PT511-2

PT511-2
TECHNICAL DATA
TO-Can PIN Photodiode
PT511-2 is an InGaAs pin structure based photodiode on InP by MOCVD method and planar
diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with flat glass
lens.
Absolute Maximum Ratings
Item
Symbol
Value
Unit
Reverse Voltage
UR
30
V
Reverse current
IR
1000
µA
Forward current
IF
5
mA
Power Dissipation
PD
100
mW
Operating Temperature
Topr
-40 … +85
°C
Storage Temperature
Tstg
-40 … +125 °C
Soldering Temperature *
Tsol
260
°C
* must be completed within 10 seconds
Specifications
Item
Wavelength Range
Sensitive Area
Unsaturated Power
Responsivity
Capacitance (-5 V)
Dark Current (-5 V)
Rise/Fall time
Saturation Power
Value
850 .. 1650
Ø 300
10
0.85
2
≤1
3
>10
λ=1300 nm
Drawing (mm)
15.11.2010
Unit
nm
µm
dBm
A/W
pF
nA
ns
dB
Bottom View
PT511-2
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