MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
FEATURES
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.7 dB Insertion Loss
32 dB Isolation at 50 GHz
Low Current consumption
-10mA for low loss state
+10mA for Isolation state
M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible
Yellow areas indicate bond pads
DESCRIPTION
The MA4AGSW4 is an Aluminum-Gallium-Arsenide,
single pole, four throw (SP4T), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using M/A-COM Tech’s patented heterojunction technology. This technology produces a
switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode air
-bridges during handling and assembly. Off chip
bias circuitry is required.
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly components.
1
J3
J4
J2
J5
J1
Absolute Maximum Ratings @ TAMB = +25°C
Parameter
Maximum Rating
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Incident C.W. RF Power
+23dBm C.W.
Breakdown Voltage
25V
Bias Current
± 25mA
Assembly Temperature
+300°C < 10 sec
Junction Temperature
+175°C
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Electrical Specifications @ TA = 25°C, +/-10mA bias current
(On-wafer measurements)
RF SPECIFICATIONS
PARAMETER
FREQUENCY BAND
MIN
TYP
MAX
UNITS
0.05 - 18 GHz
0.7
0.8
dB
18 - 50 GHz
1.0
1.4
dB
INSERTION LOSS
0.05 - 18 GHz
25
41
dB
18 - 50 GHz
25
32
dB
0.05 - 18 GHz
10
21
dB
18 - 50 GHz
10
22
dB
0.05 - 18 GHz
10
26
dB
18 - 50 GHz
10
17
dB
20
nS
ISOLATION
INPUT RETURN LOSS
OUTPUT RETURN LOSS
SWITCHING SPEED
10 GHz
*Note:
Typical switching speed is measured from 10% to 90% of the detected RF voltage driven
by a TTL compatible driver. Driver output parallel RC network uses a capacitor between
390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Typical R.F. Performance (Probed on Wafer) @ +25°C
TYPICAL INSERTION LOSS @ -10 mA
0
IL ( dB )
-0.5
-1
-1.5
-2
0.00
10.00
20.00
30.00
40.00
50.00
40.00
50.00
FREQUENCY ( GHz )
J3 & J4
J2 & J5
ISOL ( dB )
TYPICAL ISOLATION @ +10 mA
0
-10
-20
-30
-40
-50
-60
-70
-80
0.00
10.00
20.00
30.00
FREQUENCY ( GHz )
J3 & J4
J2 & J5
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Typical RF Performance (Probed on wafer) @ +25°C
IRL ( dB )
TYPICAL INPUT RETURN LOSS @ -10 mA
0
-5
-10
-15
-20
-25
-30
-35
-40
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J3 & J4
J2 & J5
ORL ( dB )
TYPICAL OUTPUT RETURN LOSS @ -10 mA
0
-5
-10
-15
-20
-25
-30
-35
-40
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J3 & J4
J2 & J5
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Operation of the MA4AGSW4 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the
remaining isolated switching ports is required for the operation of the MA4AGSW4, AlGaAs, PIN switch. The
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port
J1. The forward bias voltage at J2, J3, J4 & J5 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply
current of ± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. While for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The
bias network design shown below should yield > 30 dB RF to DC Isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broadband, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information.
The lowest insertion loss, P1dB, IP3, and switching speed is achieved by using a voltage pull-up resistor in the DC
return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a
standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW4 Schematic with a Typical External 2-18 GHz Bias Network
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT)
J2
-10mA
+10mA
+10mA
+10mA
J3
+10mA
-10mA
+10mA
+10mA
J4
+10mA
+10mA
-10mA
+10mA
J5
+10mA
+10mA
+10mA
-10mA
CONDITION OF RF OUTPUT
J2-J1
Low Loss
Isolation
Isolation
Isolation
J3-J1
Isolation
Low Loss
Isolation
Isolation
J4-J1
Isolation
Isolation
Low Loss
Isolation
J5-J1
Isolation
Isolation
Isolation
Low Loss
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Chip Dimensions and Bonding Pad Locations (In Yellow)
mils
mm
DIM
A
B
C
D
Minimum
66.0
28.5
5.9
19.5
Nominal
67.0
29.0
6.0
20.0
Maximum
68.0
29.5
6.1
20.5
Minimum
1.676
0.724
1.499
0.495
Nominal
1.702
0.737
1.524
0.508
Maximum
1.727
0.749
1.549
0.521
E
29.5
30.0
30.5
0.749
0.762
0.775
F
G
H
PADS
8.5
39.5
3.5
3.5
9.0
40.0
4.0
4.0
9.5
40.5
4.5
4.5
0.216
0.229
0.241
1.003
0.089
0.089
1.016
0.102
0.102
1.029
0.114
0.114
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
ASSEMBLY INSTRUCTIONS
CLEANLINESS
These chips should be handled in a clean environment.
STATIC SENSITIVITY
These Devices are considered ESD Class 1A, HBM. Proper ESD techniques should be used when handling
these devices.
GENERAL HANDLING
The protective polymer coating on the active areas of the die provides scratch and impact protection,
particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with
vacuum pickup tools, or alternatively with plastic tweezers.
ASSEMBLY TECHNIQUES
The MA4AGSW4, AlGaAs device is designed to be mounted with electrically conductive silver epoxy or with a
low temperature solder perform, which does not have a rich tin content.
SOLDER DIE ATTACH
Only solders which do not scavenge gold, such as 80/20, Au/Sn or Indalloy #2 is recommended. Do not
expose die to temperatures greater than 300°C for more than 10 seconds.
ELECTRICAL CONDUCTIVE EPOXY DIE ATTACH
Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal
resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour.
RIBBON/WIRE BONDING
Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads.
A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the
lowest inductance and best microwave performance. For more detailed handling and assembly instructions,
see Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” at
www.macomtech.com.
Ordering Information
Part Number
Package
MA4AGSW4
Waffle Pack
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
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in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
8
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support