PT511-2 TECHNICAL DATA TO-Can PIN Photodiode PT511-2 is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with flat glass lens. Absolute Maximum Ratings Item Symbol Value Unit Reverse Voltage UR 30 V Reverse current IR 1000 µA Forward current IF 5 mA Power Dissipation PD 100 mW Operating Temperature Topr -40 … +85 °C Storage Temperature Tstg -40 … +125 °C Soldering Temperature * Tsol 260 °C * must be completed within 10 seconds Specifications Item Wavelength Range Sensitive Area Unsaturated Power Responsivity Capacitance (-5 V) Dark Current (-5 V) Rise/Fall time Saturation Power Value 850 .. 1650 Ø 300 10 0.85 2 ≤1 3 >10 λ=1300 nm Drawing (mm) 15.11.2010 Unit nm µm dBm A/W pF nA ns dB Bottom View PT511-2 1 of 1