v 1.1 04.08.2013 RLT760-10G Description RLT760-10G is a Laser Diode emitting at typical 760 nm with rated output power of 10 mW CW at room temperature. The 9 mm TO package includes a cap and flat window, and contains a built in monitor PD. Maximum Ratings Parameter Values Symbol Optical Output Power Min. Max. 10 PO Unit mW Operating Temperature TCASE -20 +60 °C Storage Temperature TSTG -40 +85 °C Soldering Temperature TSOLD 180 °C Specifications Parameter Symbol Central Wavelength λC Min. 755 Optical Output Power PO - Emitting Area WxH Values Typ. 760 Max. 765 10 - 3 x 1.5 Unit nm mW µm Threshold Current ITH 30 40 50 mA Forward Current IOP 150 200 250 mA Forward Voltage UOP 1.5 2.0 2.2 V Beam Divergence ӨII 8 10 12 deg. Beam Divergence Ө┴ 25 30 35 deg. Spectral Width (FWHM) Δλ 1.0 2.0 5.0 nm Δa II x - - < ±3 deg. ΔX, ΔY, ΔZ - - ±100 µm Static Alignment Positional Accuracy Mode Structure SM - Slope Efficiency η - 0.5 - mW/mA Monitor Current IM 0.07 0.4 0.8 mA www.roithner-laser.com 1 Electrical Connection Lead Description PIN 1 PD Cathode PIN 2 PD Anode, LD Cathode PIN 3 LD Anode Bottom View Drawing All dimensions in mm Mounting Instruction In order to maintain lifetime and stability of the laser diode it is essential to provide efficient heat management. Heat dissipation is possible through the base plate only. For long time stable operation proper contact between laser diode base plate and heat sink is mandatory. Safety Advice This laser module emits highly concentrated ultra violet light which can be hazardous to the human eye. This module is classified as Class 3B laser product according to IEC 60825-1 and 21 CFR Part 1040.10 Safety Standards. Actual laser light emitted and precautions necessary strongly depend on mode of operation. © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice www.roithner-laser.com 2