SPD900-9P Lead ( Pb) f ree p rodu ct – R oH S c omp l ia nt Description SPD900-9P is a Si based PIN-Photodiode in hermetically sealed TO-39 STEM package. It features a 3.0x3.0mm² active area chip die offering excellent responsivity and high photocurrent. The TO39 housing comes with gold plated cap and flat glass lens, giving wide angle of acceptance of ±55° Maximum Ratings [Ta=25°C] Parameter Symbol Values Max. 170 Min. Unit Reverse Breakdown Voltage V(BR)R Operating Temperature TOPR - 25 + 100 °C Storage Temperature TSTG - 30 + 125 °C 240 °C TSOLDER Soldering Temperature Characteristics [T V CASE=25°C] Reverse Photo Current (VR=10V, L=1000Lx) IL Values Typ. 110 Reverse Dark Current (VR=10V) ID 5 VOC 350 mV λP 900 nm Half Angle of sensivity Ө1/2 ±50 deg. Total Capacitance (VR=10V, f=1Mhz) CT 25 pF Rise time (10%-90%) (VR=10V, RL=1kΩ) tr 300 ns Fall time (90%-10%) (VR=10V, RL=1kΩ) tf 600 ns Parameter Open Circuit Voltage (VR=10V, L=1000Lx) Symbol Spectral Responsivity (Peak) www.roithner-laser.com -1- Min. Max. 30 Unit µA nA 15/04/13 Performance Characteristics Relative Responsivity vs. Wavelength Drawing Dimensions in mm © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice www.roithner-laser.com -2- 15/04/13