 m DC s 10 0u s s VGS=-10V Single Pulse TA=25 C 1 0.3 1 1 10 100 0.1 Rg, Gate Resistance(Ω) 1 10 100 -VDS, Drain-Source Voltage (V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,01,2011 4 www.samhop.com.tw STU/D435S Ver 1.0 V ( BR )D S S tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R ӰJ A (t)=r (t) * R ӰJ A R ӰJ A =S ee Datas heet T J M-T A = P DM* R ӰJ A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,01,2011 5 www.samhop.com.tw STU/D435S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Jul,01,2011 6 www.samhop.com.tw STU/D435S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS INCHES MIN MAX 2.100 2.500 0.000 0.200 0.889 0.400 0.770 1.140 5.460 4.800 0.400 0.600 6.223 5.300 4.900 5.515 6.300 6.731 4.320 5.004 2.290 REF 8.900 10.400 1.780 1.397 2.743 REF. 0.508 REF. 0.890 1.700 1.100 0.500 ° 10° 0 15° 0° MIN MAX 0.083 0.098 0.008 0.000 0.035 0.016 0.030 0.045 0.189 0.215 0.024 0.016 0.245 0.209 0.193 0.217 0.265 0.248 0.170 0.197 0.090 BSC 0.350 0.409 0.055 0.070 0.108 REF. 0.020 REF. 0.035 0.067 0.020 0.043 10 ° 0° ° 15° 0 Jul,01,2011 7 www.samhop.com.tw STU/D435S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Jul,01,2011 8 www.samhop.com.tw