MBR1060CT MBRB1060CT MBR1060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0031, Rev. - MBR1060CT /MBRB1060CT /MBR1060CT-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • 150 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability • • All SMC parts are traceable to the wafer lot Additional testing can be offered upon request • This is a Pb − Free Device MBR1060CT TO-220AB Case styles MBRB1060CT 2 D PAK MBR1060CT-1 TO-262 Mechanical Dimensions: In Inches / mm TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR1060CT MBRB1060CT MBR1060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0031, Rev. - Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 4.85 0.25 2.89 0.96 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 0.61 1.37 8.85 15.6 2.70 1.40 2.20 8° D2PAK TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR1060CT MBRB1060CT MBR1060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0031, Rev. - Marking Diagram: Where XXXXX is YYWWL MBR B 10 60 CT/CT-1 SSG YY WW L MBR1060CT = Device Type = Package type = Forward Current (10A) = Reverse Voltage (60) = Configuration = SSG = Year = Week = Lot Number MBRB1060CT Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) D²PAK (Pb-Free) MBR1060CT MBRB1060CT Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current Symbol VRWM Max. 60 Units V IF(AV) Condition 50% duty cycle @TC = 105°C, rectangular wave form 10 A IFSM 8.3 ms, half Sine pulse 125 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR1060CT MBRB1060CT MBR1060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0031, Rev. - Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Max. Reverse Current (per leg) * Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) Max. Voltage Rate of Change * CT dv/dt Condition @ 5A, Pulse, TJ = 25 °C Max. 0.70 Units V @ 5A, Pulse, TJ = 125 °C 0.65 V 1.0 mA @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz - 15 mA 220 pF 10,000 V/µs Specification -55 to +150 -55 to +150 Units °C °C Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance, Case to Heat Sink Approximate Weight Case Style Symbol TJ Tstg Condition - RθJC DC operation 2.0 °C/W RθJA DC operation 1.0 °C/W 2 g wt 2 TO-220AB/D PAK/TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR1060CT MBRB1060CT MBR1060CT-1 SANGDEST MICROELECTRONICS Green Products Junction Capacitance (PF) 10000 1000 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 40 Instantaneous Reverse Current (MA) Technical Data Data Sheet N0031, Rev. - 10 1 TJ=125℃ 0.1 0.01 0.0001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) TJ=25℃ 0.001 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0031, Rev. - MBR1060CT MBRB1060CT MBR1060CT-1 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •