MBR20200CT MBRB20200CT MBR20200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0763, Rev. - Green Products MBR20200CT/MBRB20200CT/MBR20200CT-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 175 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request MBR20200CT TO-220AB Case styles MBRB20200CT D2PAK Mechanical Dimensions: In Inches / mm MBR20200CT-1 TO-262 TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR20200CT MBRB20200CT MBR20200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0763, Rev. - Green Products Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 D2PAK Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 4.85 0.25 2.89 0.96 15.6 2.70 1.40 2.20 8° TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR20200CT MBRB20200CT MBR20200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0763, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR B 20 200 CT/CT-1 SSG YY WW L MBR20200CT = Device Type = Package type = Forward Current (20A) = Reverse Voltage (200V) = Configuration = SSG = Year = Week = Lot Number MBRB20200CT Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) D²PAK (Pb-Free) MBR20200CT MBRB20200CT Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Maximum RMS Voltage VRMS Max. Average Forward IF(AV) Peak Repetitive Surge current (Rated VR , Square Wave,20KHz) IRRM Max. Peak One Cycle Non-Repetitive Surge Current (per leg) IFSM Condition - 50% duty cycle @TC =125°C, rectangular wave form - 8.3 ms, half Sine pulse Max. 200 Units V 140 V 10(Per leg) 20(Per device) A 0.5 A 180 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR20200CT MBRB20200CT MBR20200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0763, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Max. Reverse Current (per leg)* Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * CT LS dv/dt Condition @ 10A, Pulse, TJ = 25 °C @ 10A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.90 0.80 1.00 Units V V mA 50 mA 500 pF 8.0 nH 10,000 V/μs Specification -55 to +175 -55 to +150 1.5 Units °C °C °C/W Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case (per leg) Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation TO-220AB/D2PAK/TO-262 2 g • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR20200CT MBRB20200CT MBR20200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0763, Rev. - Green Products Average Forward Current (A) Junction Capacitance (PF) 1000 TJ=25℃ 100 20 15 10 5 0 10 0 5 10 15 20 25 30 35 0 40 Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature°C Fig.1-Typical Junction Capacitance Instantaneous Reverse Current (μA) 25 Fig.2-Forward current derating curve 1000 100 TJ=125℃ 10 TJ=125℃ 1 TJ=25℃ TJ=25℃ 0.1 0.01 10 20 30 40 50 60 70 80 90 100 P ercent of R ated P eak R everse V oltage (% ) Fig.3-Typical Reverse Characteristics Fig.4-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0763, Rev. - MBR20200CT MBRB20200CT MBR20200CT-1 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •