SANGDEST MICROELECTRONICS 15SQ045 Technical Data Data Sheet N1007, Rev. B Green Products 15SQ045 SCHOTTKY BARRIER RECTIFIER Applications： z z z z DC-DC converters AC adapter High frequency rectification circuit Bypass diodes Features: z z z z z Super-high speed & low noise switching Low voltage drop This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches/ mm R-6 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 15SQ045 Technical Data Data Sheet N1007, Rev. B Green Products Marking Diagram: Where XXXXX is YYWWL 15SQ045 SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device 15SQ045 Package R-6 (Pb-Free) Shipping 500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 15SQ045 Technical Data Data Sheet N1007, Rev. B Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current Symbol VRRM IF(AV) Condition R-load, @Ta= 50°C IFSM 8.3 ms, half Sine pulse Max. 45 Units V 15 A 300 A Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VFM IRM1 IRM2 Thermal Resistance(Typical) Condition Max. 0.55 Units V Ta=25℃ 0.5 mA Ta=100℃ 25 IFM=15.0A,Ta=25℃ VRM=VRRM R θJ-c Between junction and case 3.0 R θJ-L Between junction and lead 2.0 ℃/W Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature at reduced reverse voltage at reduced reverse voltage in DC forward mode Symbol Condition Specification Units TJ VR≤80%VRRM VR≤50%VRRM -55 to +150 -55 to +180 -55 to +200 °C Max. Storage Temperature Tstg - -55 to +150 °C Approximate Weight wt - 2.24 g Case Style R-6 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 15SQ045 Technical Data Data Sheet N1007, Rev. B Green Products 100 TJ=125℃ 10 Reverse Current (MA) Junction Capacitance-CT(PF) 10000 TJ=25℃ 1000 100 0 5 10 15 20 25 30 35 1 0.1 TJ=25℃ 0.01 0.001 40 10 15 20 Reverse Voltage-VR(V) Fig.1-Typical Junction Capacitance Vs.Reverse Voltage Instantaneous Forward Current(A) 25 30 35 40 Fig.2-Typical Values Of Reverse Current VS.Reverse Voltage 100 10 TJ=25℃ 1 0.3 0.4 45 Reverse Voltage (%) 0.5 0.6 0.7 Forward Voltage Drop(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1007, Rev. B 15SQ045 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •