MA4PBL027 Rev. V3 HMIC Silicon Beam Lead PIN Diode Features • • • • • • • • • • Outline Drawing and Dimensions No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC Product < 0.10 ps High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5 V TTL PIN Diode Driver Description The MA4PBL027 is a silicon beam lead PIN diode fabricated with MACOM’s HMIC™ process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and air-bridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and also has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the diode junction and air-bridge during handling and assembly. The diodes exhibit low series resistance, low capacitance, and extremely fast switching speed. INCHES MM DIM MIN. MAX. MIN. MAX. A 0.033 0.035 0.838 0.889 B 0.0148 0.0164 0.376 0.416 C 0.004 0.006 0.1016 0.1524 D 0.0115 0.0135 0.2921 0.343 Applications E 0.0048 0.0065 0.1220 0.165 The ultra low capacitance, low RC product and low profile of the MA4PBL027 makes it an ideal choice for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The low bias levels of 10 mA in the low loss state and 0 V in the isolation state allows the use of a simple 5 V TTL gate driver. These diodes can be used as switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. F 0.0082 0.010 0.208 0.254 Ordering Information Part Number Package MA4PBL027 100 piece Gel Pack1 1. Parts packed circuit side down. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MA4PBL027 Rev. V3 HMIC Silicon Beam Lead PIN Diode Electrical Specifications at TA = +25°C Parameter Test Conditions Total Capacitance -10 V, 1 MHz -40 V, 1 MHz -10 V,100 MHz -40 V,100 MHz Series Resistance Units Min. Typ. Max. pF — 0.030 0.026 0.018 0.015 0.040 — — — 10 mA / 100 MHz 20 mA, 100 MHz 10 mA, 1 GHz Ω — 3.5 3.0 3.5 4.0 — — Forward Voltage 20 mA V 0.7 0.91 0.95 Leakage Current -90 V µA — — 1 Minority Carrier Lifetime IF = +10 mA, IR = 6 mA ns — 150 200 2. Total capacitance (CT) is equivalent to the sum of Junction Capacitance (CJ) and Parasitic Capacitance (CPAR). 3. Series resistance (RS) is equivalent to the total diode resistance: RS = Junction Resistance (RJ) + Ohmic Resistance (RC). Absolute Maximum Ratings4,5 Parameter Absolute Maximum Forward Current 100 mA Reverse Voltage 90 V Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Junction Temperature +175°C RF CW Incident Power 30 dBm CW RF & DC Dissipated Power 150 mW Mounting Temperature 235°C for 10 sec. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM class 1 devices. General Handling 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. A polymer layer provides scratch protection for the diode junction area and anode air bridge. However, the leads of beam lead devices are very fragile and must be handled with extreme care. The leads can easily be distorted or broken by the normal pressures if not careful while handling with tweezers. A vacuum pencil with a #27 tip is the preferred choice for picking and placing. Attachment These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive silver epoxy. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MA4PBL027 Rev. V3 HMIC Silicon Beam Lead PIN Diode C parasitic = 8 fF Rs Input Output Ls = 0.15 nH Cj MA4PBL027 SPICE Model NLPINM1 wBv= 90 V Is=1.0E-14 A wPmax= 150 mW Vi=0.0 V Ffe= 1.0 Un = 900 cm^2/V-sec M= 0.5 Wi= 14 um Fc= 0.5 Rr= 100 KΩ Imax= 1.1E+5 A/m^2 Cjmin= 0.030 pF Kf= 0.0 Tau= 110 nsec Af=1.0 Rs(I)= Rc + Rj(I) = 0.05 Ω Vj= 0.7 V Cj0= 0.040 pF 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MA4PBL027 HMIC Silicon Beam Lead PIN Diode Rev. V3 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. 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