SANGDEST MICROELECTRONICS SBS5100 Technical Data Data Sheet N1559, Rev. - Applications: z z z z z z Green Products SBS5100 SCHOTTKY RECTIFIER Switching power supply Converters Free-Wheeling diodes Reverse battery protection Disk drives Battery charging Features: z z z z z z z z z Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability Low Power Loss, High Efficiency High Surge Current Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches Dim A B C D All DO-201AE Min Max Min Max 25.4 1.000 7.20 9.50 0.283 0.374 0.94 1.07 0.037 0.042 4.80 5.30 0.189 0.209 In mm In inch DO-201AE • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBS5100 Technical Data Data Sheet N1559, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL SBS 5 100 SSG YY WW L = Device Type = Forward Current (5A) = Reverse Voltage (100V) = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SBS5100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Maximum RMS Voltage VRMS 70 V IF(AV) 5.0 A IFSM 120 A VFM 0.85 0.70 V IRM 0.5 10 mA Cj 250 pF RθJA 25 K/W TJ ,TSTG -55 to +150 °C Average Rectified Output Current (Note 1) @TA = 105°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @IF = 5.0A,TA = 25°C @IF = 5.0A,TA = 125°C Peak Reverse Current At Rated DC Blocking Voltage @TA = 25°C @TA = 125°C Maximum Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient Storage Temperature Range Case Style DO-201AE Note:1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1MHz and applied reverse voltage of 5.0V D.C. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBS5100 Green Products 1000 100 Reverse Current-IR(MA) 1 TJ=25℃ TJ=125℃ 0.1 0.01 TJ=25℃ 0.001 0.0001 10 0 5 10 15 20 25 30 35 40 10 20 Reverse Voltage-VR(V) 30 40 50 60 70 80 90 100 Reverse Voltage-VR(V) Fig.1-Typical Junction Capacitance Vs.Reverse Fig.2-Typical Values Of Reverse Current Vs.Reverse Voltage Voltage Instantaneous Forward Current-IF(A) Junction Capacitance-CT(PF) Technical Data Data Sheet N1559, Rev. - 100 TJ=125℃ 10 TJ=25℃ 1 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage Drop-VF(V) Fig.3-Typical Forward Voltage Drop Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1559, Rev. - SBS5100 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •