63CPQ080 63CPQ100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0208, Rev. A Green Products 63CPQ080/63CPQ100 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • • 150 °C TJ operation Center tap TO-247AD package Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Green Products in Compliance with the RoHS Directive This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm SYMBOL A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P P1 P2 Q S T U MIN. 4.80 2.21 1.90 1.10 0.55 20.80 15.60 19.42 3.50 6.05 TYP. 5.00 2.41 2.00 1.20 2.00 3.00 0.60 21.00 16.55 1.20 15.80 13.30 5.00 2.50 5.44 19.92 4.13 3.60 2.50 5.80 6.15 10.00 6.20 MAX. 5.20 2.61 2.10 1.35 0.75 21.20 16.00 20.42 3.70 7.40 6.25 TO-247AD TO-247AD(HD) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 63CPQ080 63CPQ100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0208, Rev. A Green Products Marking Diagram: Where XXXXX is YYWWL 63 C PQ 80/100 SSG YY WW L 63CPQ080 = Forward Current (60A) = Configuration = Device Type = Reverse Voltage (80/100V) = SSG = Year = Week = Lot Number 63CPQ100 Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device 63CPQ080/100 Package Shipping TO-247AD (Pb-Free) 30pcs/ tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy(per leg) Repetitive Avalanche Current(per leg) Symbol VRWM Condition - IF(AV) 50% duty cycle @TC = 105°C, rectangular wave form IFSM 8.3 ms, half Sine pulse EAS IAR TJ=25℃,IAS=1A, L=30 mH Current decaying linearly to zero in 1 μ sec Frequency limited by TJ max. VA=1.5×VR typical Max. 80(63CPQ080) 100(63CPQ100) 60 Units V 492 A 15 mJ 1 A A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 63CPQ080 63CPQ100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0208, Rev. A Green Products Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Reverse Current (per leg) * Symbol VF1 VF2 IR1 IR2 Junction Capacitance (per leg) Typical Series Inductance (per leg) Voltage Rated of Change * CJ LS dv/dt Condition @ 30A, Pulse, TJ = 25 °C @ 30A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.80 0.75 0.3 Units V V mA 25.0 mA 1300 pF 7.5 nH 10,000 V/μs Specification -55 to +150 -55 to +150 0.8(per leg) Units °C °C Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Case (per leg) Maximum Thermal Resistance, Case to Heat Sink Approximate Weight Case Style Symbol TJ Tstg RθJC Condition DC operation 0.4(per device) RθCS wt Mounting surface, smooth and greased - °C/W 0.25 °C/W 6.7 g TO-247AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 63CPQ080 63CPQ100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0208, Rev. A Green Products TJ=25℃ 100 0 5 10 15 20 25 30 35 40 Instantaneous Reverse Current-IR(MA) 1000 10 1 TJ=125℃ 0.1 0.01 0.001 TJ=25℃ 0.0001 10 Reverse Voltage (V) 20 30 40 50 60 70 80 90 Percent of Rated Peak Reverse Voltage (%) Fig.2-Typical Reverse Characteristics Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) Junction Capacitance (PF) 10000 100 TJ=125℃ 10 TJ=25℃ 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0208, Rev. A 63CPQ080 63CPQ100 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •