Gre r Pro STU/D624S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON). PRODUCT SUMMARY VDSS RDS(ON) (m ) Max ID 17.5 60V Rugged and reliable. @VGS=10V TO-252 and TO-251 Package. 35A 30 @VGS=4.5V G G D S STU SERIES TO-252AA(D-PAK) S STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS VGS ID IDM Limit Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 35 A 28 A 102 A 144 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W Drain Current-Continuous -Pulsed TC=25°C TC=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG a d Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Aug,01,2011 1 www.samhop.com.tw STU/D624S Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=48V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=17.5A Min Typ Max 60 2 Units V 2.4 14.0 1 uA ±100 nA 4 V 17.5 30.0 m ohm VGS=4.5V , ID=13.4A 22.5 VDS=10V , ID=17.5A 34 S 2260 142 115 pF pF pF VDD=30V ID=1A VGS=10V RGEN= 6 ohm 44 31 ns ns 70 ns 18 ns m ohm c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time VDS=25V,VGS=0V f=1.0MHz c tf Fall Time Qg Total Gate Charge VDS=30V,ID=17.5A,VGS=10V 32 nC Qgs Gate-Source Charge 4.5 nC Qgd Gate-Drain Charge VDS=30V,ID=17.5A, VGS=10V 10 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=5A 0.79 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Aug,01,2011 2 www.samhop.com.tw STU/D624S Ver 1.0 30 25 ID, Drain Current(A) ID, Drain Current(A) VGS=10V 20 VGS=4.5V 15 VGS=4V 10 5 VGS=3.5V Tj=125 C 18 12 25 C 0 2.0 1.5 1.0 0.5 2.5 0 3.0 0.9 1.8 2.7 3.6 4.5 5.4 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 42 2.0 28 RDS(on), On-Resistance Normalized 35 VGS=4.5V 21 14 VGS=10V 7 0 1.8 VGS=10V ID=17.5A 1.6 1.4 1.2 VGS=4.5V ID=13.4A 1.0 0 5 1 10 15 20 0 25 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage VDS=VGS ID=250uA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 50 75 100 125 150 Tj(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 1.2 25 Tj, Junction Temperature(°C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage -55 C 6 0 0 RDS(on)(m Ω ) 24 100 125 150 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 Tj, Junction Temperature(°C ) -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,01,2011 3 www.samhop.com.tw STU/D624S Ver 1.0 20 40 Is, Source-drain current(A) ID=17.5A RDS(on)(m Ω ) 35 30 125 C 25 20 75 C 15 25 C 0 125 C 10 5 75 C 25 C 1 0 4 2 6 0 10 8 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage VGS, Gate to Source Voltage(V) 2700 Ciss 2250 C, Capacitance(pF) 0.3 1800 1350 900 Coss 450 Crss 10 VDS=30V ID=17.5A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 10 5 15 20 30 25 35 40 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 100 ID, Drain Current(A) TD(off ) Switching Time(ns) 100 TD(on) Tr Tf 10 RD 10 1 10 ( 10 it 10 1m 10 m DC s 0u us s s 1 VGS=10V Single Pulse TA=25 C VDS=30V,ID=1A VGS=10V 1 S ON im )L 0.1 100 0.1 Rg, Gate Resistance( Ω ) 1 10 100 VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,01,2011 4 www.samhop.com.tw STU/D624S Ver 1.0 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. R JA(t)=r(t)* R JA 2. R JA=See Datasheet 3. TJM-TA=PDM*R JA(t) 4. Duty Cycle,D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Aug,01,2011 5 www.samhop.com.tw STU/D624S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 11.430 10.830 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.426 0.450 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Aug,01,2011 6 www.samhop.com.tw STU/D624S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Aug,01,2011 7 www.samhop.com.tw STU/D624S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Aug,01,2011 8 www.samhop.com.tw