APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications. Maximum Ratings Parameter Symbol Values Unit Supply Voltage VPD Max. 0.95 x VBR Forward Current IF 1 mA Power Dissipation PE 1 mW Min. V Storage Temperature TSTG - 55 + 100 °C Operating Temperature TOP - 50 + 85 °C Characteristics (T CASE = 25°C) Parameter Symbol Min. 400 Values Typ. Max. 1100 Unit Spectral response range λ Peak sensivity wavelength λP 850 nm Photosensitive area Ø 500 µm Photosensitivity (λ=850nm,Φe=1µW, M=100) Re 0.55 A/W Response time (λ=800nm,f=1MHz,RL=50Ω) ts Dark current (M=100) ID Cutoff frequency fC 1000 MHz Terminal capacitance (M=100,f=1MHz) Ct 1.2 pF Optimum gain Breakdown voltage (IR=10 µA) Temp. coefficient of VBR (TOP=-40°C~85°C) www.roithner-laser.com 0.50 0.2 M VBR δ nm 0.6 1.5 ns 0.4 3 nA 60-80 100 220 0.9 V V/°C 1 Performance Characteristics Responsivity vs. Wavelength (0V) Gain vs. UR/UBR Dark Current vs. UR/UBR Capacitance vs. operating Voltage Application Circuit www.roithner-laser.com 2 Drawing All dimensions in mm ESD Caution Always do handle photodiodes with caution to prevent electrostatic discharge, the primary cause of unexpected semiconductor failure. ESD failures can be prevented by always wearing wrist straps, only using a grounded workplace, and following strict anti-static guidelines when handling the photodiode. © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice www.roithner-laser.com 3