SANGDEST MICROELECTRONICS 8SQ045 Green Products Technical Data Data Sheet N0361, Rev. - 8SQ045 SCHOTTKY BARRIER RECTIFIER Applications： ： DC-DC converters AC adapter High frequency rectification circuit Bypass diodes Features: Super-high speed & low noise switching Low voltage drop This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches/ mm R-6 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 8SQ045 Green Products Technical Data Data Sheet N0361, Rev. - Marking Diagram: Where XXXXX is YYWWL 8 S Q 045 SSG YY WW L = Forward Current (8A) = Package Type = Device Type = Reverse Voltage (45V) = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package R-6 (Pb-Free) 8SQ045 Shipping 500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Symbol VRWM IF(AV) IFSM Condition 50% duty cycle @TL= 119°C, rectangular wave form Surge applied at rated load conditions half sine wave, 8.3ms Max. 45 Units V 8 A 200 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 8SQ045 Green Products Technical Data Data Sheet N0361, Rev. - Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) CT Condition @ 8 A, Pulse, TJ = 25 °C @ 8 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Max. 0.53 0.44 1.0 Units V V mA 60.0 mA 900 pF Thermal-Mechanical Specifications: Characteristics Junction Temperature -1 Storage Temperature Range Maximum Thermal Resistance, Case to Heat Sink Maximum Thermal Resistance, Junction to lead Case Style Symbol TJ Tstg Condition - Specification -55 to +150 -55 to +150 Units RθJA - 18 °C/W RθJL - 8 °C/W °C °C R-6 * This rating is limited to the use for bypass diodes and the condition where the reverse bias voltage is not applied. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 8SQ045 Green Products Technical Data Data Sheet N0361, Rev. - 100 TJ=125℃ 1000 Reverse Current (MA) Junction Capacitance-CT(PF) 10000 TJ=25℃ 100 10 1 0.1 TJ=25℃ 0.01 0.001 0 5 10 15 20 25 30 35 40 10 15 20 Reverse Voltage-VR(V) 30 35 40 Fig.2-Typical Values Of Reverse Current VS.Reverse Voltage 100 10 TJ=25℃ 1 0.3 45 Reverse Voltage (V) Fig.1-Typical Junction Capacitance Vs.Reverse Voltage Instantaneous Forward Current(A) 25 0.4 0.5 0.6 0.7 Forward Voltage Drop(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0361, Rev. - 8SQ045 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •