GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode (Diode) Collector (Transistor) 5.9 5.5 0.6 0.4 4.0 3.4 Chip position feo06652 1.8 1.2 6.9 6.1 5.7 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Stimulierter Emitter mit sehr hohem ● Stimulated emitter with high efficiency ● Laser diode in diffuse package ● Suitable esp. for pulse operation at high ● ● ● ● Wirkungsgrad Laserdiode in diffusem Gehäuse Besonders geeignet für Impulsbetrieb bei hohen Strömen Hohe Zuverlässigkeit Gegurtet lieferbar current ● High reliability ● Available on tape and reel Anwendungen Applications ● Datenübertragung ● Fernsteuerungen ● „Messen, Steuern, Regeln“ ● Data transfer ● Remote controls ● For drive and control circuits Semiconductor Group 1 1998-09-18 SFH 495 P SFH 4552 Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 495 P Q62703-Q7891 5-mm-LED-Gehäuse (T 1 3/4), plan, schwarz eingefärbt, 2.54-mm-Raster, Kathodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 1 3/4), flat, black colored, spacing 2.54 mm, cathode marking: short lead. SFH 4552 Q62702-P5054 5-mm-LED-Gehäuse (T 1 3/4), plan, weiß diffus eingefärbt, 2.54-mm-Raster, Kathodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 1 3/4), flat, white diffuse colored, spacing 2.54 mm, cathode marking: short lead. Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Tstg Top – 40 ... + 85 0 ... + 85 °C Sperrspannung Reverse voltage VR 1 V Stoßstrom, tp = 200 µs, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 160 mW Wärmewiderstand Thermal resistance RthJA 450 K/W Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 200 mA, tp = 20 ms λpeak 940 nm Spektrale Bandbreite bei 50 % von Imax Spectral bandwidth at 50 % of Imax IF = 200 mA ∆λ 4 nm Semiconductor Group 2 Kennwerte (TA = 25 °C) Characteristics 1998-09-18 SFH 495 P SFH 4552 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Symbol Symbol Abstrahlwinkel Half angle SFH 495 P SFH 4552 ϕ Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 200 mA, RL = 50 Ω Switching times, Ie from 10 % to 90 % and from 90 % to10 %, IF = 200 mA, RL = 50 Ω tr, tf 7 ns Kapazität Capacitance VR = 0 V, f = 1 MHz Co 90 pF VF 2.1 V Schwellenstrom1) Threshold current 1) Ith < 150 mA Gesamtstrahlungsfluß Total radiant flux IF = 1 A, tp = 10 µs Φe 700 mW Strahlstärke Radiant intensity IF = 1 A, tp = 10 µs SFH 495 P SFH 4552 Ie Durchlaßspannung Forward voltage IF = 1 A, tp = 100 µs 1) Wert Value Einheit Unit Grad deg. ± 30 ± 50 mW/sr 400 200 Remark: This IRED works efficiently at forward currents higher than Ith. Warning: This data sheet refers to high power infrared emitting semiconductors. Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1. When operating powerful emitters, care should be taken to comply with IEC 825.1 to minimize any possible eye hazard: - Use lowest possible drive level - Use diffusing optics where possible - Avoid staring into powerful emitters or connected fibers Semiconductor Group 3 1998-09-18 SFH 495 P SFH 4552 Radiant intensity Ie = f (IF) Ιe Forward current IF = f (VF) OHF00328 160 % ΙF 140 OHF00329 2.0 A 1.8 1.6 120 1.4 100 1.2 1.0 80 0.8 60 0.6 40 0.4 20 0 0.2 0 0.4 0.8 1.2 0 1.4 1.6 A 2.0 ΙF 1.6 1.8 2.0 2.2 V 2.4 VF Radiation characteristics SFH 495 P Irel = f (ϕ) 40 30 20 10 0 OHF00330 1.0 ϕ 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation characteristics SFH 4552 Irel = f (ϕ) 40 30 20 10 ϕ 0 OHF00441 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 Semiconductor Group 0.4 0 20 40 60 80 4 100 120 1998-09-18